DIODE S2F Search Results

marking sb diode

Abstract: diode schottky 5 A SMB case 0615 S2FB 40V2A
Contextual Info: DSB 2 I 40 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 40 SB (S2FBB) 40 V 2A 0.42 V Features / Advantages: Applications: Package: ● Very low Vf

Contextual Info: SIEMENS SFH 483401 SFH 483406 GaAlAs-LASER DIODE 1000 mW WITH FC-CONNECTOR 750 m W 2 Package Dimensions in mm SFH 483401 1 2 3 4 SFH 483406 11.7 ±0 3 NC NTC NTC laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode NC ' 59

DIODE S2F

Abstract: Diode s6f
Contextual Info: RECTIFIER, up to 1kV, 2A, 150-500ns January 7, 1998 1N5615 thru 1N5623 S2F thru SOF TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com A X IAL LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE Q UICK REFERENCE DATA Low reverse recovery time Hermetically sealed in Metoxiiite fused metal oxide

DIODE S2F

Abstract: JANTX 1N5619 semtech 1N5615 1N5617 1N5619 1N5621 1N5623 JANTX 1N5615 1M5619 1N5619 DIODE
Contextual Info: SÖE J> SEUTECH CORP 6 1 3 ^ 1 3 ^ □ □ □ 2 5 T 7 1 4 S BiSET 1N5615 thru 1N5623 S2F thru SOF FAST RECOVERY QUICK REFERENCE DATA AXIAL LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE • • • • • Low reverse recovery time Hermetically sealed in Metoxilite fused metal oxide

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

S2HB20

Abstract: s2hb40z Shindengen Electric Mfg S2HB10 1s922 equivalent 1S1477 1S924 1S94 1S1476 1S1479
Contextual Info: SILICON RECTIFIER DIODE « S h o w s avalanche U n it : mm Fig.9 F ig.12 Fig. IS Type color code polarity mark ^ _T P , Type color code Iplace [S 2R C Z : 2place) / —1 5.5ÍAK W eig ht: 1 ( g ) W e ig h t: 1 . 5 ( g ] Fig. 1 0 M 1 5 X P 1 .5 Fig. 1 3 ^7max

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

dmo 265 r

Abstract: M7 diode footprint wave soldering PCD3332-X Cassio dmo 265 DIP28 PCD3332-2 PCD3332-2P PCD3332-2T PCD3332-3
Contextual Info: Preliminary specification Philips Semiconductors Multistandard pulse/tone repertory diallers/ringers_ PCD3332-X family FEATURES • Ringer tone generator • Pulse and DTMF mixed mode dialling • Ringer-input frequency discriminator • 13 number repertory dial up to 32 digits

i354

Abstract: 2N7222 IRFM440 IRFM440D i-354
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: 4fiSS452 001522b bOl • INR International g j i Rectifier HEXFET Power MOSFET • • • • • • • PD-9.841 IR F I 9Z 24 G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature

s2hb40z

Abstract: S2HB20 S2HB40 j330 S2HB10 S3G80Z 1S1477 1S934 S2Hb S3G10
Contextual Info: C A T . N O . J330 —1 S3G8Z Dimensions Weight : 1 g Unit : (mm) Features 1. Sm all and ru gged c o n s tr u c t i o n c o n v e n i e n t for built-in wiring. 2. High s urge c u r r e n t limits o v e r v o l t a g e c a p a c i t i e s as c o m p a r e d

1/929 rev oh s26

Contextual Info: ES51964 6600counts Dual Display Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V

Contextual Info: ES51968 6600counts Dual Display/Inrush Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V

BAR54

Abstract: bar55 bar62 K2809 1000v 3a diode 113 16 LF 660A r27-200 s34 power diode DIODE S2F 600-count
Contextual Info: ES51964 6600counts Dual Display Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V

BAR54

Abstract: r27-200 ZR 500k resistor LPc3 bar55 6600A
Contextual Info: ES51965 6600counts Dual Display/PEAK Features • Low pass filter auto switching mode for ACA/ACV measurement • 6,600 counts dual LCD display • Band-gap reference voltage output • 128L QFP package • CE selection (DC/AC 1010V, DC/AC 610V) • 3.3V DC power supply

Contextual Info: ES51965 6600counts Dual Display/PEAK Features • 6,600 counts dual LCD display • 128L QFP package for • Band-gap reference voltage output • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s

Contextual Info: FDPC4044 Common Drain N-Channel PowerTrench MOSFET 30 V, 27 A, 4.3 mΩ Features General Description „ Max rS1S2 on = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device is designed specifically as a single package solution

Contextual Info: FDPC4044 Common Drain N-Channel PowerTrench MOSFET 30 V, 27 A, 4.3 mΩ Features General Description „ Max rS1S2 on = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device is designed specifically as a single package solution

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

15n50

Abstract: STH15N50 STW15N50 STH15N50FI ISOWATT218
Contextual Info: _71S1237 QG45T2fl T33 • S G T H STH15N50/FI STW15N50 SGS-THOMSON ilIO T « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 STH15N50FI STW 15N50 . ■ . . ■ . V dss RDS on Id 500 V 500 V 500 V < 0.4 Î2 < 0.4 n < 0.4 fi 15 A 9 .3 A

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2