DIODE RK 43 Search Results

Diode marking 27C

Abstract: Ss 24 DIODE SMD SMD Marking jx diode smd marking jx MARKING CL4 smd marking YF smd diode 27c diode smd marking VD mark g1f
Contextual Info: Schottky Barrier Diode Single Diode m tm m DG1S4 o u tlin e Package :G 1 F Unu:mm Weight O.Ollii Typ 4 0 V 1A 35 <2) Feature •Î8/J\5!JSMD • • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low VF-0.55V 0.8mm • ô V f =0.55V i |L71 C a th o d e m a rk

Resistor MSB 124

Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Contextual Info: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa­

RRM17

Abstract: asea rrm ASEA rK-11 ASEA static relays Rxotf 4 change over relays rrm-17 ASEA AUXILIARY CONTACT RELAY RK 92-1 E
Contextual Info: Three-phase over-voltage and under-voltage relay type RROTF 4 Corresponding relay of type COMBIFLEX design has the type designation RXOTF 4 and is described in Information RK 434-300 E. • Operates for symmetrical and asymmetrical voltage changes and for open-circuit in three-phase networks

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

TGA4532

Contextual Info: TGA4532 K-Band Power Amplifier Applications • • Point-to-Point Radio Communication Product Features • • • • • • • • • Functional Block Diagram Frequency Range: 17.5 – 20 GHz Power: 32.5 dBm Psat, 31.5 dBm P1dB Gain: 23 dB TOI: 43 dBm @ 22 dBm SCL

Contextual Info: TGA2533-SM Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features • • • • • • • • • Functional Block Diagram 24 Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB

Contextual Info: TGA2535-SM X-Band Power Amplifier Applications • • Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features • • • • • • • • Functional Block Diagram 24 Frequency Range: 10 – 12 GHz TOI: 43 dBm Power: 34.5 dBm Psat, 33 dBm P1dB

rxms1 abb

Abstract: abb rk 216 rxms1 case dimensions rk 12 e ABB RXMS1 B03-1003E RXMS1 RXMS 1 237-AN RXMS
Contextual Info: m n Type RXMS 1 i l i m i ASEA BROWN BOVERI B03-1213E Page 1 January 1989 Changed sin ce June 1987 Data subject to change without notic High-speed tripping relay, 2 or 6 contacts I ABB Relays Abstract *N • Operate time: 3.5—4 ms or 5 -5 .5 ms • DC voltage operated; rated voltages from

pt100 amplifier schematic

Abstract: schematic diagram 240 AC to 110 DC converter RQM04 84-11E 002-AA pt100 temperature probe circuit diagram pt100 schematic 0150C 002-AB RXY4
Contextual Info: Catalogue RK 84-11 E Edition 1 1979-10 File R, Part 1 Temperature monitoring system type RANVB Contents Design Mode of operation Setting the operating value Technical data Installation Connections Ordering Reference publications £ SANVfi ^ • S H ASSA AS IA

UAF42

Abstract: UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939
Contextual Info: UAF 42 DIODE-PEHXODE with variable mutual conduotance for use as H.F., I.F. and L.F. amplifier DI0DE-PENIHÖD3 à ponte variable pour l'utilisation oomme amplificatrice H.F., K.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Verv/endung als H.F.-, Z.F.— und H.F. Verstärker

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

RK 723 007

Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
Contextual Info: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with

ASEA thyristor

Abstract: RK 924 RK 211 175 asea designation
Contextual Info: ASEA Catalogue RK 31-10 E Edition 2 November 1974 Time-lag relay type RXKT 2 □ □ □ is available with tim e scales 0.2—2 s, 1—10 s, 6 -6 0 s and 0 .5 -5 min Is suitable fo r d.c. supply Requires no auxiliary voltage □ Is used in, for example, relay protections and automatic equipment for

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

6bv8

Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Contextual Info: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

diode 524 U1J

Abstract: RK713 diode U1J 041 asea type ir A4S07 rxtma1 RELAY nais S4 524 U1J mte relay u1j capacitor
Contextual Info: Catalogue RK 71-10 E ASEA Edition 1 Plug-in type relay units •S Registered trade mBrk Filo R, P a r ti CÌOÌMÌBÌÌ Contents General Ftesistor urtil RXTMA 1 Electrolytic capacitor unit RXTCB 1 flXTCB £ OlL-111led capacitor unit RXTCA 1 im pulse storing units

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

REALTEK 1186

Abstract: EM329 BA3948 WN0113 WN0103 bh7880 M78A WN0127 ICH4 rm65
Contextual Info: B VB161AX A Ginger Main Board 01 C D Index System Block PAGE 4 Version History PAGE CONTENTS 21 Pullup for PCI / SMB Selector 41 CN Mini-PCI 02 Block Diagram 22 FWH / DEBUG CN / PCI REQ Cut off sw 42 CN MDC 03 R-C for EMI 23 S-Video 43 CN SD-SLOT 04 PLL 24

12AT6

Abstract: 6at6 6AT6-12AT6 12at6 diagram 6at6 tube T1447 tube 12AT6 12at6 tube ga 39 diode general electric
Contextual Info: 6AT6 12AT6 ET-T1447 Page 1 6AT6-12AT6 2-57 DUPLEX-DIODE TRIODE TUBES DESCRIPTION AND RATING The 6AT6 is a miniature, duplex-diode, high-mu triode designed for use as a combined detector, amplifier, and automatic-volume-control tube. Except for heater ratings, the 12AT6 is identical to the 6AT6.

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)