S2E20
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode switches - SP2T SP2T Electrical characteristics @ 25° C Model Frequency range GHz S2E501 0.5 - 1 S2E1002 1-2 S2E2004 2-4 Bias requirements: (1) Insertion loss: (2) Isolation: Insertion loss (dB) (1) max. 1 1 1.1 Isolation Switching speed
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S2E501
S2E1002
S2E2004
S2E20
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s2e diode
Abstract: BH204 DIODE S2E
Text: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz
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SH92103
SH93103
BH204
SH92103
SH93103
s2e diode
DIODE S2E
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K2057
Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Text: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series
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BCE0017A
2SK2610)
2SK794)
K2057
toshiba k2057
tpc8107 equivalent
2SK2313 equivalent
2SK794
2sK2750 equivalent
2SK2996 equivalent
2SK1379
2SK2610 equivalent
2SK3662
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toshiba smd marking
Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency
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1/929 rev oh s26
Abstract: No abstract text available
Text: ES51964 6600counts Dual Display Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V
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ES51964
6600counts)
00kHz
600nF
00MHz
10kHz)
cl113
RS232
SEG34
SEG33
1/929 rev oh s26
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Untitled
Abstract: No abstract text available
Text: ES51968 6600counts Dual Display/Inrush Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V
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ES51968
6600counts)
00kHz
600nF
00MHz
10kHz)
RS232
SEG35
SEG34
SEG33
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metal rectifier diode
Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
Text: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)
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b4312Sel
110MP
100pA
T0220
metal rectifier diode
DIODE S2E
D026
Super matched pair
d041
12 pulse diode rectifier
D07 15 diode
diode d07 104
FAST RECOVERY DIODE 1A
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DIODE S2E
Abstract: No abstract text available
Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery
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T-39-01
110MP
100pA
T0220
OT-23
DIODE S2E
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DIODE S2E
Abstract: 810P A618 s2e diode
Text: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 - j l o 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm
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Untitled
Abstract: No abstract text available
Text: E UP EC S2E J> 34032^7 0G0GS7G *450 * U P E C A 1250 S lÿpenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1300 V 15 V 50 V qrm V rrm V r r m C tp = 1 «S
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Untitled
Abstract: No abstract text available
Text: S2E » EUPEC A 438 S 3403217 0000554 EPS « U P E C • 'P Z S -l'N Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1300 15 V 50 V V drm V rrm V rr m C
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T930S
Abstract: A358S A438S T128F T318F T698F EUPEC tt 104 EUPEC tt 25 N 12 ST178 T510S
Text: S2E J> EUPEC aHGBET? 0G0057Q 45Ô M U P E C A 1250 S ^ 2 * 5 '2 - 1 600 lÿpenreihe/Type range Elektrische Eigenschaften Höchstzulässige Werte 1000 1100 1200 1300* —0* Electrical properties Vrrm tp= 1 «S 'rfTj ’ "/j Itavm tc = 85°C tc = 70°C
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A1250
T-91-20
T930S
A358S
A438S
T128F
T318F
T698F
EUPEC tt 104
EUPEC tt 25 N 12
ST178
T510S
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transistor 1BW 57
Abstract: IGBT EUPEC
Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften
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GGG0232
transistor 1BW 57
IGBT EUPEC
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TRANSISTOR KT 838
Abstract: FF200 UTG 16 diode sg 5 ts
Text: FF 200 R 06 KF EUPEC S2E ]> Rthjc Elektrische Eigenschaften Electrical properties V ces Maximum rated values 600 V 200 A RthCK lc G G 00232 Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 *1 7 T T l •UPEC Thermal properties 0,08 0,16 0,03 0,06 DC, pro Baustein / per module
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GGG0232
34D32CI7
TRANSISTOR KT 838
FF200
UTG 16
diode sg 5 ts
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J975
Abstract: 1BW TRANSISTOR 733transistor
Text: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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000020b
sat00
J975
1BW TRANSISTOR
733transistor
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TRANSISTOR FF75
Abstract: 1BW TRANSISTOR
Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module
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34D32CI7
TRANSISTOR FF75
1BW TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS
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Differential Pressure Transducer BHL
Abstract: 1-8256
Text: CALEX MA N UF AC T UR I NG CO S2E lflllSSD D DD01G33 07^ B K EX Model 165 Bridgesensor 510 687-4411 (800) 542-3355 FAX: (510) 687-3333 FEATURES • No other Function Modules Needed. Just Add Power. • Under or Over Voltage Alarm Function Built-in. • Power Almost any Transducer with 4 to 10 Volt
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DD01G33
MK165
Differential Pressure Transducer BHL
1-8256
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WR24D15/1000u
Abstract: WR48D12/1250U computer products wr24D12
Text: COMPUTER PRDTS/ POWER S2E D H 5313103 OODObBT 2fl7 BCPR WR-U SERIES Single and Dual Output 30 W att DC/DC Converters • • • • • • 30 W atts 2:1 Input Range Efficiency to 86% Isolated Outputs 2 Year W arranty For new designs, please see the NFC Series
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00D0b3cÃ
48VDC.
WR24D15/1000u
WR48D12/1250U
computer products wr24D12
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Untitled
Abstract: No abstract text available
Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module
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LN800
Abstract: C2E1 F400 diode f400
Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties
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D0DD25fl
34D32CI7
LN800
C2E1
F400
diode f400
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LM12
Abstract: lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K
Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic
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T-79-23
LM12
lm12 op amp
ILM12
LM12 OP amp IC
LM12CK
OF IC 723 linear regulator
LM12K
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LM12K
Abstract: BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation
Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic
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T-79Z3
TUH/8704-29
LM12K
BRIDGE-RECTIFIER 5v 1A
BRIDGE-RECTIFIER 15v
LM12CK
LM12CLK
BRIDGE-RECTIFIER 100v 1a
op amp 40v 100w
LM12C
LM12
BRIDGE-RECTIFIER operation
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diac SBS 14
Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation
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