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    DIODE PJ 57 Search Results

    DIODE PJ 57 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE PJ 57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode pj 70

    Abstract: PJ 75 MM diode pj 70 diode DPG10P400PJ PJ diode diode pj IXYS DS 145 pj 35 diode
    Text: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF 60747and 20100212a diode pj 70 PJ 75 MM diode pj 70 diode DPG10P400PJ PJ diode diode pj IXYS DS 145 pj 35 diode

    DPG30P300PJ

    Abstract: diode pj 70 pj 35 diode diode pj pj 50 diode BY 255 diode
    Text: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF 60747and 20100126a DPG30P300PJ diode pj 70 pj 35 diode diode pj pj 50 diode BY 255 diode

    pj marking

    Abstract: diode pj 70 pj 35 diode diode pj pj-25 diode pj 80 PJ 039 Diode marking code PJ DPG30P300PJ
    Text: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF supplies200 60747and 20100126a pj marking diode pj 70 pj 35 diode diode pj pj-25 diode pj 80 PJ 039 Diode marking code PJ DPG30P300PJ

    pj 35 diode

    Abstract: DPG30P300PJ diode pj pj 50 diode PJ diode diode pj-039 IXYS DS 145 diode marking pj
    Text: DPG 30 P 300 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF O-273 60747and pj 35 diode DPG30P300PJ diode pj pj 50 diode PJ diode diode pj-039 IXYS DS 145 diode marking pj

    diode pj-039

    Abstract: pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode
    Text: DPG 10 P 400 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF O-273 60747and diode pj-039 pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode

    Untitled

    Abstract: No abstract text available
    Text: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current


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    PDF 60747and 20100212a

    DPG30P300PJ

    Abstract: No abstract text available
    Text: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current


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    PDF 60747and 20100126a DPG30P300PJ

    DLP-2232MSPF

    Abstract: 2232MSPF
    Text: DLP2232MSPF LEAD FREE USB / MICROCONTROLLER MODULE The DLP-2232MSPF combines the same USB interface used in the DLP-2232H and the DLP-1232H modules with a Texas Instruments microcontroller with internal FRAM to form a rapid development tool. The MSP430FR5739 microcontroller is preprogrammed with basic functionality for accessing the


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    PDF DLP2232MSPF DLP-2232MSPF DLP-2232H DLP-1232H MSP430FR5739 12-pin MSP-FET430UIF 16-bit 10-bit 2232MSPF

    CSR 8510

    Abstract: CSR 8510 hardware MDR771F CSR BLUECORE VIRTUAL MACHINE csr pskey AUTHENTICATION COPROCESSOR 2.0C CSR 8510 bluetooth BC31A223A CSR USB SPI converter csr schematic usb to spi
    Text: _äìÉ`çêÉ»PJ^ìÇáç=cä~ëÜ Device Features ! Fully Qualified Bluetooth system ! Bluetooth v.1 and v1.2 specification compliant ! Full-speed Bluetooth operation with piconet and scatternet support ! 6Mbit on-chip flash BC31A223A ! Low-power 1.8V operation


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    PDF BC31A223A BC31A223B 96-ball 15-bit BC31A223B BC31A223A-ds-001Pp CSR 8510 CSR 8510 hardware MDR771F CSR BLUECORE VIRTUAL MACHINE csr pskey AUTHENTICATION COPROCESSOR 2.0C CSR 8510 bluetooth BC31A223A CSR USB SPI converter csr schematic usb to spi

    CD1034

    Abstract: No abstract text available
    Text: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Volatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC


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    PDF MSP430FR573x MSP430FR572x SLAS639 16-Bit 24-MHz CD1034

    Untitled

    Abstract: No abstract text available
    Text: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Volatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC


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    PDF MSP430FR573x MSP430FR572x SLAS639 16-Bit 24-MHz

    SLAS639

    Abstract: SLAU272 DIODE PJ 57 PJ5 diode MSP430 SLAU278 MSP430FR5729IRHAT 29P1 MPY32 MSP430FR5728IRGET
    Text: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Volatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC


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    PDF MSP430FR573x MSP430FR572x SLAS639 16-Bit 24-MHz SLAS639 SLAU272 DIODE PJ 57 PJ5 diode MSP430 SLAU278 MSP430FR5729IRHAT 29P1 MPY32 MSP430FR5728IRGET

    ADC10B

    Abstract: 6P15
    Text: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Volatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC


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    PDF MSP430FR573x MSP430FR572x SLAS639 16-Bit 24-MHz ADC10B 6P15

    SLAS639

    Abstract: UART CC 2500 ADC10IV MSP430FR5729IDA pj 75 sx 34 MSP430 boot loader code serial port msp430 MSP430FR5739 00197F MSP430FR5738
    Text: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Vollatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC


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    PDF MSP430FR573x MSP430FR572x SLAS639 16-Bit 24-MHz SLAS639 UART CC 2500 ADC10IV MSP430FR5729IDA pj 75 sx 34 MSP430 boot loader code serial port msp430 MSP430FR5739 00197F MSP430FR5738

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 302GB066HD Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 3 ,5   SEMiX 2 Trench IGBT Modules SEMiX 302GB066HD Target Data Features                           Typical Applications


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    PDF 302GB066HD

    302GAL

    Abstract: No abstract text available
    Text: SEMiX 302GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 3 ,5     SEMiX 2s   ' 5       %   '( 7- )5 ,  &(- )   '( 7- )5 ,  &9( )   &  Values Units 0-40- '(- 4:- 4- 0-; '< =- >>> ? &9( &'(


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    PDF 302GB066HDs 302GB066HDs 302GAL066HDs 302GAR066HDs 302GAL

    DIODE 3J

    Abstract: No abstract text available
    Text: SEMiX 302GB066HD Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 3 ,5   SEMiX 2 Trench IGBT Modules SEMiX 302GB066HD Target Data Features                           Typical Applications


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    PDF 302GB066HD DIODE 3J

    202GB

    Abstract: No abstract text available
    Text: SEMiX 202GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  0 056 7 "9.     SEMiX 2s SPT IGBT Modules SEMiX 202GB128Ds Preliminary Data Features                  ! "  !    


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    PDF 202GB128Ds 202GB

    f6 5e diode

    Abstract: No abstract text available
    Text: SEMiX 202GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  0 056 7 "9.     SEMiX 2s SPT IGBT Modules SEMiX 202GB128Ds Preliminary Data Features                  ! "  !    


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    PDF 202GB128Ds f6 5e diode

    202GB128D

    Abstract: No abstract text available
    Text: SEMiX 202GB128D Absolute Maximum Ratings Symbol Conditions IGBT  0 056 7 "9.     SEMiX 2 SPT IGBT Modules SEMiX 202GB128D Preliminary Data Features                  ! "  !    


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    PDF 202GB128D SEMI28D 202GB128D

    MQE001

    Abstract: MQE043-964A VCO MQE001 PJ 1399 diode MQE520 MQE001-1016 MQE0 MQC500 836 DIODE MOE001
    Text: MICROWAVE PRODUCTS FOR COMMUNICATION EQUIPMENT PJ •For Mobile Communication Equipment System PDC1.5GHZ S'- PHS W-LAN LMS36C DIODE S W IT C H E S Frequency Range fo (MHz) Tx 902.5±12.5 LMS36C0902M045 Rx 947.5±12.5 Tx 1441,0 ± 12.0 LMS36C1441M048 Rx 1489.0±12.0


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    PDF LMS36C LMS36C0902M045 LMS36C1441M048 LMS36C1907MOOO LMS36C2450M000 mLMS36L LMS36L3 MQE744- MQE001- MQEOOO/700 MQE001 MQE043-964A VCO MQE001 PJ 1399 diode MQE520 MQE001-1016 MQE0 MQC500 836 DIODE MOE001

    MV1100

    Abstract: No abstract text available
    Text: TH 7868B AREA ARRAY CCD IMAGE SENSOR 576 x 768 PIXELS WITH ANTIBLOOMING *2 L F VSS VGS V0H vOS1 VSS *1 P *3 P *4 P ♦ * 12*1 1231 ,24| 1211 I2QI 1191 Mel 1171 lig i 1151 IU I 1131 MAM FEATU RES • Fully compatible with CCIR TV standard. 3 ■ 2/3* optics compatible image format 11 mm diagonal .


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    PDF 7868B DSTH7B68BT/0995 MV1100

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


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    PDF O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89

    7868A

    Abstract: No abstract text available
    Text: T H O M S O N MIL ET S P A T I A U X EIE D • T02bô?2 0DG03Sb 3 ■ O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX “f - M-i- JH X 7868A AREA ARRAY CCD IMAGE SENSOR 576x768 PIXELS WITH ANTI BLOOMING e x : T H X 31162 ■ Fully compatible with CCIR TV standard.


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    PDF 0DG03Sb 576x768 7868A