DIODE RL 201 Search Results

Contextual Info: Photo IC diode S11154-201CT Reduced color temperature errors The S11154-201CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current amplifier circuit, in order to have sensitivity almost only in the visible range and reduce the color temperature errors.

MASW-000834-13560T

Abstract: MADR-008851-000100 S2083 0603CS-27NXJLW MASW-000834 masw 000834 madr-008851
Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • • • • • • • • Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA

Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 35 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features M/A-COM Products Rev. V1 Functional Diagram TOP VIEW • • • • • • • • Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: TX = 0.33 dB @ 2010MHz, 5V / 20mA

MaCom

Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features M/A-COM Products Rev. V2 Functional Diagram TOP VIEW • • • • • • • Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA

Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features M/A-COM Products Rev. V3 Functional Diagram TOP VIEW • • • • • • • • Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

S2083

Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • Exceptional Broadband Performance, 0.05 - 6.0 GHz  Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA  Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA

MASW-000834-13560T

Abstract: MADR-008851-000100 MASW-000834 0603CS-27NXJLW S2083 madr-008851
Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • Exceptional Broadband Performance, 0.05 - 6.0 GHz  Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA  Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA

BF1118

Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

BF1118

Abstract: MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

TRANSISTOR REPLACEMENT GUIDE

Abstract: 66227
Contextual Info: 66227 PROTON RADIATION TOLERANT OPTOCOUPLER Pin-For- Pin Replacement For 4N49 OPTOELECTRONIC PRODUCTS DIVISION 06/20/2011 Features: Applications: •         Current Transfer Ratio-200% typical 1kVdc electrical input to output isolation

Contextual Info: 66224 PROTON RADIATION TOLERANT OPTOCOUPLER Single Channel, Electrically Similar to 4N49 OPTOELECTRONIC PRODUCTS DIVISION 09/21/2012 Features: Applications: •          High Reliability Base lead provided for conventional transistor

Contextual Info: 66224 PROTON RADIATION TOLERANT OPTOCOUPLER Single Channel, Electrically Similar to 4N49 OPTOELECTRONIC PRODUCTS DIVISION 09/21/2012 Features: Applications: •          High Reliability Base lead provided for conventional transistor

proton

Abstract: 4N49 JANTX 66224 4N49
Contextual Info: 66224 PROTON RADIATION TOLERANT OPTOCOUPLER Single Channel, Electrically Similar to 4N49 OPTOELECTRONIC PRODUCTS DIVISION 09/29/2010 Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor

Contextual Info: 66193 PROTON RADIATION TOLERANT OPTOCOUPLER REPLACEMENT FOR 3C91C OPTOELECTRONIC PRODUCTS DIVISION 05/06/2013 Features: Applications: •          High Reliability Base lead eliminated for improved noise immunity Rugged package

Contextual Info: 66193 PROTON RADIATION TOLERANT OPTOCOUPLER REPLACEMENT FOR 3C91C OPTOELECTRONIC PRODUCTS DIVISION 05/06/2013 Features: Applications: •          High Reliability Base lead eliminated for improved noise immunity Rugged package

kr131

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary PS2561F-1,PS2561FL-1 DIP PHOTOCOUPLER, OPERATING AMBIENT TEMPERATURE 110°C <R> Data Sheet R08DS0033EJ0100 Rev.1.00 Jan 06, 2012 DESCRIPTION The PS2561F-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon

diode Rl 201

Abstract: MSW2010-201
Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2010-201 & MSW2011-201 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 125 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)

Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2010-201 & MSW2011-201 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 125 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)

Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2010-201 & MSW2011-201 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 125 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)

Contextual Info: SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 SM72295 Photovoltaic Full Bridge Driver Check for Samples: SM72295 FEATURES DESCRIPTION • • • • • The SM72295 is designed to drive 4 discrete N type MOSFET’s in a full bridge configuration. The drivers

Contextual Info: SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 SM72295 Photovoltaic Full Bridge Driver Check for Samples: SM72295 FEATURES DESCRIPTION • • • • • The SM72295 is designed to drive 4 discrete N type MOSFET’s in a full bridge configuration. The drivers

Contextual Info: SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 SM72295 Photovoltaic Full Bridge Driver Check for Samples: SM72295 FEATURES DESCRIPTION • • • • • The SM72295 is designed to drive 4 discrete N type MOSFET’s in a full bridge configuration. The drivers