DIODE S405 Search Results

DIODE S405 Result Highlights (5)

Part	Manufacturer	Description
CEZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, ESC
CUZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, USC
CEZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, ESC
CUZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, USC
CUZ30V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC

DIODE S405 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
smd marking code sot-23 infineon Abstract: SM 226 6V Contextual Info: BSS670S2L OptiMOS Power-Transistor Product Summary Feature 55 VDS N-Channel Enhancement mode Logic Level V RDS on 650 m ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified	Original	BSS670S2L BSS670S2L Q67042-S4052 smd marking code sot-23 infineon SM 226 6V	PDF
RG130 Abstract: smd marking code sot-23 infineon BSS670S2L Q67042-S4052 Contextual Info: BSS670S2L Final data OptiMOS=Small-Signal-Transistor Product Summary Feature N-Channel VDS Enhancement mode R DS on 650 m Logic Level ID 0.54 A 55 V SOT-23 3 2 1 VPS05161 Drain pin 3 Type BSS670S2L Package SOT-23 Ordering Code Q67042-S4052 Gate pin1	Original	BSS670S2L OT-23 VPS05161 Q67042-S4052 RG130 smd marking code sot-23 infineon BSS670S2L Q67042-S4052	PDF
BSS670S2L Abstract: smd marking code sot-23 infineon marking BSs q67042-s4052 marking BSs sot-23 Contextual Info: BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS on 650 mΩ •Logic Level ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source	Original	BSS670S2L Q67042-S4052 BSS670S2L smd marking code sot-23 infineon marking BSs q67042-s4052 marking BSs sot-23	PDF
Q67042-S4052 Contextual Info: BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS on 650 mΩ •Logic Level ID 0.54 A PG-SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L PG-SOT 23 Q67042-S4052 BSs Gate pin1 Source	Original	BSS670S2L BSS670S2L Q67042-S4052 Q67042-S4052	PDF
SUD17N25-165 Abstract: 40578 Contextual Info: SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 APPLICATIONS D Automotive such as − Diesel Fuel Injection	Original	SUD17N25-165 O-252 SUD17N25-165--E3 S-40578--Rev. 29-Mar-04 SUD17N25-165 40578	PDF
Si3983DV Abstract: Si3983DV-T1 Contextual Info: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel	Original	Si3983DV Si3983DV-T1--E3 S-40575--Rev. 29-Mar-04 Si3983DV-T1	PDF
Si3991DV Abstract: 72427 Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS	Original	Si3991DV Si3991DV-T1--E3 S-40575--Rev. 29-Mar-04 72427	PDF
Si3433BDV Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D	Original	Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 S-40575--Rev. 29-Mar-04 Si3433BDV-T1-E3	PDF
40573 Abstract: SUD50N03-09P S-40573-Rev Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters	Original	SUD50N03-09P O-252 SUD50N03-09P--E3 Avalanch75 S-40573--Rev. 29-Mar-04 40573 SUD50N03-09P S-40573-Rev	PDF
Si3993DV Abstract: 72320 Si3993DV-T1 si3993dv-t1-e3 Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices	Original	Si3993DV Si3993DV-T1 Si3993DV-T1--E3 S-40575--Rev. 29-Mar-04 72320 si3993dv-t1-e3	PDF
Si3981DV Abstract: 7250.2 Contextual Info: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS	Original	Si3981DV Si3981DV-T1--E3 -20Duty S-40575--Rev. 29-Mar-04 7250.2	PDF
mar 735 Abstract: 40578 SUD17N25-165 Contextual Info: SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 APPLICATIONS D Automotive such as − Diesel Fuel Injection	Original	SUD17N25-165 O-252 SUD17N25-165--E3 08-Apr-05 mar 735 40578 SUD17N25-165	PDF
Si3981DV Contextual Info: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS	Original	Si3981DV Si3981DV-T1--E3 -20ed 08-Apr-05	PDF
40575 Abstract: SI3993DV SI3993DV-T1 Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices	Original	Si3993DV Si3993DV-T1 Si3993DV-T1--E3 08-Apr-05 40575	PDF

Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS	Original	Si3991DV Si3991DV-T1--E3 08-Apr-05	PDF
Si3433BDV Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D	Original	Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 08-Apr-05 Si3433BDV-T1-E3 SI3433B	PDF
S-40573-Rev Abstract: 40573 Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters	Original	SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P--E3 08-Apr-05 S-40573-Rev 40573	PDF
SI3433BDV Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D	Original	Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 18-Jul-08	PDF
Si3983DV Abstract: Si3983DV-T1 Contextual Info: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel	Original	Si3983DV Si3983DV-T1--E3 18-Jul-08 Si3983DV-T1	PDF
Si3981DV Contextual Info: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS	Original	Si3981DV Si3981DV-T1--E3 -20lectual 18-Jul-08	PDF
54V4 Abstract: Si3993DV Si3993DV-T1 Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices	Original	Si3993DV Si3993DV-T1 Si3993DV-T1--E3 18-Jul-08 54V4	PDF
Si3991DV Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS	Original	Si3991DV Si3991DV-T1--E3 18-Jul-08	PDF
SI4483EDY Contextual Info: Si4483EDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET D ESD Protection: 3000 V rDS(on) (W) ID (A) 0.0085 @ VGS = −10 V −14 APPLICATIONS 0.014 @ VGS = −4.5 V −11 D Notebook PC	Original	Si4483EDY Si4483EDY--E3 Si4483EDY-T1--E3 S-40580--Rev. 29-Mar-04	PDF
S-40570 Abstract: Si7458DP Si7458DP-T1 Contextual Info: Si7458DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 4.5 V 22 0.0075 @ VGS = 2.5 V 19 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile	Original	Si7458DP 07-mm Si7458DP-T1 S-40570--Rev. 29-Mar-04 S-40570	PDF

DIODE S405 Search Results

DIODE S405 Result Highlights (5)

DIODE S405 Datasheets Context Search

smd marking code sot-23 infineon

RG130

BSS670S2L

Q67042-S4052

SUD17N25-165

Si3983DV

Si3991DV

Si3433BDV

40573

Si3993DV

Si3981DV

mar 735

Si3981DV

40575

Si3433BDV

S-40573-Rev

SI3433BDV

Si3983DV

Si3981DV

54V4

Si3991DV

SI4483EDY

S-40570