DIODE SMD MARKING VD Search Results

Contextual Info: BAV70W-WS PB FREE PRODUCT DUAL SWITCHING DIODE FEATURE ƽ Small plastic SMD package. ƽ For high-speed switching applications. • We declare that the material of product ƽ compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device

smd diode marking a6

Abstract: SMD DIODE DEVICE marking R LBAS16HT1G SMD y14 LBAS16HT1 SMD DIODE A6 t DIODE smd marking uh
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16HT1 FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode code g3

Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode S6

Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

SMD MARKING QG 6 PIN

Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode S4

Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode g6

Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode S4

Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

DIODE SMD T25

Abstract: 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0V RoHS Device Features SOT-23-6L ESD Protect for Transition Minimized Differential 0.140 2.90 BSC. Signaling(TMDS) Channels. Protect four I/O lines and one VDD line 0.063(1.60) BSC. 0.110(2.80)BSC. IEC61000-4-2 (ESD) ±8kV(Contact) ,±15kV(Air).

N019I

Abstract: 6/18/smd diode A8
Contextual Info: MOSFET SMD Type P-Channel MOSFET KO3423 SOT-23-3 • Features Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -20V 0.4 3 1 0.55 ● RDS(ON) ＜ 150mΩ (VGS = -2.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) ＜ 100mΩ (VGS = -4.5V) 2 +0.1 0.95-0.1 +0.2 1.9-0.2

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1

Contextual Info: Diodes SMD Type General Purpose PIN Diode MMBV3401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 0.34Ω Typ @ IF = 10 mAdc 1 0.55 ● Very Low Series Resistance at 100 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Capacitance ? 0.7 pF (Typ) at V R = 20 Vdc

mosfet marking kf

Abstract: ic MARKING QG Marking Symbol KF KI1304BDL smd marking TB
Contextual Info: Transistors IC SMD Type N-Channel 30-V D-S MOSFET KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90

A5SHB

Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2305 DS SOT-23-3 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features ● VDS V = -8V ● RDS(ON)＜0.108 Ω (VGS = -1.8V) 1 D 0.55 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜0.052 Ω (VGS = -4.5V)

Contextual Info: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1

ID09

Contextual Info: Transistors IC MOSFET SMD Type Product specification KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90

a5shb

Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2305 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜0.250 Ω (VGS = -1.8V) 0.55 ● RDS(ON)＜0.100 Ω (VGS = -2.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON)＜0.065 Ω (VGS = -4.5V) 0.4 3 ● VDS (V) = -20V

A18E smd

Abstract: A18E
Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings