DIODE NGD Search Results

Contextual Info: HL1541FG Laser Diode Description H L 1 5 4 1 F G is a 1.55 f i m In G aA sP distributedfeedback D F B laser diode with buried h e te ro ­ stru ctu re. It is su itab le as a light so u rce in high-bit-rate, lo ng-distance fiberoptic com m u n icatio n s and vari­

Contextual Info: HL1521AC Laser Diode Description HL1521 A C is a 1.55 im In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itab le as a light source in high-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s an d vari­ o u s o th e r types o f optical equipm ent.

2SC 1570

Abstract: EAM LD
Contextual Info: HL1521FG Laser Diode Description A H L 1 5 2 1 F G is a 1.55 /¿m In G a A sP laser diode with b u ried h e te ro stru c tu re . It is su itable as a light so u rce in h igh-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s and v ario u s o th e r types o f optical eq u ip m en t.

SC28L198

Abstract: SCC2691AC1A28 LCD 09151 CSOT109 PCA9552 PCK2002 PCF8591 APPLICATION pecl clock so8 PCA9550 PCA9553
Contextual Info: Interface Products Interface Products 67 I2C Logic Family Overview • Analog/Digital Converters It is frequency required to record analog information, such as temperature, pressure, battery level, signal strength, etc. The analog voltage information from the diode, pressure sensor,

Contextual Info: HL 1361 AC Under Development L a se r D io de Description H L 1 3 6 1 A C is a 1.3 ¿¿m In G aA sP distributedfeedback D F B laser diode w ith A/4 phase shifted. It is suitab le as a light source in high-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s

1322A

Abstract: 532 nm laser diode
Contextual Info: HL1322A Laser Diode Description H L 1322A is a high-pow er 1.3 /xm InG aA sP laser d io d e w ith do u b le h etero ju n ctio n stru ctu re. It is su itab le as a light source in high-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s an d vari­ o u s o th e r types o f optical eq u ip m en t. T he

8201N

Abstract: 20A400 Direct fuel injection ignition IGBT
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

8205N

Abstract: ignition IGBT
Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

G18N40B

Abstract: N40B ignition IGBT g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

ignition IGBT

Abstract: ngb15n41 aac marking NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

Contextual Info: NGD8201B Ignition IGBT, 20 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

8205NG

Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
Contextual Info: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and

8201N

Abstract: ignition coil IGBT
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and

8205N

Abstract: 8205 NGD8205N NGD8205NT4 0000001D
Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

G18N40B

Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

8201N

Abstract: NGD8201N NGD8201NT4
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

8201NG

Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

8201N

Abstract: NGD8201N NGD8201NT4
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

N40B

Abstract: G18N40B g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

8201NG

Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

NGD 8205NG

Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
Contextual Info: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

dpak 369C

Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and

8201N

Abstract: 20A400 NGD8201N NGD8201NT4
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses