DIODE MARKING YG Search Results

MA411

Abstract: YG811S09R
Contextual Info: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na

Fuji Electric SM

Abstract: YG811S04
Contextual Info: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol

Fuji Electric SM

Contextual Info: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

Fuji Electric SM

Contextual Info: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

diode 10a 400v

Abstract: TO-220F15 CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 erb93 diode ERC91-02
Contextual Info: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER

power Diode 200V 10A

Abstract: Diode C91 02 c91 02 high power rectifier diode single 200v 30A schottky C91 diode "Power Diode" 200V 30A 30A, 600v RECTIFIER DIODE TO-220F15 diode 10a 400v
Contextual Info: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER

d 1667

Abstract: marking bbb2 S380D
Contextual Info: 17E D TELEFUNKEN ELECTRONIC ODD^flflS 1 • ALGG m S 380 D • S 381 D YGiyilHUIMtiM electronic Creative lechnôtogfes 1 Silicon Mesa Diode 01 -1 ST Application: Rectifier Features: • Glass passivated junction • Hermetically sealed package Dim ensions in mm

Contextual Info: DATE DRAWN FEB.-10-‘03 CHECKED FEB.-10-‘03 FEB.-10-‘03 Device Name ： Type Name ： YG972S6R Spec. No. ： MS5D1716 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,

Contextual Info: DAT E CHECKED Jun.-18-‘03 Jun.-18-‘03 Device Name ： Type Name ： YG805C10R Spec. No. ： MS5D1816 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any

yg123s15

Contextual Info: DATE DRAWN ’97-10-8 CHECKED ’97-10-8 Device Name ： Type Name ： YG123S15 Spec. No. ： MS5D0383 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any

yg865c15

Abstract: YG865C15R MS5D1776
Contextual Info: DATE CHECKED JUL.-28-‘03 JUL.-28-‘03 Device Name ： Type Name ： YG865C15R Spec. No. ： MS5D1776 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any

SD-46 Diode

Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

schottky diode 60V 5A

Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

d04 diode Marking s4

Abstract: YG805C04R jill20
Contextual Info: This material and the information herein t$ the property of Fuji Electric Co.Ltd. They shall be neither «produced, copiée lem. or disclosed in any way whatsoever lor the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.

FMB-24M

Contextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded

T3 SL 100B

Abstract: YG802C09R ful wave rectifier yg802c IC MARKING A60
Contextual Info: This material and he Information herein Is the property o* Fuji Electric Co .Ltd. They Shalt be neither («produced, copiée leni, or disclosed in any way whatsoever for the use ol any third p a rtid o r used for the manufacturing purposes w ith out the express written consent of Fuji Electric Co., Ltd.

yg805c

Contextual Info: This ma «rial and the information herein ts the property of Fuji Elecinc Co.Ltd. They shall be neither reproduced, copiée leni, or disclosed in any way w hatsoever for the use of a ny third pany.nor used for the manufacturing purposes w ithout the express writ ion consent of Fuji Electric Co. Ltd.

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

4580 SOIC-8

Abstract: MC33064
Contextual Info: MC34064, MC33064, NCV33064 Undervoltage Sensing Circuit The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection with a single external resistor. The MC34064 features a

Contextual Info: Product specification BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

Contextual Info: 60V High Current Low RDS ON N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 EKH06100  VDS - 60 V  ID - 100 A (EKH06100, SKH06100)  RDS(ON) - 3.8 mΩ typ.(VGS = 10 V, ID = 50 A)

MC33164

Abstract: MC33164-3 MC34164 MC34164-3 MC34164-5 NCV33164
Contextual Info: MC34164, MC33164, NCV33164 Micropower Undervoltage Sensing Circuits The MC34164 series are undervoltage sensing circuits specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is required. These devices offer

Fuji Electric SM

Contextual Info: This maiertaland he Information herein Is Ihe properly of Fuji Electric Co .Ltd. They shall be neither («produced, copiée tent, or disclosed in any way whatsoever for ihe use of any third partidor used for ihe manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.