DIODE R 405 Search Results
DIODE R 405 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE R 405 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRKTF 41
Abstract: UL1385 IRKHF CS 112 thyristor
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E78996 10ohms; 10ohi 003014t IRKTF 41 UL1385 IRKHF CS 112 thyristor | |
thyristor BT 161Contextual Info: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability |
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E78996 thyristor BT 161 | |
HPND4050
Abstract: IC STU 404 D HPND-4050
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HPND-4050 D-4050 HPND4050 IC STU 404 D | |
Thyristor ABB ys 150Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
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--25-OÃ T 4512 H diode ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200 | |
MRR 50-10
Abstract: mrr 50-08 MRR50-12 DIODE 73 MRR35 ABB thyristor modules mrr50 thyristor modules mrr ASEA thyristor GTO thyristor
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GRR90. MRR 50-10 mrr 50-08 MRR50-12 DIODE 73 MRR35 ABB thyristor modules mrr50 thyristor modules mrr ASEA thyristor GTO thyristor | |
E.78996
Abstract: 78996 E78996 B40C F 78996 B40c 3500 B40D B40J 78996 diode
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14S5452 B40J/C/D /B40C. /B40D. B40J/B40C/B40D U655M5E DDlb55b B40J/C/D E.78996 78996 E78996 B40C F 78996 B40c 3500 B40D B40J 78996 diode | |
thyristor BT 161Contextual Info: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability |
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Bulletin127092 thyristor BT 161 | |
E78996 rectifier module
Abstract: X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2
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4fl55H52 E78996 B40DL. chargerB40DL/B40CL/JL B40DL/CL/JL E78996 rectifier module X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2 | |
Contextual Info: A S E A BROUN/ABB D • ñ3 SEMICON 004Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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0QQD503 5x10DIN7985 | |
dioda rectifier
Abstract: dt3400 pearson 411
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APT30D60B APT30D50B O-247 O-247AD dioda rectifier dt3400 pearson 411 | |
Contextual Info: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage |
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GG13373 34-Thermal | |
F10P40F
Abstract: C10P40F f10p C10P30F F10P30F F10P30FR F10P40FR C10P-FR
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C10P30F C10P40F F10P30F F10P40F llA/300 00V/trr cl0p30FR cl0p40FR F10P30FR F10P40FR f10p F10P40FR C10P-FR | |
Contextual Info: f i l H A R R RURP6120CC IS S E M I C O N D U C T O R 6A, 1200V Ultrafast Dual Diode O cto b e r 1995 Features • Package Ultrafast with Soft R ecovery. <70ns JEDEC T0-220AB • Operating Tem p eratu |
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RURP6120CC T0-220AB RURP6120CC O-220AB 00h37Ã | |
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Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K |
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IRF7524D1 Rf7524d1 | |
Contextual Info: FAST RECOVERY DIODE H A / 100~ 200V/trr : 35nsec C}OP|OFr C10P20Fr F 10P10Fr F |0P20Fr 10.3i.405 FEATURES 3.4j.l34)r ° Similar to TO-220AB Case ° Fully Mold Isolation F-Type) ° Dual Diodes - Cathode Common and Anode Common (Type-R) ¡¿4^ 55) 4.U.161IMAX |
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00V/trr 35nsec C10P20Fr 10P10Fr 0P20Fr O-220AB 161IMAX C10P10F F10P10F C10P10FRâ | |
Diode LT 450
Abstract: T1961
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APT30D20B O-247 O-247AD T-------19 Diode LT 450 T1961 | |
SMD-247
Abstract: NEMA FR-4
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40EPS. 140pm) 0D21D33 O-247AC SMD-247) SMD-247 NEMA FR-4 | |
Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint |
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554S2 | |
Contextual Info: ADVANCED PO W ER Te c h n o l o g y 1 - Cathoda 2 - Anode Back of Case - Cathode APT15D60K APT15D50K 600V 500V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S PRODUCT FEATURES P R O D U C T B E N E F IT S • Anti-Parallel Diode |
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APT15D60K APT15D50K T0-220 O-22QAB | |
Contextual Info: Bulletin 12076/A International S R e c t if ie r s d 453n / r s e r ie s FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 2.0 to 3.0 iis recovery tim e ■ High voltage ratings up to 2500V ■ High current ca p a bility |
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12076/A D-653 SD453N/R 4A55452 | |
Contextual Info: Bulletin 12037 International Ö Rectifier SERIES 45L R , 150K/L /KS(R) STANDARD RECOVERY DIODES Stud Version Features Alloy diode High current carrying capability High voltage ratings up to 1000V High surge current capabilities Stud cathode and stud anode version |
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150K/L 5545E 00Ebfl53 4AS5452 | |
6AI diodeContextual Info: International IS Rectifier 4Ö5545E Oülb?^ 32fl H I N R SERIES IRK.F152 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate |
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5545E 4ASS452 10ohm 10ohms- 6AI diode | |
Contextual Info: International lÉlRectifier PD-2.463 HFA60MC60C Ultrafast, Soft Recovery Diode HEXFRED Features V R = 600V ISOLATEDBASE • Reduced R F I and EM I V F = 1.5V • Reduced Snubbing • Extensive Characterization of Recovery Param eters Qrr * = 500nC , t |
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HFA60MC60C 500nC Liguria49 |