DIODE S1 61 Search Results

Contextual Info: AP6900GSM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance ▼ RoHS Compliant SO-8 S2/A G2

Contextual Info: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 S1/D2 S1/D2 G1 Simple Drive Requirement DC-DC Converter Suitable CH-1 BVDSS Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description 30V

ap6900gsm

Contextual Info: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description

Contextual Info: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of

Contextual Info: STANDARD SPST SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

S1H3

Abstract: M103 M105 S1X2
Contextual Info: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

61-1230.0

Abstract: 6192 kaba key pcb DC-13 russian diode 611-100 kaba
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 61 Switches and Indicators 61 Contents 61 Description . 3 Product Assembly . 4

61-1230.0

Abstract: IEC 60947-5-1 switch 10-2J09 DC-13 lamp t1 102J12 10-2J12
Contextual Info: Switches- and Indicators 61 Contents 61 Description . 3 Product Assembly . 4

ISQL5

Contextual Info: *3 7 S C S -T H O M S O N L L V # 6 1 14 6115 QUAD 100 V, DMOS SWITCH DUTPUT VOLTAGE TO 100 V 3 .7 n R d s O N MultiPower BCD Technology SUPPLY VOLTAGE UP TO 60 V -O W INPUT CURRENT FTLVCMOS COMPATIBLE INPUTS HIGH SW ITCHING FREQUENCY (200 KHz) S C R IP T IO N

10-2J12

Abstract: DC-13 N 4007 diode
Contextual Info: Switches- and Indicators 61 Contents 61 Description . 5 Product Assembly . 6

Si4816DY

Abstract: Si4816DY-T1-E3
Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21

Si4816DY

Abstract: Si4816DY-T1-E3 Si4816D
Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a

Contextual Info: Si1967DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.3a 0.640 at VGS = - 2.5 V - 1.2 0.790 at VGS = - 1.8 V - 1.0 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1988DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 1.6 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1970DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a VDS (V) 30 Qg (Typ.) 1.15 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 6 • Halogen-free According to IEC 61249-2-21

diode d2 6pin

Abstract: SI1922EDH-T1-GE3 SI1922EDH marking 43 6pin
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Si4340DY-T1-E3

Abstract: Si4340DY
Contextual Info: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

marking code vishay soic

Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

SI1922EDH-T1-GE3

Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21