DIODE S6 28 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD103AW-SD103CW SOD-123 SCHOTTKY DIODES FEATURES MARKING: SD103AW: S4 SD103BW: S5 SD103CW: S6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD103AWS-SD103CWS SOD-323 SCHOTTKY DIODES FEATURES MARKING: SD103AW: S4 SD103BW: S5 SD103CW: S6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter

SD103AW

Abstract: SD103BW SD103CW continental SOD123 103CW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

diode S6 39

Abstract: APTC80TDU15P
Contextual Info: APTC80TDU15P Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G3 G1 G5 S3 S1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 S5

APT0502

Abstract: APTC80TDU15PG
Contextual Info: APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1 /S2 D2 S1 D5 G3 S3/S4

si24

Abstract: diode 513 S5
Contextual Info: A N A LO G D E V IC E S CMOS 8- and 16-Channel Analog Multiplexers AD7506/AD7507 FUNCTIONAL DIAGRAMS FEATURES Ron ! 3001Ì Power Dissipation: 1.5mW TTL/DTL/CMOS Direct Interface Break-Before-Make Switching Standard 28-Pin DIPs and 28-Terminal Surface Mount Packages

FTC 276

Abstract: SAA7370A TZA1015 TZA1015T saa7348
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

Optical pickup OEIC

Abstract: SAA7370A TZA1015 TZA1015T saa7348 laser diode philips cd
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

Contextual Info: Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ

S6 diode

Abstract: diode S6 diode s6 28 DIODE T25 DIODE T25 4 DIODE T25 4 do diode S62 DIODE S6 67
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ

Contextual Info: M74HC4514 M74HC4515 SGS-THOMSON iy HC4514:4 TO 16 LINE DECODER/LATCH HC4515: 4 TO 16 LINE DECODER LATCH INV. HIGHSPEED tpD = 18 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Icc = 4 nA (MAX.) AT Ta = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.)

3RH1921

Abstract: 3RH1911-1FA22 3RA1954-2A 3RH1911-1GA22 3RT1926 3rh1921-1 3RH1921-1EA 3RH1921-1CD01 3RH19 21 3RT107
Contextual Info: 3RT1 contactors/3RH1 control relays 3.4 Accessories Accessories for frame size S00 The accessories for contactors that switch motors and for control relays are of the same type. The accessories are attached at the front. Accessories for frame sizes S0 to S3

S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

pin diagram of ic 4515

Abstract: HC4514 d 4515 transistor d 4515 HC4515 P043A 16 line to 4 multiplexer IC 74HC4514 16-LINE 74HC4515
Contextual Info: M74HC4514 M74HC4515 HC4514: 4 TO 16 LINE DECODER/LATCH HC4515: 4 TO 16 LINE DECODER LATCH INV. . . . . . . . . HIGH SPEED tPD = 18 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.)

Contextual Info: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS

smd diode code mj

Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode code SL

Abstract: smd diode code mj
Contextual Info: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20

Contextual Info: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS

APT0502

Abstract: APTM10TDUM09PG diode "S6 95"
Contextual Info: APTM10TDUM09PG Triple dual common source MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance

DIODE S4 72A

Abstract: diode S6 72A S4 72A diode 748 36A APTC60TDUM35P diode 513 S5
Contextual Info: APTC60TDUM35P Triple dual Common Source Super Junction MOSFET Power Module D3 G1 G3 S1 S3 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 G5 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 •

DIODE S6 74

Abstract: DIODE S4 74 APTM20TDUM16P DIODE S4 66
Contextual Info: APTM20TDUM16P Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APTM10TDUM09P

Contextual Info: APTM10TDUM09P Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APTM10TDUM19P

Contextual Info: APTM10TDUM19P Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated