DIODE SB 5400 Search Results

zener diode 15 v

Abstract: ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY
Contextual Info: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V

d312

Abstract: SD5000I AN301 SD5000N SD5001N SD5400CY SD5401CY SD5000 SD5401
Contextual Info: SD5000/5400 Series Siliconix NĆChannel Lateral DMOS FETs SD5000I SD5000N SD5001N Product Summary Part Number V BR DS Min (V) SD5400CY SD5401CY VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V

sd5000

Abstract: SD5000N SD5400CY SD5401 sst211 sot-143 SD5000I SD5001N SD5401CY SD5000 SILICONIX
Contextual Info: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V

SD5000N

Abstract: SD5000 SD5000I SD5001N SD5400CY SD5401CY #70607 SD5400
Contextual Info: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V

diode sb 5400

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33KL2C_B5 VorläufigeDaten PreliminaryData Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage

diode sb 5400

Abstract: sb 5400
Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1200S33KL2C_B5 暫定データ PreliminaryData Diodeインバータ/Diode,Inverter 最大定格/MaximumRatedValues ピーク繰返し逆電圧

IEC61140

Abstract: 10 kw igbt inverter sb 5400 DD1200S33KL2C_B5 IRF 810
Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33KL2C_B5 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C

aeg vde 0435

Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Contextual Info: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules

ABSTRACT FOR REMOTE OPERATED MASTER SWITCH

Abstract: SLUA128A EBV Elektronik intel gerber HPA027A
Contextual Info: UCC29002 UCC39002 SLUS495C − SEPTEMBER 2001 − REVISED JULY 2003 ADVANCED 8ĆPIN LOADĆSHARE CONTROLLER FEATURES D High Accuracy, Better Than 1% CurrentShare D D D D D D D D D DESCRIPTION The UCC39002 is an advanced, high performance and low cost loadshare controller that provides all

SST211

Abstract: SST215 SD215DE SD211 SD211DE SD213DE SD214 SST213 D5 marking array-SD5000
Contextual Info: SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V

sd5400cy

Abstract: 5401CY 5400CY G31E sd211de
Contextual Info: B E S ffA SD5400 SERIES N-Channel Lateral DMOS Quad FETs The Siliconix SD5400 series is a monolithic array of single-pole, single-throw analog switches designed for high-speed switching In audio, video and high frequency applications in communications, instrumentation, and process control. Designed with

SD 214DE siliconix

Abstract: diode sb 5400
Contextual Info: Tem ic SD210DE/214DE S e m i c o n d u c t o r s N-Channel Lateral DMOS FETs Product Summary P art Number V BR DsMin(V) VGSfth) Max (V) r DS(on) Max (Q) Cr« Max (pF) toN Max (ns) SD 210DE 30 1.5 45 @ V GS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS - 10 V 0.5 2

lm13700n

Contextual Info: LM13700 www.ti.com SNOSBW2D – MAY 2004 – REVISED SEPTEMBER 2004 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES APPLICATIONS • • • • • • • • • • • • •

D214D

Contextual Info: Tem ic srnççmx_ SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary P a r t N u m b er V br Ds M i» (V) VGS(th) M a* (V) ri)S(on) M ax (Q ) p r ss M ax (p F ) toN M ax (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE

SD210DE

Abstract: SD210 SST211 SD214DE #70607
Contextual Info: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D

SD214DE

Abstract: SD5000 quad ultra low igss pA SD210DE
Contextual Info: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D

SILICONIX SD21

Abstract: ST211 sst211 sot-143 SST211 SD 214DE siliconix SST213 213D to253 SST215 SILICONIX CD+Laser+pickup+kss+213D
Contextual Info: T e m ic SD211DE/SST211 Series Siliconix N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary P a rt N u m b er V br DS M in (V) VGS(th) M ax (V) «•DS(on) M ax (Q ) e « « M a x (p F ) toN M a x (n s) SD211DE 30 1.5

LM13700 application note

Abstract: lm13700 four-quadrant multiplier
Contextual Info: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current

Contextual Info: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current

Contextual Info: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current

LM13700 application note

Abstract: LM13700 lm13700n
Contextual Info: LM13700 www.ti.com SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers Check for Samples: LM13700 FEATURES DESCRIPTION • • • • • • The LM13700 series consists of two current

AN301

Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Contextual Info: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10

CSD17556

Contextual Info: CSD17556Q5B www.ti.com SLPS392 – MARCH 2013 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17556Q5B PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

CSD17556

Contextual Info: CSD17556Q5B www.ti.com SLPS392 – MARCH 2013 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17556Q5B PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd