DIODE SCHOTTKY 1N5819 Search Results

SK-0028A

Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

1N5819 SOD-123

Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE  FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling

1N5819* diode

Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE „ FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling

1n5819 melf

Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
Contextual Info: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise

1N5819 sensitron

Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

1N5819UR-1

Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.

1N5819-1 JAN

Abstract: 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR-1 1N5819UR1 JANTXV
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.

diode 1N5819

Contextual Info: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage:  30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low

1.1N5819

Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
Contextual Info: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

5819-1

Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
Contextual Info: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

Schottky diode Die

Abstract: "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet
Contextual Info: PROCESS CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY

1N5819

Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Contextual Info: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

1N5819/50SQ100

Contextual Info: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE

Contextual Info: 1N5817 – 1N5819 1.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip     Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency

diode 1N5819

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:

1N5819

Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage

sot-23 Marking sj

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40

1N5819W

Abstract: SOD-123 JEDEC marking code sr marking "SR"
Contextual Info: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: PINNING ˙ Schottky Barrier Chip PIN ˙ Guard Ring Die Construction for Transient Protection ˙ Low Power Loss, High Efficiency ˙ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 SR ˙ High Current Capability and Low Forward Voltage Drop

1N5819* diode

Abstract: 1N5819W
Contextual Info: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: PINNING ˙ Schottky Barrier Chip PIN ˙ Guard Ring Die Construction for Transient Protection ˙ Low Power Loss, High Efficiency ˙ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 SR ˙ High Current Capability and Low Forward Voltage Drop

1N5819W

Contextual Info: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING Features: ․ Schottky Barrier Chip PIN ․ Guard Ring Die Construction for Transient Protection ․ Low Power Loss, High Efficiency ․ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 ․ High Current Capability and Low Forward Voltage Drop

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148