DIODE SMD SJ 39 Search Results

sj 2025

Abstract: CAP SMD X7R 100NF 50V 10 ic sj 2025 ak300/2 Diode SMD SJ 19 0603 100nF/50V avx Diode SMD SJ 24 Diode SMD SJ 7 SMD TRANSISTOR R90 TRANSISTOR ECG 69
Contextual Info: Freescale Semiconductor User’s Guide Document Number: KT33730UG Rev. 1.0, 9/2009 KIT33730EKEVBE Evaluation Board Figure 1. KIT33730EKEVBE Evaluation Board Table of Contents 1 Kit Contents / Packing List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R420E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R420E6 1Description ThinPAK8x8

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

65E6280

Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6

6r125c6

Abstract: 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPP60R125C6 IPW60R125C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6

1N3064

Abstract: 54LS242
Contextual Info: M Military 54LS242 M O TO R O LA Quad Bus Transceivers With 3-State Outputs ELECTRICALLY TESTED PER: MIL-M-38510/32801 M • Hysteresis at Inputs to Improve Noise Margins • 2-Way Asynchronous Data Bus Communications • Input Clamp Diodes Limit High-Speed Termination Effects

TRANSISTOR SMD MARKING CODE loc

Abstract: POWER AMPLIFIER GROUP DATASHET transistor datashet list Datasheet lcd 162 smd marking RAI transistor "envelope detector diode" LMC7101 temperature TRANSISTOR SMD MARKING CODE 1v smd code lmc7101 smd 8pin marking 611
Contextual Info: LMC8101 Qualification Package World’s First 2.7V, 1MHz RR I/O Op Amp in mico SMD Package Standard Surface Mount Packages vs. micro SMD National’s LMC8101 Delivers 10mA Output Drive and Shutdown Capability • Output Drive is 3X LMC7101 or 10mA • 1µA Shutdown Current with < 10µS

transistor 2N3906 smd 2A SOT23

Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Diode SMD SJ 99

Contextual Info: P h ilip s Sem iconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

1N3064

Abstract: 54LS243
Contextual Info: M Military 54LS243 M O TO R O LA Quad Bus Transceivers With 3-State Outputs mun MP0 ELECTRICALLY TESTED PER: M IL-M-38510/32802 The 54LS243 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses.

Contextual Info: < 8> M ilitary 5 4 L S1 5 8 M OTOROLA Q uad 2-Input D ata Sele ctor/M u ltip le xe r w ith En ab le MPO ELECTRICALLY TESTED PER: MIL-M-38510/30904 /////// The LSTTL/MSI 54LS158 is a high-speed Quad 2-Input Multiplexer. It selects four bits of data from two sources using the common Select and

g21 SMD Transistor

Abstract: TAS1020EVM SMD lm317 D0201AD G21 SMD 2540-6002UB TAS1020 766163331G LM317 SOT223 SMD Transistor g22
Contextual Info: TAS1020 EVM Development Platform for the TAS1020 Universal Serial Bus Streaming Data Controller User’s Guide February 2001 Digital Audio Products SLAU061 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

A5 KNA

Abstract: SMD HL2
Contextual Info: M M O T O R O L A M ilita ry 54L S 373 O c tal D -iy p e Flip-Flop W ith Transp arent L atch and 3 -S ta te O utputs MPO E L E C T R IC A L L Y T E S T E D P ER : M IL -M -3 8 5 1 0 /3 2 5 0 2 //# # # # / T h e 5 4 L S 3 7 3 c o n s is ts o f e ig h t la tc h e s w ith 3 - s ta te o u tp u ts fo r b u s

74AC

Abstract: AC244 AC540 AC541
Contextual Info: & March 1993 54 A C /7 4AC541 Octal Buffer/Line Driver with TRI-STATE Outputs General Description Features The ’AC541 is an octal buffer/line driver designed to be employed as memory and address drivers, clock drivers and bus oriented transmitter/receivers. The ’AC541 is a nonin­

74AC

Abstract: AC14
Contextual Info: June 1993 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The ’AC14 contains six inverter gates each with a Schmitt trigger input. The ’AC14 contains six logic inverters which accept standard CMOS input signals and provide standard

AC14

Abstract: HP 1521 N7B A smd UJ 99 74AC yf diode 6 pin smd smd transistor yf
Contextual Info: June 1993 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The ’AC14 contains six inverter gates each with a Schmitt trigger input. The ’AC14 contains six logic inverters which accept standard CMOS input signals and provide standard

Contextual Info: SIEMENS PROFET BTS650P Smart Highside High Current Power Switch O vervoltage protection Vbb AZ 62 V O utput clamp O perating voltage VÒN(CL) 42 V Vbb(on) co V O n-state resistance RON Load current (ISO) /L(ISO) Short circuit current limitation C urrent sense ratio

74AC

Abstract: AC244 ACT244
Contextual Info: & February 1993 54AC/74AC244 • 54ACT/74ACT244 Octal Buffer/Line Driver with TRI-STATE Outputs General Description Features The ’A C /’ACT244 is an octal buffer and line driver designed to be employed as a memory address driver, clock driver and bus-oriented transmitter/receiver which provides im­

Contextual Info: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes

Contextual Info: 5V, 750mA Low Dropout Linear Regulator with Lower RESET Threshold Description The CS8129 is a precision 5V linear regulator capable of sourcing 750mA. The R E SE T threshold voltage has been lowered to 4.2V so that the regulator can be used with 4V microprocessors.

transistor SMD 1p4

Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
Contextual Info: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab