DIODE SM 6A Search Results

6ar7gt

Abstract: diode Mo 6AR7 heater
Contextual Info: .6AR7-GT DUO-DIODE PENTODE REMOTÉ CUT-OFF TYPE aem&sm Electrical: Heater» for Onlpotentlal Cathode: Volt&ge 6.3 Current 0.3 Direct Interelectrode Grid So.1 to Plate Input Output Diode No.1 to Diode No.1 to Diode No.2 to a.c.or d.c. volts aap. Capacitances: 1

405nm diode

Abstract: 405nm Laser 405nm
Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.03W-S Key Features： Š 30mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

405nm Laser 5 mw

Abstract: 405nm 650NM laser diode 20mw 405nm 20mW laser diode 405nm 405nm Laser 15 mw
Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.02W-S Key Features： Š 20mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.02W-S Key Features： Š 20mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm HHL Packaged SM Diode Laser K41S06F-0.10W Key Features： Š 405nm wavelength Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm HHL Packaged SM Diode Laser K41S06F-0.10W Key Features： Š 405nm wavelength Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.03W-S Key Features： Š 30mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijin g’s High Power Diode Laser Modules are manufactured b y

R604A

Abstract: R606A 2RI60E-060 R605A
Contextual Info: DIODE MODULES Ratings and Specifications H 600 volts class general use diode modules/E series V 8RI30E-060 6RI50E-060 fcftttæ-oeo 6RnooE-oeo 6RM50E-Û60 2RI60E-060 2RI100E-060 2RI150E-060 2RI250E-060 * rrm V r sm Volts Volts 600 600 600 660 660 lo Amps. Package

Contextual Info: 660nm Coaxial Packaged SM Diode Laser K66S03F-0.005W-S K66S03F-0.03W-S K66S03F-0.05W-S Key Features： Š 5-50mW output power Š 4µm fiber core diameter Š 0.13NA Š 660nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

21Z8

Abstract: 331Z 221Z
Contextual Info: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 1Z6.21Z390 1Z6.8A1Z30A APPLICATIONS: • CONSTANT VOLTAGE REGULATION • TRANSIENT SUPPRESSORS FEATURES: • Average Power Dissipation : P=1W • Peak Reverse Power Dissipation : P r SM=200W at tw=200ys • Zener Voltage

Contextual Info: 660nm HHL Packaged SM Diode Laser K66S06F-0.050W-S K66S06F-0.080W-S Key Features： Š 660nm wavelength Š 50mW, 80mW output power Š 4µm fiber core diameter Š 0.13NA Š Singlemode Fiber Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 635nm Coaxial Packaged SM Diode Laser K63S03F-0.001W-S K63S03F-0.002W-S K63S03F-0.01W-S K63S03F-0.02W-S Key Features： Š 1-20mW output power Š 4µm fiber core diameter Š 0.13NA Š 635nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

131-G W J 60

Abstract: smd Marking OU smd marking m4 diode smd k9 DIODE mark k9 M2FM3 max5536
Contextual Info: Schottky Barrier Diode wnnw OUTLINE Single Diode M2FM3 U n it t m m Package : M2F W e ig h t 0.072# T y p 1 ) '/ — K 30V 6A v—9 Feature a — w — : • /J ^ S M D • Sm all S M D • V f=0.46V • filR=0.2mA • Low V f =0 .4 6 V • • Reverse connect protection for

h51 diode

Abstract: SHINDENGEN DIODE
Contextual Info: y'U y v K Bridge Diode Single In-line Package IW f ê ^ - â ia D6SB OUTLINE DIMENSIONS C ase : 5S 800V 6A •*3 üsip ; W • S iB E E , S I $— y I sm • g»SÏ«* iK • S R S iS m m n. oa. m • a « , a s . • Æ tè Ü fa RATINGS Absolute Maximum Ratings

KJE 6A

Abstract: KJE 6w SHINDENGEN DIODE DIODE d5sb
Contextual Info: z ru Bridge Diode y > 9 ' J K >~p-K Single In-line Package o u t l in e d i m e n s io n s D5SB Case : 5S 600V 6A •1 3 ^ • » S !S IP n ^ ir - y •B H Œ , S I f sm • g * t * 8 * J S ffl i f • sr s 9m m . OA. BW •a « , a«, • Ë të ü fa

SHINDENGEN DIODE

Abstract: 6SB60
Contextual Info: 7 'U r W i - K 7O S Bridge Diode S in g le I n - lin e P a cka g e OUTLINE DIMENSIONS U6SB 600V 6A « m • « æ s ip •U L K B J U L File No.E 14 2 4 2 2 • S iR E E , • S I F-SM g ftH R iffE i m a •S F IW Ü • * s . OA. ssœ •a s . mm. f a • Æ të H

6AL5

Abstract: RL 1962 h 48 diode
Contextual Info: 5726 - TUNB-SOi — DOUBLE DIODE MINIATURE TYPE COATED UN IPOTENTIAL CATHODE HEATER 6.3 VOLTS 300 MA. AC OR DC ANY MOUNTING POSITION BASING 0 tAG RAM JEDEC 6BT SM A L L B U T T O N M I N I A T U R E 7 PIN B A SE E7-1 O U T L I N E DR AW IN G O E D E C 5-1

MARKING 358 945A

Abstract: colour code diode zener MARKING 945A zener color codes Zener diode wz 140 colour code zener Zener diode wz 130 MARKING 2S SMA 927a A 928A
Contextual Info: TAIWAN SEMICONDUCTOR % 1S M A 5926 - 1S M A 5956 1.5 Watts Surface Mount Silicon Zener Diode SM A/DO-21 AAC tò RoHS C O M P L IA N C E F e a tu re s III*[f KM IK^-' l!Ki F o r su rfa ce m o u n te d a p p lic a tio n s in o rd e r to o p tim iz e b o a rd space

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 600W SURFACE MOUNT TVS DIODES / D0214AA CASE 3 600W -6aif TYPE TFMBJ5.0 TFMBJ5.0A TFMBJ6.0 TFMBJ6.0A TFMBJ6.5 TFMBJ6.5A TFMBJ7.0 TFMBJ7.0A TFMBJ7.5 TFMBJ7.5A TFMBJ8.0 TFMBJ8.0A TFMBJ8.5 TFMBJ8.5A TFMBJ9.0 TFMBJ9.0A TFMBJ10

Contextual Info: SCS-THOMSON VN02N M HIGH SIDE SM AR T PO W ER SOLID STATE RELAY TYPE VN02N V dss FtoS on l0UT Vcc 60 V 0.4 n 6 A 26 V • OUTPUT CURRENT (CONTINUOUS): 6A@ Tc=25°C . 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN . OPEN DRAIN DIAGNOSTIC OUTPUT

diode lt 316

Abstract: marking u4 diode
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF6LD60M 600V 6A Feature • raffittì FRD • f i Vf= 1.65V • High Voltage Super FRD • 7 / IÆ - J I/ ^ • Full Molded • Œ ï i H Œ 2kV S I I • Dielectric Strength 2kV • Low V f=1 .65V Main Use • Switching Regulator

L06B

Contextual Info: SCHOTTKY BARRIER DIODE IclSSSSIf 6A/30V FEATURES O T 0 -2 5 1 A A C a se : EC L06B 03 o T O -2 5 2 A A C a s e : E C L 06B 03F S u rf a c e M o u n tin g D ev ice P a c k a g e d in 16m m T a p e a n d R eel O D u a l D io d e s —C a th o d e C o m m o n

APM9968CO

Abstract: STD-020C marking code 3c diode sm
Contextual Info: APM9968CO Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • • Reliable and Rugged TSSOP-8 Packages

Contextual Info: K2P005ii-27-.r> O K I electronic components OCM2D6, 2 7 SERIES_ General-purpose Type Optical MOS Relay For AC/DC Load GENERAL DESCRIPTION TheO C M X 6and O C M 2" T S e rie sare optical M OS relays for A C /D C load that are lower in cost than the O C M 2T X /2~'l Series. The input portion is an infrared light emitting diode. The output portion