DIODE OA 71 Search Results

c 10 ph diode

Abstract: C 15 PH diode f 9222 l GL710
Contextual Info: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER

c 10 ph diode

Abstract: GL710
Contextual Info: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER

SG10LC20USM

Abstract: fast recovery diode low voltage FT0220G
Contextual Info: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A

Contextual Info: i t f - K Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS D1NL40 Case : 0.6 / ¿2.6* 400V 0.9A =E= O ' •trr5 0 n s e -w T ! Cathode : Anode ^ Cathode band s K ^ E n a s fflia M arking •S R B S •7 'J -T ft-iJ L / L4 • S S . OA, S§B£

DBA100G

Abstract: DBA100 DBA100C
Contextual Info: Ordering num ber: EN 651D DBAIOO N0.651D Diffused Junction Silicon Diode SAVYO i 10.OA Single-Phase Bridge Rectifier F e a tu re s • Plastic molded structure • Glass passivation for high reliability •Peak reverse voltage : Vrm = 200, 600V • Average rectified c u rren t: I q = 10.0A

FAJ 40

Abstract: aba diode 15X15 SC017-2 SC017-4 T460 r930 Diode FAJ ABA SURFACE MOUNT T3B diode
Contextual Info: S C O I 7 1 .OA : Outline Drawings GENERAL USE RECTIFIER DIODE * Features • 04 it ' J ESD-Proof I 12*“ m Surface m ount device i/jv : Marking High reliability •Applications Be General purpose rectifier applications □ □ » A utom obile use t>'J —h'7-ÿ

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR D 0 Baef0 B ^ETrôCG®GadI®SÊ F Ê @ E ~ P nflT1b3 61C 00274 T-V/W/ H T 1IÏM 337 OA THRU 1N4372A D000274 SILICON ZENER DIODE 500mW, 2.4 THRU 3-0 VOLTS gdiBaioeG^oig-lBfleii’©^ e©E?p„ Central £@Bl?i!e©mgflUGt!Or C © 6 ’p.

Contextual Info: ESAE83-006 6 oa Y 7 ¥ < it - Y SCHOTTKY BARRIER DIODE : Features • ffivr Low Vp Super high speed switching. C o n n e c tio n D ia g ra m High reliability by planer design. A p p lic a tio n s High speed pow er switching. M a x im u m R atings and C ha ra cte ristics

IRF9521

Abstract: f9520 IRF9520 Samsung
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure

1N5806

Abstract: 5806 microsemi
Contextual Info: Microsemi Corp. j SANTA A N A . CA F o r m o re i n f o r m a ti o n call: 714 9 7 9 -8 2 2 0 1N5802 thru 1N5806 i<t¿ ^ — y The diode experts V ÏJ A N S Î FEATURES ULTRA FAST MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE

BUK426-1000A

Abstract: BUK426-1000B BUK426-100
Contextual Info: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION

SF10LC40

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE Package I FTO-220 SF10LC40 Unit :mm Weight 1.9« Typ 4.5 4 0 0 V 10 A Feature • ñS'fX • trr=50ns • 711^-10 K 2kV ( S II • • • • Low Noise tnr=50ns Full Molded Dielectric Strength 2kV Main Use •

F5LC40

Contextual Info: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II

c5411

Abstract: c5411 transistor S2000N equivalent 2SC5570 equivalent S2055N equivalent 2SD1555 equivalent c5411 equivalent S2055AF equivalent 2SD2539 equivalent 2SD2499 equivalent
Contextual Info: Horizontal-Deflection Output Transistors PRODUCT GUIDE Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density

D10SC4M

Contextual Info: Schottky Barrier Diode Twin Diode W tm D10SC4MR OUTLINE 40 V 10A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm Rating • Full Molded • 71 [ Æ - J U K Main Use • Switching Regulator • DC/DC Converter • D C /D C U V A ' - S 7

Contextual Info: DATA SHEET MOS Field Effect Power Transistors AiPA1 710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channei MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management

Contextual Info: Microsemi m m m Santa Ana, CA progr&BB Poweret/ Dy Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6792 1N6792R Features Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents

b12c3

Abstract: C22A AT84AS008 AT84AS008CGL AT84CS001 MC100EL16 RO4003 BDC 47 transistor D9B diode AT84XAS
Contextual Info: 10-bit 2.2 Gsps ADC Evaluation Board - AT84AS008-EB . User Guide Table of Contents Section 1 Overview . 1-1

Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance

BUK637-400B

Contextual Info: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable

SN74LS85

Abstract: SN74LS85D SN74LS85N on semiconductor diode b-14
Contextual Info: SN74LS85 4-Bit Magnitude Comparator The SN74LS85 is a 4-Bit Magnitude Camparator which compares two 4-bit words A, B , each word having four Parallel Inputs (A0 – A3, B0 – B3); A3, B3 being the most significant inputs. Operation is not restricted to binary codes, the device will work with any

Contextual Info: Q u a l it y S e m ic o n d u c t o r , I n c . High-Speed 3 .3 V C M O S 32-Bit Transceiver with Output Resistor QS74LCX4X2245 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • • • The LCX4X2245 is a 32-bit non-inverting transceiver

CURRENT12-3

Abstract: LAS2212 transistor 2206 LAS2205 2215 SERIES CAPACITORS 85-watt 2205 TRANSISTOR
Contextual Info: ALAMBDA LINEAR REGULATORS LAS 2200 SERIES 5 AMP, 85 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PAR AM ETER SYM BOL M A X IM U M U N ITS v ,N 40 Volts Input-Output Voltage Differential V,N-V0 37.5 Volts Input Voltage FEATURES • • •

Contextual Info: November 1990 Edition 3.0 FUJITSU DATA SHEET MB7117E/H/7118E/H/7117L/7118L PROGRAMMABLE SCHOTTKY2048 READ ONLY MEMORY SCHOTTKY 2048-BIT DEAP PROM 256 WORDS x 8 BITS The Fujitsu MB7117 and MB7118 are high speed schottky TTL electrically field programmable