DIODE S526 Search Results
DIODE S526 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE S526 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 at VGS = 10 V 84b 0.0095 at VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175 _C Junction Temperature D Optimized for Low-Side Synchronous Rectifier |
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SUD50N03-06P O-252 SUD50N03-06P 08-Apr-05 | |
SUD50N03-06PContextual Info: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 at VGS = 10 V 84b 0.0095 at VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175 _C Junction Temperature D Optimized for Low-Side Synchronous Rectifier |
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SUD50N03-06P O-252 SUD50N03-06P 25lectual 18-Jul-08 | |
Si4920DY
Abstract: SI4920DY-T1
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Si4920DY Drain250 S-52637--Rev. 02-Jan-06 SI4920DY-T1 | |
SI4920DYContextual Info: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.025 at VGS = 10 V "6.9 0.035 at VGS = 4.5 V "5.8 D TrenchFETr Power MOSFETs D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 |
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Si4920DY 08-Apr-05 | |
Si4966DYContextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 |
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Si4966DY 08-Apr-05 | |
SI4920DYContextual Info: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.025 at VGS = 10 V "6.9 0.035 at VGS = 4.5 V "5.8 D TrenchFETr Power MOSFETs D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 |
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Si4920DY 18-Jul-08 | |
283 diode
Abstract: TP0202K
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TP0202K S-52635Rev. 02-Jan-06 283 diode TP0202K | |
si4686dy
Abstract: SI4686
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Si4686DY S-52631Rev. 02-Jan-06 SI4686 | |
SUM55P06-19LContextual Info: SPICE Device Model SUM55P06-19L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUM55P06-19L S-52635Rev. 02-Jan-06 SUM55P06-19L | |
SUB65P06-20Contextual Info: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUP/SUB65P06-20 S-52635Rev. 02-Jan-06 SUB65P06-20 | |
Si1499DH
Abstract: SPICE PARAMETER V727
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Si1499DH S-52633Rev. 02-Jan-06 SPICE PARAMETER V727 | |
SUD19P06-60LContextual Info: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUD19P06-60L S-52635Rev. 02-Jan-06 SUD19P06-60L | |
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Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 |
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Si4966DY 18-Jul-08 | |
SUP90P06-09LContextual Info: SPICE Device Model SUP90P06-09L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUP90P06-09L capacita255 S-52635Rev. 02-Jan-06 SUP90P06-09L | |
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Contextual Info: Si7904DN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • TrenchFET Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK® |
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Si7904DN 07-mm Si7904DN-T1 08-Apr-05 | |
TP0202KContextual Info: SPICE Device Model TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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TP0202K 18-Jul-08 TP0202K | |
Si1499DHContextual Info: SPICE Device Model Si1499DH Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si1499DH 18-Jul-08 | |
TP0610KContextual Info: SPICE Device Model TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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TP0610K 18-Jul-08 TP0610K | |
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Contextual Info: SPICE Device Model Si7447ADP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7447ADP 18-Jul-08 | |
Si4686DY
Abstract: SI4686
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Si4686DY 18-Jul-08 SI4686 | |
Si5479DUContextual Info: SPICE Device Model Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si5479DU 18-Jul-08 | |
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Contextual Info: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUP/SUB65P06-20 18-Jul-08 | |
SUP90P06-09LContextual Info: SPICE Device Model SUP90P06-09L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
SUP90P06-09L 18-Jul-08 SUP90P06-09L | |
SUM110P04-04LContextual Info: SPICE Device Model SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUM110P04-04L 18-Jul-08 SUM110P04-04L | |