DIODE SCHOTTKY 16A Search Results

Contextual Info: PD -95437 IRF7526D1PbF l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Description FETKY TM MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4 5

marking code SM 96 diode

Abstract: IRF7501
Contextual Info: PD -95437 IRF7526D1PbF l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Description FETKY TM MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4 5

IRF6894

Abstract: IRF6894MTR1PBF
Contextual Info: PD - 97633 IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm)

Contextual Info: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible 

IRF6894

Contextual Info: PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm)

Contextual Info: PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm)

Germanium DO-35 DIODE

Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
Contextual Info: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster

GD 08 Rectifiers

Abstract: marking code YW DIODE HEXFET SO-8 EIA-541 IRF7501
Contextual Info: PD- 95434 IRF7523D1PbF l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free FETKYä MOSFET / Schottky Diode A A S G 1 8 K 2 7 K 3 6 4 5 D D VDSS = 30V

TYN616

Abstract: 100-6 scr Transistor 2p4m SCR 2P4M
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

transistors C106

Abstract: TO202 package transistor 2p4m
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)

Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)

Contextual Info: hwar Back To Schottky Rectifiers NS4202SCT POWER RECTIFIERS • • • • • SCHOTTKY BARRIER RECTIFIERS Schottky Diode - C enter Tap Low F orw ard Voltage (0.64 max @ 16A M atched Dual Die C onstruction (15A per leg) Epitaxial C onstruction 150°C O perating T em perature

HAT2126RP

Contextual Info: HAT2126RP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching ADE-208-1576D Z 5th. Edition Dec. 2002 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode

IRF8302M

Contextual Info: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

Contextual Info: PD - 96229 IRF6729MPbF IRF6729MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

IRF8302M

Abstract: IRF8302MTRP
Contextual Info: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

Contextual Info: PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V

irf6798MTR1PBF

Abstract: IRF6798MPbF IRF6798MTRPbF
Contextual Info: PD - 97433B IRF6798MPbF IRF6798MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V

Contextual Info: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V

60mH inductor

Abstract: IRF6795MTR1PBF IRF6795MTRPBF
Contextual Info: PD - 97321 IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V

Contextual Info: PD - 96371A IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V

Contextual Info: PD - 97433B IRF6798MPbF IRF6798MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V

Contextual Info: PD - 96371B IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V