SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
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SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.
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10MHz
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Untitled
Abstract: No abstract text available
Text: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light
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S10108,
S10109
S10108
S10109
S10108:
S10109)
B1201,
KPIC1066E02
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode switches - SPST SPST Electrical characteristics @ 25° C Model Direct Reverse Bias Bias S1B502 SRB502 S1D502 SRD502 S1B2004 SRB2004 S1D2004 SRD2004 S1B4008 SRB4008 S1D4008 SRD4008 Bias requirements: Direct bias: Frequency range
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S1B502
SRB502
S1D502
SRD502
S1B2004
SRB2004
S1D2004
SRD2004
S1B4008
SRB4008
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cds photo diode
Abstract: S10108
Text: PHOTO IC Photo IC diode assembly S10108, S10109 For flame eye/using photo IC diode RoHS compliance instead of CdS cell S10108 and S10109 sensors are designed specifically for flame detection (flame eye) in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of conventional CdS cells and are available with 2 types of incident light direction (head-on
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S10108,
S10109
S10108
S10109
S10108:
S10109)
SE-171
KPIC1066E01
cds photo diode
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cds photo diode
Abstract: diode assembly
Text: PHOTO IC Photo IC diode assembly S10108, S10109 For flame eye/using photo IC diode RoHS compliance instead of CdS cell S10108 and S10109 sensors are designed specifically for flame detection (flame eye) in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of conventional CdS cells and are available with 2 types of incident light direction (head-on
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S10108,
S10109
S10108
S10109
S10108:
S10109)
SE-171
KPIC1066E01
cds photo diode
diode assembly
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H24 SMD DIODE
Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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BDD20101213
H24 SMD DIODE
electrical circuit diagram reverse forward move d
12v bulb 220 supply diagram
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electrical circuit diagram reverse forward move d
Abstract: H24 SMD DIODE
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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BDD20101213
electrical circuit diagram reverse forward move d
H24 SMD DIODE
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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DIODE K9
Abstract: No abstract text available
Text: S1A.S1M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /3 Surface mount diode Standard silicon rectifier diodes S1A.S1M 3
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S10VT60
Abstract: No abstract text available
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT60 Case : 2F: SVT Case Unit : mm 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S10VT60
S10VTx
S10VT60
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S10045
Abstract: violet laser diode chip
Text: Patent Pending PHOTODIODE Si PIN diode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
violet laser diode chip
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Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si PIN diode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
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S15SC4M
Abstract: No abstract text available
Text: SHINDENGEN Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SC4M Case : MTO-3P Unit : mm 40V 15A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ●High current capacity APPLICATION ● Switching power supply ●DC/DC converter
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S15SC4M
Tj150
S15SC4M
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SIN15
Abstract: S15SCA4M
Text: SHINDENGEN Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SCA4M Case : TO-220 Unit : mm 40V 15A FEATURE FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche guaranteed ● High current capacity with Small Package APPLICATION ● Switching power supply
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S15SCA4M
O-220
Tj150
SIN15
S15SCA4M
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S10VT80
Abstract: high Forward Voltage Diode
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT80 Case : 2F: SVT Case Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S10VT80
S10VTx
S10VT80
high Forward Voltage Diode
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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S15VT60
Abstract: No abstract text available
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VT60 CaseCase : 2F: SVT Unit : mm 600V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S15VT60
S15VTx
S15VT60
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DS16BN
Abstract: DS16B LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 350 v 30 a diode rectifier DS-16B high voltage rectifier diode DIODE y 12 mitsubishi bridge rectifier
Text: MITSUBISHI RECTIFIER DIODE STACK ASSEMBLY DS16BN MEDIUM POWER RECTIFIER USE D E S C R IP T IO N O U T L IN E D R A W IN G Dim ension : mm Mitsubishi type D S1 6 B N series are Medium power rectifier diode stack assemblies using high reliability rectifier diode. These stack assemblies are
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DS16BN
DS16BN
DS16B
LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
350 v 30 a diode rectifier
DS-16B
high voltage rectifier diode
DIODE y 12
mitsubishi bridge rectifier
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Untitled
Abstract: No abstract text available
Text: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.
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QQ242S4
BAL99
7Z690B6
BAW62
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