DIODE PIV 800 50A Search Results

25A, 50V BRIDGE-RECTIFIER

Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE

500 watt half bridge schematic

Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING

500 watt half bridge schematic

Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE

rectifier diode with piv of 30v

Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING

1N6624U JANTXV

Abstract: "Ultra-Fast Recovery Rectifiers" 1N6629U JANTX JANTX 1N5811
Contextual Info: HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25 nsec ≤ trr ≤ 70 nsec TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAXIMUM REVERSE CURRENT @ PIV Volts Amps 55°C 100°C µAmps 25°C 100°C SRS160HE SRS180HE SRS1100HE 600 800

3 phase IGBT gate driver 1200

Abstract: SPM6G140-120D IGBT 50 amp 1200 volt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G150-060D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT 60A

Abstract: tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

IGBT DRIVER SCHEMATIC 3 PHASE

Abstract: Hall 221 hall current sensors IGBT 250 amp 3 phase IGBT gate driver 1200 tp 806 igbt desaturation driver schematic SPM6G250-120D IGBT 50 amp 1200 volt IGBT DRIVER SCHEMATIC
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G250-120D TECHNICAL DATA DATASHEET 4109, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

diode sy 160

Abstract: n 4113 SPM6G150-060D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT 60A

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IC 4098

Abstract: IGBT desaturation SPM6G080-060D 4098
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT DRIVER SCHEMATIC 3 PHASE

Abstract: 3 phase igbt driver schematic
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

ic 4099

Abstract: IGBT saturation fault 3 phase IGBT gate driver 3 phase IGBT gate driver 1200 4099 IGBT desaturation SPM6G080-120D 200 amp 120 V igbt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

LIN opto isolator

Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

LIN opto isolator

Abstract: SPM6G080-060D IC 4098
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G080-060D

Abstract: IC 4098 4098 Brake cleaner LIN opto isolator 210C
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G120-120D

Abstract: 210C 3 pins Variable resistor 5K ohm
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G140-060D

Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE