DIODE OPTOCOUPLERS Search Results

6N135

Abstract: 6N136 E91231
Contextual Info: 6N135, 6N136 HIGH SPEED OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation between

6N138

Abstract: 6N139 E91231
Contextual Info: 6N138, 6N139 HIGH SPEED OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-darlington optocouplers use a light emitting diode and an integrated high gain photon detector to provide 2500Volts RMS electrical isolation

6N138

Abstract: 6N139 E91231
Contextual Info: 6N138, 6N139 HIGH SPEED OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-darlington optocouplers use a light emitting diode and an integrated high gain photon detector to provide 2500Volts RMS electrical isolation

TTL transfer switch diode

Abstract: 5V 50mA optically coupled isolator ICPL4502 E91231
Contextual Info: ICPL4502 HIGH SPEED, NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation between

E91231

Abstract: ICPL2531 ICPL2533
Contextual Info: ICPL2533 HIGH SPEED DUAL CHANNEL OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These dual channel diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation

ICPL2531

Abstract: E91231 ICPL2530
Contextual Info: ICPL2530, ICPL2531 HIGH SPEED DUAL CHANNEL OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These dual channel diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation

Contextual Info: CNG35 CNG36 JV GaAIAs OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed for low input current and long life operation. The application o f an IR emitting diode, based on a special GaAIAs intrinsic process results in a

HD H101

Abstract: CNG36 CNG35 SOT-90B SOT90B
Contextual Info: CNG35 CNG36 T O GaAIAs OPTOCOUPLERS O ptica lly coupled isolators consisting o f an infrared em itting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life operation. The application o f an IR em ittin g diode, based on a special GaAIAs intrinsic process results in a

Contextual Info: TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS 8003023 03437. MAY 199C * Gallium-Arsenide Diode Infrared Source

Contextual Info: TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A, TIL919B, TIL919C SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS030 - FEBRUARY 1992 • Gallium-Arsenide Diode Infrared Source

Contextual Info: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN

H11GX

Abstract: H11G1 datasheet H11G2 H11G1 H11G3
Contextual Info: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor

ST2122

Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
Contextual Info: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device

Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

C1679

Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
Contextual Info: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN

MOC8050M

Abstract: MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler
Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

MOC8050

Abstract: MOC8050M MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM
Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

C1775

Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
Contextual Info: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

Contextual Info: MOC215M, MOC216M, MOC217M Small Outline Surface Mount Phototransistor Optocouplers Features Description • U.L. recognized File #E90700, Volume 2 These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon

marking codes fairchild 61

Abstract: MOC211M MOC211VM MOC212M MOC213M
Contextual Info: MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output Features Description • These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small

MOC207-M

Abstract: MOC205M MOC205VM MOC206M MOC207M MOC208M Optocouplers 205
Contextual Info: MOC205M, MOC206M, MOC207M, MOC208M Small Outline Optocouplers Transistor Output Features Description • U.L. recognized File #E90700, Volume 2 These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon

Contextual Info: MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output Features Description • These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small

RT2700

Abstract: ST20E
Contextual Info: [ 5 Q MICROPROCESSOR COMPATIBLE CaAs SCHMITT TRIGGER OPTOCOUPLERS DPrCELECTISIIItS H11L1 H11L2H11L3 The H11L series has a mediunvtO'high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a

C1243

Abstract: C2090
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86