DIODE RG 83A Search Results

IRF1010EL

Abstract: ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES
Contextual Info: PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.012Ω G ID = 83A†

FB180SA10

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD 9.1651B FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V

CI 4490

Abstract: AN-1005 irf1324pbf
Contextual Info: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

FB180SA10

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 91651C FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V

IRF1324

Contextual Info: PD - 96199 IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 450a

Abstract: IRF1324SPBF 97353A AN-994
Contextual Info: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF132

Abstract: IRF1324SPBF
Contextual Info: PD - 97353 IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

4460 MOSFET

Abstract: IRFB4321PbF AN-1005
Contextual Info: PD - 97103A IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

Contextual Info: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

irfb4321

Abstract: IRFB4321PBF 4460 MOSFET AN-1005 83ca
Contextual Info: PD - 97103 IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

IRFB4321PBF

Contextual Info: PD - 97103 IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

irfb4321

Abstract: 4460 MOSFET AN-1005
Contextual Info: PD - 96215 IRFB4321GPbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

FB180SA10

Abstract: 90028 diode SR 310 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 91651C FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V

4460 MOSFET

Abstract: AN-1005
Contextual Info: PD - 97105A IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

AN-1005

Contextual Info: PD - 97105 IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

irfs4321pbf

Abstract: 4460 MOSFET AN-1005 IRFS432
Contextual Info: PD - 97105A IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching

auirf1324

Abstract: 97482
Contextual Info: PD - 97482 AUIRF1324 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 97482 AUIRF1324 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

SUU50N025-05P

Abstract: ic MARKING QG TB-17
Contextual Info: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS

AUIRF1324

Abstract: AN-994 marking h3a auirf1324s 97483
Contextual Info: PD - 97483 AUIRF1324S AUIRF1324L AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 97483 AUIRF1324S AUIRF1324L AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

ic MARKING QG

Abstract: TB-17 SUR50N025-05P
Contextual Info: SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS