DIODE S1 85 Search Results

sfp transceiver

Contextual Info: PT6-S1-4103L www.palconnusa.com Description The PT6-S1-4103L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated duplex data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light

sfp transceiver

Contextual Info: PT1-S1-4203L www.palconnusa.com Product Overview The PT1-S1-4203L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated duplex data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light

APT0502

Abstract: APT0601 APTM120A20SG
Contextual Info: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated

diode 1000v 50a

Contextual Info: APTM120A20S Phase leg Series & parallel diodes MOSFET Power Module G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated

MARKING S1

Abstract: SDS511Q
Contextual Info: SDS511Q Semiconductor Switching Diode Features • • • • Ultra high speed switching application Low forward voltage Fast reverse recovery time Small total capacitance Ordering Information Type No. Marking SDS511Q Package Code S1 SOD-523 Outline Dimensions

S1 SOD-323

Abstract: SDS511 ultra fast 80V 100ma SOD323
Contextual Info: SDS511 Semiconductor Switching Diode Features • • • • Ultra high speed switching application Low forward voltage Fast reverse recovery time Small total capacitance Ordering Information Type No. SDS511 Marking Package Code S1 SOD-323 unit : mm 1.25±0.1

Contextual Info: APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module OUT Features • - S1 Q2 G2 S2 0/VBUS  Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF

BBY31

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAIL BBY31 – S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range

BBY31

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 . SSUE 3 -FEBRUARY 1996 PIN CONFIGURATION • I _L X T PARTMARKING DETAIL BBY31-S1 1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamt^25°C P,o, Tj’Tstg Operating and Storage Temperature Range

Contextual Info: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of

Contextual Info: STANDARD SPST SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SPST SWITCHES Advanced Control Components The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

S1H3

Abstract: M103 M105 S1X2
Contextual Info: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 3 - FEBRUARY 1996 Hr PIN CO N FIG U R A TIO N 1 Z P A R TM A R KIN G D ETA IL B B Y 3 1 - S1 1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L Power D issipation at T amb=25°C P,o, Operating and Storage Tem perature Range

MIL-STD-12

Abstract: 1N4500 Krypton-85
Contextual Info: MI l - S - I 9 5 0 0 /U 0 3 USAF B J u l y I9 6 8 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N 4500 and TX1N4500 1. SCOPE 1 S1 S c o p e » T h is s p e c i f i c a t i o n c o v e r s t h e d e t a i l r e q u ir e m e n ts f o r s i l i c o n ,

s2dg1

Contextual Info: CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability.

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SKiiP 83 AC 12 i t 1

Abstract: SKiiP 83 AC 12 i t semikron skiip 83 83AC12 SKiiP 83 AC 12 SKIIP 83 AC 12 T 12 SKiiP 83 AC 12 i t 2 SKiiP 82 AC 12 i t 1 ct3 "current sensor" SKIIP
Contextual Info: SKiiP 83 AC 12 - SKiiP 83 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.

JESD22

Abstract: STG6684 STG6684QTR
Contextual Info: STG6684 High isolation dual SPDT analog switch Features • Ultra high off-isolation: -80 dB typ at 1 Mhz ■ Ultra low power dissipation: ICC = 0.2 A (max.) at TA = 85 °C ■ RPEAK on Tn = 1.30 Ω max (TA = 25 °C) at VCC = 4.3 V ■ RPEAK on Sn = 0.55 Ω max (TA = 25 °C)

Contextual Info: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:

ID40A

Contextual Info: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）