DIODE SOD-123 MARKING CODE 26 Search Results

CT25

Abstract: Q62702-B499 marking code BB Diode
Contextual Info: BB 419 Silicon Variable Capacitance Diode ● BB 419 For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR

Contextual Info: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 419 • For V H F tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) Ò SOD-123 1 o CMA0700I Maximum Ratings Parameter Symbol Values Unit

tp 127

Abstract: Code sod-123 on semiconductor
Contextual Info: BAS85W SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • Voltage clamping • Protection circuits 1 Cathode 2 Anode 2 1 MB Top View Marking Code: "MB" Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC

zener diode E2

Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
Contextual Info: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6

Diode marking CODE 5M SOD

Abstract: SOD-123 marking code A1 MBR130T1G Diode SOd-123 marking cu 5M MARKING CODE SCHOTTKY DIODE marking code EE sod-123 marking code DV MBR130T1 MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

diode marking 74 SOD123

Abstract: diode sod-123 marking code b3 schottky diode sod-123 marking code 120 sod123 B3 diode sod-123 marking code 120 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

JS SOD123

Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1.) @ TA = 25°C

schottky diode sod-123 marking code 120

Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

schottky diode sod-123 marking code 120

Abstract: diode marking 74 SOD123 MBR0530T1G MARKING B3 SOD marking 74 A11E MBR0530T1 MBR0530T1G MBR0530T3 MBR0530T3G SOD123 marking 74
Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

JS SOD123

Abstract: MMSD103T1
Contextual Info: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR–5 Board (Note 1.) @ TA = 25°C

MBR0530T1G

Abstract: MBR0530T1 MBR0530T3 MBR0530T3G diode sod-123 marking code b3
Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity

MBR0530T1G

Abstract: MBR0530T1 MBR0530T3 MBR0530T3G
Contextual Info: MBR0530T1, MBR0530T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity

MMSD103T1

Contextual Info: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Peak Forward Surge Current http://onsemi.com 1 Cathode THERMAL CHARACTERISTICS

MBR130T1G

Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Diode SOd-123 marking cu

Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity

MBR130T1G

Abstract: MBR130T3G
Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR130, NRVB130 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

SOD-123LF

Abstract: MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G
Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

SOD-123LF

Abstract: MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL
Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection