DIODE S 403 Search Results

JAN 1N4500

Abstract: 1N4500
Contextual Info: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con­ ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403

JAN 1N4500

Contextual Info: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n ­ d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403

kc 2026

Abstract: 100 KC 1N995 1N995M mil-s-19500 color coding
Contextual Info: M IL-S-I9500/227 NAW j 16 AnrU 1062 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M 1. SCOPE 1.1 Scope. This specification covers the detail requirem ents for a germ anium switching diode and U in accordance with Specification M IL -S-19500. except as otherw ise specified herein.

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • b b S S ^ l DD2b43fl T17 IAPX BB911 l VHF VARIABLE CAPACITANCE DIODE The BB911 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band A up to 160 MHz in all-band tuners.

D8L60

Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D8L60 600V 8A • h iîj ï • tr r 7 0 n s • 7 ,llÆ - ,lb K m m •P F C •SRSÎÜ •T V + B s RATINGS Absolute Maximum Ratings a a Operating Junction Temperature Average Rectified Forward Current

mmc 4011 E

Abstract: kdt 633 10Q18 photometer BV1010
Contextual Info: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

DSA015

Contextual Info: Ordering number : EN1215C No.l215C / _ P S A015 Silicon Epitaxial Planar Type High-Speed Switching Diode F e a tu re s •Ideally suited for use in hybrid ICs because of very small-sized package • Fast switching speed

IN4500

Abstract: IC 4011 1N4500 fluorescein MIL-STD-1276 Scans-0016000
Contextual Info: MIL SPECS I C | 0000125 0 0 03 35 0 4 | MIL-S-19500/403 USAF NOTICE 1 „ ^ I NOTICE I IOF VALIDATION I MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N45Û0 AND TX1N450Ü MIL-S-19500/403(USAF), dated 8 July 1968, has been reviewed and determined to be

B988

Abstract: SVC321 diode F48 G99G varactor diode AM 321SPA ci 4077 4043K CI 4037
Contextual Info: No.G99G SA \YO S V C 3 2 1 ,= i Diffused Ju n c tio n Type S ilicon Diode I V aractor Diode IOCAP for AM Receiver Electronic T uning J / / X X / ’ /' / / j 'e a t u re s T he SV C321, 321SPA a re v a ra c to r diodes w ith a good lin e a rity a rç d /iig h p p a c i ^ n c è r a ^ y l h a t is

MC 4011 B

Abstract: 1N3207
Contextual Info: MIL SPECS I C | 0 0 G D 1 2 S DOOSSEb T |~~ INCH-POUND NOTICE OF VALIDATION MIL-S-19500/230C NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN - 1N3207 Military specification MIL-S-19500/230C, dated 12 February

ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Contextual Info: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August

smd diode 708

Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Contextual Info: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate

Contextual Info: TLP591B GaAÔAs IRED a PHOTO-DIODE ARRAY T LP5 9 1 B Unit in mm TELEC O M M U N IC A TIO N P R O G R A M M A B L E CONTROLLERS M O S GATE DRIVER n3 n2 n1 M O S FET GATE DRIVER The TOSHIBA TLP591B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo­

IC 4011

Abstract: 1N4376 282-C diode rectifier 1n 4001 1N4376 JAN Scans-0016000
Contextual Info: MIL SP ECS MME D • 0 0 G 0 12 S GGanSD 5 ■MILS I I I INCH-POUND I I_ 1 MIL-S-19500/282C 23 June 1992 SUPERSEDING MIL-S-19500/282B 31 January 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N4376 JAN AND JANTX

VB025-16A02

Abstract: VB025-16N02 DIODE RECTIFIER BRIDGE VB025-12N02 VB025-06N02 16A02 E72873M VB025 GG01
Contextual Info: HbE D • t4 b ô b 2 5 b GG01S73 S MIXY I X Y S CORP □IXYS November 1991 Datasheet No. 911013A Single-Phase Diode Rectifier Bridge VB025 • Avalanche Rated Parts Available ■ Isolated Direct Copper Bond Base Plate

IN3070

Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,

403A-03

Abstract: diode 1bl3 1BL3 1bl3 motorola
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with

Contextual Info: DAN 403 200 mW Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Nominal power dissipation Nenn-Verlustleistung 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 9 Pin-Plastic case 9 Pin-Kunststoffgehäuse 80 V 13 x 3.5 x 6.6 [mm]

minor project proposal on electronics

Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Contextual Info: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C

of IC 4511

Abstract: CI 4011 IC 4011 1N5186 1N5187 1N5188 1N5190 DIODE PK IN 4001 origin semiconductor rectifier Scans-0016000
Contextual Info: I^ lG O D D lS S MIL SPECS DDDl4G3fi 7 M IL-S-19500 '424 AMENDMENT 2 SUPERSEDING I AMENDMENT 1 16 January 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190

Contextual Info: DAN 403 200 mW Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Nominal power dissipation Nenn-Verlustleistung 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 9 Pin-Plastic case 9 Pin-Kunststoffgehäuse 80 V 13 x 3.5 x 6.6 [mm]