DIODE MARKING U22 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1 A7 3000 Tape & Reel 1 1 ANODE 2 2 CATHODE 3 CAHODE/ANODE LBAV99LT1G A7 Pb-Free 3000 Tape & Reel

MARKING JS sot-23

Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

diode MARKING CODE jx

Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

Js MARKING CODE SOT23

Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

BAS19LT1G

Abstract: Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features • Pb−Free Packages are Available

Contextual Info: BB 640 Silicon Variable Capacitance Diode 2 • For Hyperband TV / VTR tuners, Bd I 1 VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 640 red S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage R ≥ 5kΩ

da221k

Abstract: DA228K DA228U DA204K DA204U DA221 SC-75A UMR12N marking R12 sot-363
Contextual Info: DA221 / DA204U / DA204K / DA228U / DA228K / UMR12N Diodes Switching diode DA221 / DA204U / DA204 DA228U / DA228K / UMR12N !External dimensions Units : mm DA221 DA204U / DA228U 1.6±0.2 1.0±0.1 0~0.1 0.15±0.05 0.2 0.7±0.1 0∼0.1 Marking 0.15±0.05 +0.1

marking R12 sot

Abstract: R12 SOT323 UMR12N DA228K DA228U DA204K DA204U DA221 SC-75A marking R12 sot-363
Contextual Info: DA221 / DA204U / DA204K / DA228U / DA228K / UMR12N Diodes Switching diode DA221 / DA204U / DA204K New DA228U / DA228K / UMR12N zExternal dimensions Units : mm DA221 DA204U / DA228U 1.6±0.2 1.0±0.1 0~0.1 0.15±0.05 0∼0.1 Marking 0.15±0.05 +0.1 0.3 −0

1N4148 75V 150mA Diodes

Abstract: 1N4148 75v 150mA diode 1n4148 1N4148 75V 150mA 500mW 1N4148 diode data sheet 1N4148.1N4448 1N4448
Contextual Info: 1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO−35 D Leads: Solderable per MIL−STD−202, Method 208 D Polarity: Cathode Band D Marking: Type Number

Contextual Info: BAT30F4 Small signal Schottky diodes Datasheet − production data Features • Very low conduction losses • Negligible switching losses • 0201 package • Low capacitance diode Description 0201 package Figure 1. Pin configuration and marking The BAT30 series uses 30 V Schottky barrier

Contextual Info: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

Contextual Info: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

GP 018 DIODE

Abstract: ba capacitance diode BA 582 marking Ja diode Q62702-A829
Contextual Info: Silicon RF Switching Diode ● BA 582 For low-loss VHF band switching in TV/VTR tuners Type Marking Ordering Code Pin Configuration Package1 BA 582 blue S Q62702-A829 SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 35 V Forward current, TA ≤ 60 ˚C

marking codes LXX 05

Abstract: SL05T1 SL05T1G SL05T3 SL15T1 SL15T1G SL15T3 SL24T1 SL24T1G SL24T3
Contextual Info: SL05T1 Series 300 Watt, SOT−23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

NXP SMD ZENER DIODE MARKING CODE

Abstract: 771-BZX100A115 Zener diode smd marking codes sod323
Contextual Info: BZX100A Single Zener diode Rev. 01 — 30 May 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diode in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power dissipation: ≤ 60 W

NXP SMD ZENER DIODE MARKING CODE

Abstract: Zener diode smd marking codes 1.2 data sheet zener diode mv 12 BZX100A Zener diode smd marking
Contextual Info: BZX100A Single Zener diode Rev. 01 — 30 May 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diode in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power dissipation: ≤ 60 W

ss129

Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
Contextual Info: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3

Contextual Info: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive

Contextual Info: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives

Contextual Info: MMBD1009 MMBD1011 Surface Mount Switching Diode P b Lead Pb -Free SWITCHING DIODE 100m AMPERES 75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr≤4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions

DIODE marking ED

Abstract: c3 marking ED marking code diode
Contextual Info: CM1244 4-Channel ESD Array in CSP Features • Four Channels of ESD Protection • ±15 kV ESD Protection on Each Channel IEC 61000−4−2 Level 4, Contact Discharge http://onsemi.com • ±30 kV ESD Protection on Each Channel (HBM) • Chip Scale Package Features Extremely Low Lead Inductance

Contextual Info: CM1244 4-Channel ESD Array in CSP Features • Four Channels of ESD Protection • ±15 kV ESD Protection on Each Channel IEC 61000−4−2 Level 4, Contact Discharge http://onsemi.com • ±30 kV ESD Protection on Each Channel (HBM) • Chip Scale Package Features Extremely Low Lead Inductance

Contextual Info: 3 Phase Bridge Diode Module OUTLINE S30VTA Unit : mm Weight : 30g typ. Package SVTA 800V 30A 36 23 ① 品名 Type No. ロット記号（例） Date code S30VTA60 90 • • • ＋ ④ ③ ② 36 ⑤ − Feature ① • 3 Phase-Bridge • Lead terminal • PCB-Mount available