DIODE SJ 03 Search Results
DIODE SJ 03 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE SJ 03 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Sj Schottky RectifierContextual Info: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • |
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1N6660, 1N6660R SJ6660, SX6660 SV6660 Sj Schottky Rectifier | |
1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
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1N4464 1N4494 1N4464US 1N4494US 1N4475 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479 | |
d 5072 transistor
Abstract: d 5072 1N6171AUS
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1N6138A/US 1N6173A/US 1N6138A/US 1N6139A/US 1N6140A/US 1N6141A/US 1N6142A/US 1N6143A/US 1N6144A/US 1N6145A/US d 5072 transistor d 5072 1N6171AUS | |
Contextual Info: E R E 2 4 - 0 6 • E R E 7 4 - 0 6 3 o a •6 0 0 V • Outline Drawings FAST RECOVERY DIODE : Features <i"<—î/a 'sj-'y y • Glass passivated chip High reverse voltage capability Stud mounted • Applications • • • Switching power supplies Free-wheel diode |
OCR Scan |
l95t/R89 | |
C 5074 transistorContextual Info: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C |
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1N6102A/US 1N6137A/US 1N6102A/US 1N6103A/US 1N6104A/US 1N6105A/US 1N6106A/US 1N6107A/US 1N6108A/US 1N6109A/US C 5074 transistor | |
1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
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1N4464 1N4494 1N4464US 1N4494US 1N4464/US 1N4465/US 1N4466/US 1N4467/US 1N4468/US 1N4469/US 1N4465 1N4475 1N4474 1N4494 1N4494US SN63 zener diode 1N4464 1N4477 | |
c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
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ERC81-004 e18-ts 95t/R89 Shl50 c81-004 c81 004 Diode C81 004 C81004 ERC81 T151 T460 T810 T930 | |
Contextual Info: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W |
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1N6108A 1N6136A MIL-PRF-19500/516 1N6108A/US 1N6109A/UStasheet | |
Contextual Info: RF2140 9 '&6 32: 5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • 3V DCS1900 (PCS) Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • 3V DCS1800 (PCN) Cellular Handsets |
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RF2140 DCS1800 DCS1900 RF2140 DCS1800/1900 1700MHz 2000MHz 10dB/5W | |
diode marking SJ
Abstract: JESD22
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IPW65R070C6 diode marking SJ JESD22 | |
65C6070
Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
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IPW65R070C6 726-IPW65R070C6 65C6070 infineon MOSFET parameter test diode marking SJ 65C6 ipw65r | |
6r041c6
Abstract: IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc
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IPW60R041C6 6r041c6 IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc | |
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, |
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IPW65R070C6 | |
Contextual Info: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ |
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100GB176D | |
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6R190E6Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6 |
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IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 | |
6R190E6
Abstract: IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING
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IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING | |
6R190E6
Abstract: TO-247 FULLPAK Package IPA60R190E6 IPP60R190E6 IPW60R190E6 JESD22 6r190 6r190e
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IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 TO-247 FULLPAK Package IPA60R190E6 IPP60R190E6 IPW60R190E6 JESD22 6r190 6r190e | |
6R190E6
Abstract: 6R19 6r190 6r190e IPA60R190E6 IPA60R190 IPP60R190E6 IPW60R190E6 JESD22
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IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 6R19 6r190 6r190e IPA60R190E6 IPA60R190 IPP60R190E6 IPW60R190E6 JESD22 | |
6r950c6
Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
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IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 726-IPB60R950C6 IPB60R950C6 6r950c6 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950 | |
6R950C6
Abstract: IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 infineon marking TO-252 IPx60R950C6 TRANSISTOR SMD MARKING g1
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IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6R950C6 IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 infineon marking TO-252 IPx60R950C6 TRANSISTOR SMD MARKING g1 | |
6r950c6
Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
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IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950 | |
6R950C6Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2.2, 2010-03-11 2013-07-31 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 |
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IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6R950C6 | |
6r950c6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 transistor 600v IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 to220 pcb footprint
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IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 MOSFET TRANSISTOR SMD MARKING CODE 11 transistor 600v IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 to220 pcb footprint | |
6r950c6
Abstract: 6R950
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IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 6R950 |