DIODE S 360 Search Results

diode 31 DQ 05

Contextual Info: DIGITALLY CONTROLLED, 360-DEG. PIN DIODE P H A S E SH IFTER S E R IE S DQ GENERAL INFORMATION: KDI/Triangle's Series DQ digitally controlled PIN-diode phase shifters vary the phase of a micro­ wave signal in response to a TTL-compatible logic input signal.

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

Contextual Info: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC6M 60V 360A l> US V f ► s jc ô '/ jv ^ u > *§ k S R S Ü »DC/DC H C x T .^ Ü f ê É I l f i : « * r s t f i < f i ÿ v>) RATINGS a Item s Absolute Maximum Ratings

BSM30GP60 INVERTER CIRCUIT

Abstract: BSM30GP60
Contextual Info: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier

Contextual Info: Si G E C P L E S S E Y NOVEMBERS SEM IC OND UCT OR S DS4180-4.0 DNB64 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS V RRM 3600V 2530A 'fs m 27000A I F a v , ■ Welding. ■ Battery Chargers.

Contextual Info: v a y Schottky Barrier Diode Diode Module â D360SC4M OUTLINE DIMENSIONS C a s e : M odules 40V 360A B a a • * s i tyi-jb • ê V f • * S S R B S •D C /D C D V A ’- ÿ • I C x X S 1- • Æ tè ü RATINGS • Î ë fc H t^ A È fë m Absolute Maximum Ratings

Contextual Info: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings

C11159

Abstract: NX7300BA-CC NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7301BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.

Contextual Info: S i GEC P L E S S E Y augustes S E M IC OND UC TOR S DS4189-2.3 DS2007SF RECTIFIER DIODE KEY PARAMETERS v RRM 4000V 1225A | f a v 25000A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

Contextual Info: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series

Contextual Info: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

Contextual Info: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

hz nec

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.

NX7300BA-CC

Abstract: NX7300CH-CC NX7301BA-CC NX7301CH-CC NX7302BA-CC STM-16 10 gb laser diode nec 2502 4 pin
Contextual Info: DATA SHEET LASER DIODE NX7301BA-CC,NX7301CH-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC and NX7301CH-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.

NX7300BA-CC

Abstract: NX7300CH-CC NX7301BA-CC NX7301CA-CC NX7302BA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7301BA-CC,NX7301CA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC and NX7301CA-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.

Contextual Info: Schottky Barrier Diode Diode Module Wtm D360SC6M OUTLINE 60V 360A Feature V 3. —I \j • • f iV • High lo Rating-M odule-PKG • Low V f f • Sm all B jc Main Use • High Po w er S w itching Regulator • D C / D C Z \ y jï- S • S ’ • IC x X i?

D360SC5M

Abstract: SHINDENGEN DIODE
Contextual Info: va y $ 'T ^ — K Schottky Barrier Diode ï / a - A Diode Module o u t l in e d i m e n s io n s D360SC5M Case : Modules 50V 360A © © •C V F • ô jc M 'J U ffl i * •D C /D C U V A -S ? mxmoytïD.-? RATINGS Absolute Maximum Ratings m Fi Item Storage Temperature

marking code 43b

Abstract: TSZ22111-03 DIODE Sp marking code 15B diode TSZ2211103 43B diode
Contextual Info: PRODUCTS Zener diode 1. 2. 3. 4. PRODUCT TYPE APPLICATION FEATURE PAGE 1/ 2 TYPE C D Z B s e r i e s Zener diode Silicon Epitaxial Planer C D Z B s e r i e s Voltage regulation Ultra small mold type (VMN2) By chip-mounter, automatic mounting is possible

Contextual Info: Twin Diode Diode Module O U T L IN E D IM E N S IO N S D30VCD 600V 30A • Ë te ft RATING S Absolute Maximum Ratings IS s Item « » a * Storag» Temperatur« Operating Junction Temperature -ö-AäSiS'SfE Maximum Reverse Voltage a * « * Average R ectified Forward Current

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.—Jb Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC4M 40V 360A l> US V f ► sjcô '/jv^u > *§ kS R S Ü »DC/DC H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings a Item

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5501

Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and