philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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Untitled
Abstract: No abstract text available
Text: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain
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VP2110
VP2110
DSFP-VP2110
A041309
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Untitled
Abstract: No abstract text available
Text: SP2T PIN Diode Switch MSW2022-202 Data Sheet Features • Wide Frequency Range: 50 MHz to 1 GHz • Surface Mount SP2T Switch in Compact Outline: 8 mm L x 5 mm W x 2.5 mm H • Higher Average Power Handling than Plastic Packaged MMIC Switches: 150 W CW •
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MSW2022â
MSW2022-202
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Untitled
Abstract: No abstract text available
Text: Surface Mount PIN Diode SP6T Switches MSW6000-600 Series Datasheet Features • Surface mount SP6T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H • Higher average power handling than plastic packaged switches 100 W CW • High voltage > 500 volts for RF peak power of 200 W
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MSW6000-600
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SP6T switch
Abstract: No abstract text available
Text: Surface Mount PIN Diode SP6T Switches MSW6000-600 Series Datasheet Features • Surface mount SP6T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H • Higher average power handling than plastic packaged switches 100 W CW • High voltage > 500 volts for RF peak power of 200 W
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MSW6000-600
SP6T switch
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transistor 13009-2
Abstract: BB 8615 FAH 19 33-Df 8928 9698 amd athlon PIN LAYOUT an 7591 integrated audio amplifier circuits 72284 LM60
Text: LM94 TruTherm Hardware Monitor with PI Loop Fan Control for Server Management 1.0 General Description The LM94 hardware monitor has a two wire digital interface compatible with SMBus 2.0. Using a ΣΔ ADC, the LM94 measures the temperature of four remote diode connected transistors as well as its own die and 16 power supply voltages.
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Semikron SKB 220
Abstract: semikron blocking diode 1200 V 250 A skb 33 02 skb 33 04 Semikron SKB 250/220 24A32 1V15M Semikron SKB b 80 semikron skb 33/08
Text: VRSM V VDRM VRRM V ID Tcase = 62 °C, full conduction 33 A 300 500 700 900 1100 1300 200 400 600 800 1000 1200 SKB 33/02 SKB 33/04 SKB 33/06 SKB 33/08 SKB 33/10 SKB 33/12 Symbol Conditions Tamb = 45 °C; ID SKB 33 SKB 33 isolated1) 2) chassis P1A/120 Tamb = 35 °C;P1A/120 F
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P1A/120
Nm/26
Semikron SKB 220
semikron blocking diode 1200 V 250 A
skb 33 02
skb 33 04
Semikron SKB 250/220
24A32
1V15M
Semikron SKB b 80
semikron skb 33/08
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semikron skb 33/08
Abstract: Semikron SKB 33/04 Semikron SKB b 80 single phase half controlled rectifier DIODE BRIDGE skb semikron skb 60 skb 33 04 semikron blocking diode 1200 V 250 A
Text: VRSM V VDRM VRRM V ID Tcase = 62 °C, full conduction 33 A 300 500 700 900 1100 1300 200 400 600 800 1000 1200 SKB 33/02 SKB 33/04 SKB 33/06 SKB 33/08 SKB 33/10 SKB 33/12 Symbol Conditions Tamb = 45 °C; isolated1) chassis2) P1A/120 Tamb = 35 °C;P1A/120 F
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P1A/120
P1A/120
Nm/44
Nm/26
semikron skb 33/08
Semikron SKB 33/04
Semikron SKB b 80
single phase half controlled rectifier
DIODE BRIDGE skb
semikron skb 60
skb 33 04
semikron blocking diode 1200 V 250 A
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VP2106
Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A
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VP2106
VP2110
O-236AB*
OT-23:
VP2106N3
-100V
VP2110K1
VP2110ND
OT-23.
VP2106
VP2106N3
VP2110
VP2110K1
VP2110ND
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VP2110
Abstract: VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND
Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — VP2106ND P1A❋ -100V 12Ω
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VP2106
VP2110
O-236AB*
OT-23:
VP2106N3
VP2106ND
-100V
VP2110K1
VP2110ND
OT-23.
VP2110
VP2110K1
VP2110ND
VP2106
VP2106N3
VP2106ND
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Untitled
Abstract: No abstract text available
Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A
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VP2106
VP2110
O-236AB*
OT-23:
VP2106N3
-100V
VP2110K1
VP2110ND
OT-23.
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b1128
Abstract: semikron skd SKD 31/16 semikron skd 31 semikron skd 31 semikron skd 50
Text: VRSM VRRM ID Tcase = 100 °C 31 A 200 V 400 V 800 V 1200 V 1400 V 1600 V SKD 31/02 SKD 31/04 SKD 31/08 SKD 31/12 SKD 31/14 SKD 31/16 Symbol Conditions 44 A Tamb = 45 °C, isolated 1) 5,3 A 2) chassis 17 A P5A/100 26 A R4A/120, P13A/125 P1A/120 IFSM 2 i t
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P5A/100
R4A/120,
P13A/125
P1A/120
P1A/120
C/125
Nm/18
B11-28
b1128
semikron skd SKD 31/16 semikron skd 31
semikron skd 31
semikron skd 50
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semikron skb 60
Abstract: semikron skd skb60 semikron skd 60/12 SKD100 Semikron SKB
Text: VRSM VRRM 60 A 88 °C 400 V 800 V 1200 V 1400 V 1600 V SKB 60/04 SKB 60/08 SKB 60/12 SKB 60/14 SKB 60/16 ID (Tcase = . °C) 60 A (102 °C) Symbol Conditions ID SKD 60/04 SKD 60/08 SKD 60/12 SKD 60/14 SKD 60/16 SKB60 67 92 110 A 20 21 24 A 25 27 28 A P1A/120
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SKB60
P13A/125
R4A/120
P1A/120
semikron skb 60
semikron skd
skb60
semikron skd 60/12
SKD100
Semikron SKB
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skB 28
Abstract: DIODE BRIDGE SKB semikron skb 30 SKD100 SKB60 semikron skd 100 semikron skd 60
Text: VRSM VRRM 60 A 88 °C 400 V 800 V 1200 V 1400 V 1600 V SKB 60/04 SKB 60/08 SKB 60/12 SKB 60/14 SKB 60/16 ID (Tcase = . °C) 60 A (102 °C) Symbol Conditions ID SKB60 67 92 110 A 20 21 24 A 25 27 28 P1A/120 P1A/200 F A 30 44 Tamb = 35 °C, P1A/120 F A 48
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SKB60
P13A/125
R4A/120
P1A/120
P1A/200
P1A/120
skB 28
DIODE BRIDGE SKB
semikron skb 30
SKD100
SKB60
semikron skd 100
semikron skd 60
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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018B
Abstract: LNJ808R83RA
Text: Checked Approved DEVELOPMENT SPECIFICATION T e n t â t ive P / N : L N J 8 0 8 R 83 R A T Y P A P P L E I C A T I ON M A T E R O U Orange Light Emitting Diode T L I I Indicators A L InGaAlP E Attached N A B S O L U T E M A X I M U M R A T I N G S C 0 N D I T I 0 N
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LNJ808R83RA
KB-H-022
KAC30GHIMA
K8-H-022-01
018B
LNJ808R83RA
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5342B
Abstract: 1n 4148 zener diode IN5956B diode IN 5342B IN 5342B Zener Diode 4148 zener T 4148 IN5913B in5388b IN5342B
Text: ZENER DIODES 1 WATT ZENER DIODE-PLASTIC O P E R A T IN G A N D S TO R A G E T E M P E R A T U R E - 6 5 ° C to + 1 75 °C IN 4 7 3 6 THRU IN 4 7 6 4 *E LE C T R IC A L C H A R A C T E R IS T IC S Ta = 2 5 °C u n le ss o th e rw ise n o te d V f = 1.2 V M ax,
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1N4736A
1N4749A
1N4750A
5342B
1n 4148 zener diode
IN5956B
diode IN 5342B
IN 5342B
Zener Diode 4148
zener T 4148
IN5913B
in5388b
IN5342B
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SOT23 marking GF
Abstract: xl sot-23 marking p1a sot-23 marking code SD SOT23 VP2110K1 P1A SOT23 SOT-23 Marking code p1A
Text: VP2110 ^ S u p e r t e x in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices ^D S O N b v tcs (max) -100V 12£i Product marking tor SOT-23: Order Number / Package If BVDSs ! -0.5A SOT-23 P1A* VP2110K1 where * = 2-week alpha date code
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VP2110
-100V
OT-23
VP2110K1
OT-23:
SOT23 marking GF
xl sot-23 marking
p1a sot-23
marking code SD SOT23
VP2110K1
P1A SOT23
SOT-23 Marking code p1A
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