Untitled
Abstract: No abstract text available
Text: Central CCLHM080 THRU CCLHM150 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON CURRENT LIMITING DIODE FEATURES: • LOW COST • SUPERIOR LOT TO LOT CONSISTENCY • HIGH RELIABILITY • LEADED DEVICES AVAILABLE • SPECIAL SELECTIONS AVAILABLE MARKING CODE: SEE MARKING CODE
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CCLHM080
CCLHM150
OD-80
CCLHM080
22-August
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SOD-80 Marking Code
Abstract: diode SOD-80 Marking Code white yellow voltage regulator marking code diode SOD-80 Marking Code yellow yellow SOD-80 Marking Code blue SOD-80 Marking Code 3 CCLHM080 CCLHM100 CCLHM120 CCLHM150
Text: Central CCLHM080 THRU CCLHM150 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON CURRENT LIMITING DIODE FEATURES: • LOW COST • SUPERIOR LOT TO LOT CONSISTENCY • HIGH RELIABILITY • LEADED DEVICES AVAILABLE • SPECIAL SELECTIONS AVAILABLE MARKING CODE: SEE MARKING CODE
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CCLHM080
CCLHM150
OD-80
CCLHM080
22-August
SOD-80 Marking Code
diode SOD-80 Marking Code white yellow
voltage regulator marking code
diode SOD-80 Marking Code yellow yellow
SOD-80 Marking Code blue
SOD-80 Marking Code 3
CCLHM100
CCLHM120
CCLHM150
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marking code R5 sot23
Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Text: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE
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CBAS17
OT-23
100mA
marking code R5 sot23
R5 SOT
820 marking
MARKING CODE VF
CBAS17
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hsmp-3816
Abstract: HSMP-3816-TR1G
Text: Agilent HSMP-3816 Quad PIN Diode π Attenuator 300 kHz to 3 GHz in SOT 25 Package Data Sheet Package Marking and Pin connections 3 2 1 • 4 PIN Diodes in a SOT-25 package • 300 kHz to 3 GHz usable frequency band Description Agilent Technology’s HSMP3816 is a wideband, low
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HSMP-3816
OT-25
HSMP3816
HSMP-3816-BLKG
HSMP-3816-TR1G
HSMP-3816-TR2G
5989-4232EN
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Untitled
Abstract: No abstract text available
Text: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance.
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R5016ANX
O-220FM
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Untitled
Abstract: No abstract text available
Text: R5007FNX Nch 500V 7A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 1.3Ω ID ±7A PD 40W TO-220FM l Inner circuit l Features 1) Fast reverse recovery time (trr).
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R5007FNX
O-220FM
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Untitled
Abstract: No abstract text available
Text: R5007ANX Nch 500V 7A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 1.05Ω ID ±7A PD 40W TO-220FM l Inner circuit l Features 1) Low on-resistance.
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R5007ANX
O-220FM
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Untitled
Abstract: No abstract text available
Text: R5005CNX Nch 500V 5A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 1.6Ω ID ±5A PD 40W TO-220FM l Inner circuit l Features 1) Low on-resistance.
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R5005CNX
O-220FM
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Untitled
Abstract: No abstract text available
Text: R5016FNJ Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.325Ω ID ±16A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).
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R5016FNJ
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Untitled
Abstract: No abstract text available
Text: R5011FNJ Nch 500V 11A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.52Ω ID ±11A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).
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R5011FNJ
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Untitled
Abstract: No abstract text available
Text: R5009FNJ Nch 500V 9A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.84Ω ID ±9A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).
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R5009FNJ
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Untitled
Abstract: No abstract text available
Text: R5013ANX Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5013ANX
O-220FM
R1120A
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R5011ANX
Abstract: No abstract text available
Text: R5011ANX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.5W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5011ANX
O-220FM
R1120A
R5011ANX
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Untitled
Abstract: No abstract text available
Text: R5009ANX R5009ANX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009ANX
O-220FM
R1120A
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R5021ANJ
Abstract: No abstract text available
Text: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5021ANJ
SC-83)
R1120A
R5021ANJ
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Untitled
Abstract: No abstract text available
Text: R5009ANX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R5013ANJ Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 100W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5013ANJ
SC-83)
R1120A
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Untitled
Abstract: No abstract text available
Text: R5021ANX Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5021ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R5009FNX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009FNX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R5021ANX Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5021ANX
O-220FM
R1120A
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R5 SOT23
Abstract: No abstract text available
Text: Central CBAS17 Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE
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CBAS17
OT-23
100mA
CPD63
OT-23
R5 SOT23
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ERC01
Abstract: SV 04f
Text: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc
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ERC01
ERC01
SV 04f
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FAJ 40
Abstract: aba diode 15X15 SC017-2 SC017-4 T460 r930 Diode FAJ ABA SURFACE MOUNT T3B diode
Text: S C O I 7 1 .OA : Outline Drawings GENERAL USE RECTIFIER DIODE * Features • 04 it ' J ESD-Proof I 12*“ m Surface m ount device i/jv : Marking High reliability •Applications Be General purpose rectifier applications □ □ » A utom obile use t>'J —h'7-ÿ
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-TeilS19^
I95t/R89)
FAJ 40
aba diode
15X15
SC017-2
SC017-4
T460
r930
Diode FAJ
ABA SURFACE MOUNT
T3B diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage
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1SV306
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