DIODE RG2 Search Results

rg2006

Abstract: A1847 ENA1847 RG2006JS-SB
Contextual Info: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications

RG2006

Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
Contextual Info: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C

UAF41

Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Contextual Info: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver­ wendung als H.F.-, Z.F.- und H.F. Verstärker

RG2006

Abstract: A1434-1 TC-00002137 ENA1434A
Contextual Info: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.

RG2006

Abstract: ENA1434 A1434-1 VRRM600V
Contextual Info: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.

EAF42

Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
Contextual Info: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver­ wendung als HF-, ZF- oder NF-Verstärker

marking dalc

Abstract: DALC208 74HC04 DALC208SC6 SMP75-8 pspice model PIN diode Pspice model
Contextual Info: DALC208 Low capacitance diode array Features • Protection of 4 lines ■ Peak reverse voltage: VRRM = 9 V per diode ■ Very low capacitance per diode: C < 5 pF ■ Very low leakage current: IR < 1 µA 1 SOT23-6L Plastic Benefits ■ Cost-effective solution compared with discrete

Contextual Info: DALC208 Low capacitance diode array Features • Protection of 4 lines ■ Peak reverse voltage: VRRM = 9 V per diode ■ Very low capacitance per diode: C < 5 pF ■ Very low leakage current: IR < 1 µA 1 SOT23-6L Plastic Benefits ■ Cost-effective solution compared with discrete

PIN diode ADS model

Abstract: PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860
Contextual Info: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Agilent HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing

PIN diode ADS model

Abstract: PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 HMPP-3865 MCH18 RG200D
Contextual Info: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Avago Technologies HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing the maximum frequency

EBF11

Abstract: ebf 83 pentode RG2 DIODE philips 4521 ebf 83 s 452-2
Contextual Info: PHILIPS EBF11 DOUBLE-DIODE PENTODE for use as R.F., I.F. and A.F. amplifier DOUBLE-DIODE-PENTHODE pour utilisation en amplifica­ trice H.F., M.F. et B.F. DOPPELDIODE-PENÎODE zur Verwendung als HF-, ZF- und NF-Verstärker Heating : indirect Chauffage: indirect

aml 10 series

Abstract: Scans-001779
Contextual Info: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e

4413

Contextual Info: EBF 2 P H ILIP S DOUBLE-DIODE PENTODE with variable mutual conductance for use as R.F., I.F. and A.F. amplifier DOUBIE-DIODE-PENTHODE à pente variable pour utili­ sation en amplificatrice H.F., M.F. et B.F. DOPPELDIODE-PENTODE mit veränderlicher Steilheit zur

UAF42

Abstract: UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939
Contextual Info: UAF 42 DIODE-PEHXODE with variable mutual conduotance for use as H.F., I.F. and L.F. amplifier DI0DE-PENIHÖD3 à ponte variable pour l'utilisation oomme amplificatrice H.F., K.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Verv/endung als H.F.-, Z.F.— und H.F. Verstärker

Contextual Info: SANKEN ELECTRIC CO., LTD. RG2A １ Scope The present specifications shall apply to an RG2A. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings No.

RG2Y

Contextual Info: RG2Y ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 70 Volts Io : 1.5 Amperes D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free

RG2A DIODE

Abstract: RG2A DIODE RG2A
Contextual Info: RG2A ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 600 Volts Io : 1.0 Ampere D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free

UAF42

Abstract: UAF 41 resistor 0.22 Volvi uaf41 uch41
Contextual Info: U A F 42 U A F 41 U A F 4 2 (U A F 4 1 ) V a ria b le -m u diode-pentode Fig. 1 The U A F 42, show ing the electrode system (approxim ately actual size). The UAF 42 is a variable-mu diode-pentode for A.C./D.C. receivers having a heater circuit carrying 100 mA. The pentode section is intended for use

cps-3500

Abstract: 5972 pentode simple vu audio meter I960 Scans-0017353
Contextual Info: TENTATIVE DATA IU5WA TUNG-SOL • DIODE PENTODE M INIATURE T Y P E - 4 MAX li’ MAX. T -5 4 2 i MAX. A N Y MOUNTING POSITION BOTTOM VIEW MINIATURE BUTTON 7 PIN BASE GLASS BULB 6BW T H E 1U5WA IS A F IL A M E N T T Y P E , S H AR P C U T - O F F , DIODE P E N T O D E IN T H E 7 PIN MINIA­

A13B

Abstract: DALC208SC6 DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9
Contextual Info: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs

A13B

Abstract: FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 DALC208SC6 SC74 DALC SOT23-6
Contextual Info: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs Portable electronics

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

A13B

Abstract: MARKING CODE DALC BV99 a13 marking sot23 74HC04 DALC208SC6 SC74 0118E a13b 5 pin PIN diode Pspice model
Contextual Info: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : n Sensitive logic input protection n Microprocessor based equipment n Audio / Video inputs

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3