DIODE MDD 42 Search Results

2x520

Contextual Info: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions

Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol

312-22N1

Abstract: MDD312
Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol

527000

Abstract: MDD312
Contextual Info: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions

MDD312

Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1

M8x20

Abstract: 25518N I101S MDD255 ixys mcc ixys mcc 255
Contextual Info: MDD 255 High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 1 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine

MDD312

Contextual Info: High Power Diode Modules MDD312 IFRMS = 2 x 520 A FAVM = 2 x 320 A V RRM = 1200-1800 V Preliminary data v RSM v DSM VRRM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Type MDD 312-12io1 MDD 312-14io1 MDD 312-16io1 MDD 312-18io1 Maximum Ratings Test Conditions

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

MDD312

Abstract: 312-18N1
Contextual Info: ÖIXYS High Power Diode Modules MDD312 lFRMS = 2 x 520 A ^FAVM V RRM VRSM v VDSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol ^FRMS ^FAVM ^FSM Ji2dt 3 Type rrM _ » î MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 Test Conditions Maximum Ratings

MDD 500-22N1

Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●

E72873

Contextual Info: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;

ZY 180L

Abstract: ZY 20-12 diode zy MCC MDD IXYS
Contextual Info: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 2 MDD 175-28N1 MDD 175-34N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0

ixys mdd

Contextual Info: MDD 175 IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V High Power Diode Modules Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;

Contextual Info: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)

Contextual Info: High Power Diode Modules MDD 312 IFRMS = 2 x 520 A IFAVM = 2 x 320 A VRRM = 1200 - 1800 V Preliminary data VRSM VRRM VDSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0

312-22N1

Contextual Info: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)

mdd 42

Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
Contextual Info: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA

MDD 42-12-N1

Contextual Info: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms

MCD501

Abstract: MCD501-16io1 MDC501 MDC 1200 mcd501-12io1 501-18io1 MDC501-16io1 MCD501-18io1 mdk diode MCD501-16
Contextual Info: EXPANDED PRODUCT BRIEF Thyristor / Diode Modules Available in 8 configurations - Voltage grades 1200V-2600V Features and Benefits May 2009 Issue 3 • New bus bar design retaining standard connection footprint • Electrically isolated base plate Configurations

Contextual Info: DIXYS MDD310 IFRMS High Power Diode Modules ^ FAVM 2 x 480 A 2 x 305 A vRRM 800 -1600 V Type 800 1200 1400 1600 900 1300 1500 1700 Maximum Ratings A 480 A 305 Symbol Test Conditions Urms Uavm TVJ — Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 t = 10 ms 50 Hz , sine

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

6206a

Abstract: mcc501 MDK630
Contextual Info: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for

rct Thyristor

Contextual Info: SKKT 132, SKKH 132 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules MNLO MNNO= MDNO M YRR TARR TBRR TWRR M URR TCRR T¥RR T@RR PISM Q TAR S G*2 > TURV I5 Q UW XEH LZZI TAC[RU? LZZ$ TAC[RU? LZZI TAC[TC? LZZ$ TAC[TC? LZZI TAC[T¥? LZZ$ TAC[T¥?

Contextual Info: SKKT 162, SKKH 162 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules MNLO MNNO= MDNO M XRR TARR TBRR T¥RR M URR TCRR T[RR T@RR PISM Q T@R S G*2 >TURV I5 Q UA WEH LYYI T@CZRU? LYY$ T@CZRU? LYYI T@CZTC? LYY$ T@CZTC? LYYI T@CZT[? LYY$ T@CZT[?