DIODE S51 Search Results

S10045

Abstract: violet laser diode chip
Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its

Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its

S10045

Contextual Info: PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times

Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times higher than that

S5104

Abstract: s510 datasheet S510 SK52 SK53 SK54 SK55 SK56 SK58 s510 marking
Contextual Info: SK52 – S510 WTE POWER SEMICONDUCTORS Pb 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak For Use in Low Voltage Application

Contextual Info: SK52 – S510 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 125A Peak

Contextual Info: SK52 – S510 WTE POWER SEMICONDUCTORS Pb 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip       Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak For Use in Low Voltage Application

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: 1SS404 Silicon Epitaxial Planar Diode SOD-323 Features — Small surface mounting type. — High speed. — High reliability with high surge current handing capability Applications — High speed switching Dimensions in inches and millimeters Ordering Information

Contextual Info: M-808-CS-025W -950 Description: 808nm, high brightness, high reliability, multimode laser diode with 25 W output from 1000um aperture. Fiber coupled modules are available soon. Applications: Pumping source, medical, commercial printing, free space communication, material processing,

DIODE S51

Abstract: SOD323 Package footprint 1SS404 MARKING TA SOD323 DIODE marking A SOD323 h 027
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1SS404 FEATURES Pb z Small surface mounting type. z High speed. z High reliability with high surge current handing capability Lead-free APPLICATIONS z SOD-323 High speed switching

5070d

Abstract: S-5031C S-5031A1 S-5071A1 5131A 5130c side 5150c rotary coded switch 16 positions resistor 3.3k S-5010C
Contextual Info: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range Storage Temp. Range Sealing Method Electrical Contact Rating Non-Switching Switching Contact Resistance Insulation Resistance

Contextual Info: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 @ VGS = –4.5 V –6.3 • Ultra–Low Thermal Resistance, PowerPAK®

Si7705DN

Contextual Info: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 @ VGS = –4.5 V –6.3 • Ultra–Low Thermal Resistance, PowerPAK®

Contextual Info: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 at VGS = – 4.5 V – 6.3 • Ultra–Low Thermal Resistance, PowerPAK®

Si7705DN

Abstract: Si7705DN-T1
Contextual Info: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 at VGS = – 4.5 V – 6.3 • Ultra–Low Thermal Resistance, PowerPAK®

si4812b

Abstract: Si4812BDY
Contextual Info: SPICE Device Model Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4736DY

Contextual Info: SPICE Device Model Si4736DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4832DY

Contextual Info: SPICE Device Model Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

73373

Abstract: ic 73373
Contextual Info: SiP41108 New Product Vishay Siliconix Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES D D D D D D D D D APPLICATIONS 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal Bootstrap Diode

DIODE S5

Abstract: s501 diode
Contextual Info: Model S-5000 Dip Rotary Code Switch W / Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range : -25°C T O +75°C Storage Temp. Range : -25°C T O +75°C Sealing Method : O Ring Sealed Electrical Contact Rating Non-Switching

Si4832DY

Contextual Info: SPICE Device Model Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4736DY

Contextual Info: SPICE Device Model Si4736DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiP41108

Abstract: TSSOP-16
Contextual Info: SiP41108 New Product Vishay Siliconix Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES D D D D D D D D D APPLICATIONS 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal Bootstrap Diode