DIODE MBR350 Search Results

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

B350

Abstract: B360 MBR350 MBR350RL MBR360 MBR360RL mbr360l
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

MBR360

Abstract: B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360

Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

MOTOROLA SEMICONDUCTOR B360

Abstract: MOTOROLA B360 MBR360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola
Contextual Info: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR350 MBR360 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

MBR360RLG

Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360RL

Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RLG
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

RECTIFIER DIODES Motorola

Abstract: mbr360 MOTOROLA B360 MBR330 motorola b330
Contextual Info: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

MBR360G

Abstract: MBR360RLG MBR350 MBR350RL MBR350RLG MBR360 MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

MBR360

Abstract: Diode MBR350
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

MBR360

Abstract: motorola b330
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

MBR360

Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA A x ia l L e a d R e c tifie r s MBR350 MBR360 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected