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    DIODE R 107 Search Results

    DIODE R 107 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE R 107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FP15R12KE3

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


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    PDF FP15R12KE3 FP15R12KE3

    FP15R12KE3

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


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    PDF FP15R12KE3 FP15R12KE3

    FP15R12KE3

    Abstract: FP15R12KE3 datasheet
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


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    PDF FP15R12KE3 FP15R12KE3 FP15R12KE3 datasheet

    FP15R12KE3

    Abstract: FP15R12KE3 datasheet
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


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    PDF FP15R12KE3 FP15R12KE3 FP15R12KE3 datasheet

    BMU10-940-02-R

    Abstract: BMU10-975-02-R BMU10-915-02-R 10w laser diode 960nM 975nm 915nm bookham diode
    Text: Data Sheet 10W 9xxnm Uncooled Multimode Laser Diode Module BMU10-9xx-02-R The Bookham BMU10-9xx-02-R multimode laser diode module series has been designed to provide the high power and reliability required for pumping next generation solid-state and fiber lasers, and for direct applications. The module includes a


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    PDF BMU10-9xx-02-R BMU10-9xx-02-R 60825-Edition 1070nm 21CFR BH13933 BMU10-940-02-R BMU10-975-02-R BMU10-915-02-R 10w laser diode 960nM 975nm 915nm bookham diode

    BMU8-915-01-R

    Abstract: BMU8 BMU8-940-02-R BMU8-915-02-R 975nm 960nM bookham diode laser diode fiber coupled
    Text: Data Sheet 8W 9xxnm Uncooled Multimode Laser Diode Module BMU8-9xx-01/02-R The Bookham BMU8-9xx-01/02-R multimode laser diode module series has been designed to provide the high power and reliability required for pumping next generation solid-state and fiber lasers, and for direct applications. The module


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    PDF BMU8-9xx-01/02-R BMU8-9xx-01/02-R 60825-Edition 1070nm 21CFR BH13888 BMU8-915-01-R BMU8 BMU8-940-02-R BMU8-915-02-R 975nm 960nM bookham diode laser diode fiber coupled

    BMU6-975-01

    Abstract: BMU7-915-01-R BMU6-975-02-R
    Text: Data Sheet 7W/6W 9xxnm Uncooled Multimode Laser Diode Module BMU7-9xx-01/02-R The Bookham BMU7-9xx-01/02-R multimode laser diode module series has been designed to provide the high power and reliability required for pumping next generation solid-state and fiber lasers, and for direct applications. The module


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    PDF BMU7-9xx-01/02-R BMU7-9xx-01/02-R 1070nm 60825-Edition 21CFR BH13932 BMU6-975-01 BMU7-915-01-R BMU6-975-02-R

    Untitled

    Abstract: No abstract text available
    Text: MA4P506-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.3 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.1.0p Carrier Lifetime (S)3.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)


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    PDF MA4P506-1072

    Untitled

    Abstract: No abstract text available
    Text: MA4P504-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.6 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.0.5p Carrier Lifetime (S)1.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)


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    PDF MA4P504-1072

    Untitled

    Abstract: No abstract text available
    Text: MA4P505-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.45 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.0.6p Carrier Lifetime (S)2.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)


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    PDF MA4P505-1072

    MONOLITHIC DIODE matrices

    Abstract: HM1-051 diode matrix hm1 Diode S4 55a HM9-050 harris diode HM9-081 diode matrix diode matrix harris HM-030
    Text: CIE1 HM-010/030/040/050/ 074/080/090 HARRIS SEM IC O N D U C TO R A D IV ISIO N O F H A R R IS C O R P O R A T IO N MIL Temperature Diode Matrices Harris M o n olithic Diode Matrices consist o f arrays o f passivated silicon diodes, fabricated in dielectrically


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    PDF HM-010/030/040/050/ Me-18 MONOLITHIC DIODE matrices HM1-051 diode matrix hm1 Diode S4 55a HM9-050 harris diode HM9-081 diode matrix diode matrix harris HM-030

    25-12io8

    Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
    Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor


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    PDF K21-0120 K21-01S0 K21-0180 K21-0265 K41-0150C 25-12io8 MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873

    Untitled

    Abstract: No abstract text available
    Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor


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    a 1201 sanyo

    Abstract: TIC 2060 tic 1068 A 3202 DIODE um 3567 diode e 2060 TIC 2060 D
    Text: Ordering number : EN698C I SArnYO SVC202,202SPA No.6980 Diffused Junction Type Silicon Diode i Varactor Diode IOCAP for FM Receiver Electronic Tuning F e a tu r e s • Twin type FM electronic tuning-use varactor diode which excels in large input characteristics.


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    PDF EN698C SVC202 202SPA a 1201 sanyo TIC 2060 tic 1068 A 3202 DIODE um 3567 diode e 2060 TIC 2060 D

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


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    PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    D1109

    Abstract: D1103 6 PIN TRANSISTORS 566
    Text: SURFACE MOUNT DIODE ARRAYS MMAD130 MMAD1103 These diode arrays are m ultiple diode junctions fabricated by a planar pro­ cess and m ounted in integrated circuit packages fo r use in high-current, fast-sw itching core-driver applications. These arrays offer many o f the


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    varactor diode notes

    Abstract: varactor diode high frequency x band varactor diode "Varactor Diode" CAY10 Parametric Varactor diodes
    Text: GALLIUM ARSENIDE VARACTOR DIODE 125 150 Tstud CO CAYIO TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE ffr. tm r e ì CAYIO Page C I GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in


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    PDF CAY10 varactor diode notes varactor diode high frequency x band varactor diode "Varactor Diode" Parametric Varactor diodes

    ica 700 Y

    Abstract: Diode LT 228 LL4735A
    Text: Central CLL4729A THRU CLL4764A Sem iconductor Corp. 1.0W ZENER DIODE 5% TOLERANCE DESCRIPTIO N: The C EN T R A L SE M IC O N D U C T O R CLL4729A Series Silicon Zener Diode is a high quality voltage regulator for use in surface mount industrial, commercial, entertainment and computer


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    PDF CLL4729A CLL4764A LL4732A LL4733A LL4735A LL4736A LL4737A LL4738A LL4739A ica 700 Y Diode LT 228

    Rf Detectors

    Abstract: tSA401 BA481 noise diode mixer diode KMW450 BB533
    Text: N AMER PHILIPS/DISCRETE b*ÌE D m b b S 3 T31 DDEblb? 07 S BiAPX BA4Ö 1 A U.H.F. MIXER DIODE S ilico n epitaxial S c h o ttk y -b a rrie r diode in a DO -34 envelope and intended fo r m ixe r applica tio n s in u .h .f. tuners, t.v. m odulators and r.f. detectors.


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    PDF tSA401 DO-34 OD-68 DO-34) 7Z83041 BA481 Rf Detectors tSA401 noise diode mixer diode KMW450 BB533

    melf diode marking code

    Abstract: No abstract text available
    Text: Central" CLL4728A THRU CLL4764A Semiconductor Corp. SURFACE MOUNT 1.0W SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R CLL4728A Series Silicon Zener Diode is a high quality volt­ age regulator for use in surface mount industrial,


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    PDF CLL4728A CLL4764A 17-July melf diode marking code

    d3s6m

    Abstract: RFE-200
    Text: — / t'J T 7 Schottky Barrier Diode Axial Diode • O U T L IN E D IM E N S IO N S D3S6M 60V 3A ■ R A TIN G S ÌÈ ÌÌÌi^ : /E ! Ì& m A bsolute Maximum R atings @ Item Symbol O perating J u n c tio n Tem perature - t± A M & m i± Maximum R everse Voltage


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    PDF fe200 d3s6m RFE-200

    Untitled

    Abstract: No abstract text available
    Text: TM C e n tra l CLL4729A THRU CLL4764A Sem 1.0W ZENER DIODE 5% TOLERANCE ic o n d u c to rC o rp . DESCRIPTION: The CEN TRAL S EM IC O N DU CTO R C LL4729A Series Silicon Zener Diode is a high quality voltage regulator fo r use in surface m ount industrial,


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    PDF CLL4729A CLL4764A LL4729A MAXI58A L4759A L4760A CLL4761 L4762A L4763A L4764A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser


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    PDF LG1625AXF DS99-187HSPL

    Untitled

    Abstract: No abstract text available
    Text: Central" CLL4729A THRU CLL4764A S e m ic o n d u c to r C o rp . 1.0W ZENER DIODE 5% TOLERANCE DESCRIPTION: The CEN TRAL S EM IC O N DU CTO R C LL4729A Series Silicon Zener Diode is a high quality voltage regulator for use in surface m ount industrial, c o m m e rc ia l, e n te r ta in m e n t and c o m p u te r


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    PDF CLL4729A CLL4764A LL4729A CLL4730A CLL4731A CLL4732A CLL4733A CLL4734A CLL4735A