DIODE MARKING YF Search Results

DIODE s3l

Abstract: S3L 15 diode DIODE s3l 15 3L60 3L60U DIODE s3l 65 S3L60U
Contextual Info: n - n x V'CX-Y- Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 600V 2.2A CD r7TU . 7-0 26.5±2 • h Unit • mm Package I AX14 <¡>4.4-0. 2 6 .5 « iîj ï l l d <> -N - •trr50ns •:-tSEPB*[ Marking S3L 05 •P F C nan£ Type No. •SRSÍÜ

S3LU

Abstract: S3L20 DIODE s3LU SHINDENGEN DIODE
Contextual Info: y*v\ U tlpe Super Past Recovery Diode =r— k Axial Diode OUTLINE DIMENSIONS S3L20U Case : t.4 ^ i 4.4 -n i 200V 3A •fiy-rx T }°- > © # trr3 5 n s ffl 'C o l o r c o d e fH c il) i* * & E P E iB M [2 l • s h s ;s Marking OA, mm •a « . s«, fa

ERC01

Abstract: SV 04f
Contextual Info: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc

RA83

Abstract: E130L ERA83-004 T151 T460
Contextual Info: ERA83-004 ia : Outline Drawings I '> a ^ + - / < iJ 7 r y - f * - K SCH O TTKY BARRIER DIODE I # « : Features »ifeV F : Marking Low V f S uper high speed switching. SfEnfe : Ö ••7\'— ►► ► ►► 4 0 1 High reliability by planer design. ►& 'J W

TPCF8A01

Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mÙ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

TPCF8B01

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

smd mosfet z8

Abstract: 2SJ360
Contextual Info: MOSFET SMD Type MOS Field Effect Transistors 2SJ360 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 VGS=-4V,ID=-1.0A 1 High forward transfer admittance :|Yfs|=0.9S(Typ.) A +0.1 0.53-0.1 Max.)(VDS=-60V) +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1

Contextual Info: TPD2E007 www.ti.com SLVS796E – SEPTEMBER 2008 – REVISED AUGUST 2010 2-CHANNEL ESD-PROTECTION ARRAY FOR AC-COUPLED/NEGATIVE-RAIL DATA INTERFACES Check for Samples: TPD2E007 FEATURES 1 • 2 • • • • • YFMG4 PACKAGE BOTTOM VIEW ESD Protection Exceeds IEC61000-4-2

2SJ315

Contextual Info: 2SJ315 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV 2SJ315 DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive Low Drain-Source ON Resistance : Rd S(ON)“ 0.250 (Typ.) High Forward Transfer Admittance : |Yfs| = 3.0S (Typ.)

S8210

Contextual Info: TOSHIBA TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-M O SIII TPCS8210 Lithium Ion Battery Applications Has a small footprint. Low drain-source ON resistance: RDS (ON) = 19 m£2 (typ.) High forward transfer admittance: | Yfs I = 9.2 S (typ.)

Contextual Info: TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt- M O S F DC-DC CONVERTER INDUSTRIAL APPLICATIONS 4-Volt Gate Drive Low Drain-Source ON Resistance : Rd S(ON) —0.25Î1 (Typ.) High Forward Transfer Admittance : |Yfs| = 3 .OS (Typ.)

TPCF8303

Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)

k312

Abstract: 2SK3126 transistor marking 75s
Contextual Info: T O S H IB A 2SK3126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 26 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 0.48 ü, (Typ.) High Forward Transfer Admittance: |Yfs| = 7.5S (Typ.)

2SJ315

Contextual Info: 2SJ315 TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR DC-DC CONVERTER SILICON P CHANNEL MOS TYPE L2-^-MOSlV INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.25 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 3.0 S (Typ.)

K3050

Abstract: TPCF8B01
Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

toshiba f5b

Abstract: TPCF8302 toshiba f5b data sheet
Contextual Info: TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8302 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 44 mÙ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.)

S8212

Abstract: S-8212 TPCS8212 ONM40
Contextual Info: TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8212 Lithium Ion Battery Applications Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)

TPCF8B01

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPCF8B01

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPC8001

Contextual Info: TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • • • • Low Drain-Source ON Resistance : Rd S (ON)= 15mO (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)

Contextual Info: TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOSlV 2SJ315 DC-DC CONVERTER INDUSTRIAL APPLICATIONS U n it in mm 4-Volt G ate Drive Low D rain-Souree ON R esistance : R d S(ON) —0 .2 5 0 (Typ.) H igh F orw ard T ransfer A dm ittance : |Yfs| = 3 .0 S (Typ.)

k2699

Abstract: Toshiba K2699 2SK2699 2sk2699 transistor toshiba marking code transistor SC-65
Contextual Info: 2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2699 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.)

2SK2699

Abstract: SC-65
Contextual Info: 2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2699 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.)