DIODE SOIC8 Search Results
DIODE SOIC8 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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DIODE SOIC8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UC1612 UC3612 y ^ UNITRODE Dual Schottky Diode FEATURES DESCRIPTION • The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. Monolithic Two Diode Array Exceptional Efficiency |
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UC1612 UC3612 UC3612 100mA | |
V6CH
Abstract: diode ch9
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SP0506CAA, SP0506CAB, SP0518CAA immuni025" SP0506CAA SP0506 SP0506CAB SP0518 SP0518CAA V6CH diode ch9 | |
UC1612J
Abstract: UC1612L UC3612 UC3612DP UC3612J UC3612N UC1612
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UC1612 UC3612 UC1612 UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N | |
Contextual Info: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage |
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UC1612 UC3612 UC3612 | |
DIODE DATABOOK
Abstract: FLYBACK CLAMPING DIODE UC1612 UC3612
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UC1612 UC3612 UC1612 DIODE DATABOOK FLYBACK CLAMPING DIODE UC3612 | |
FLYBACK CLAMPING DIODE
Abstract: Schottky Diode 40V 5A Schottky Diode 40V 5A dual Schottky Diode 50V 3A DIODE DATABOOK DUAL DIODE two transistor forward UC1612 UC3612
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UC1612 UC3612 UC1612 100mA FLYBACK CLAMPING DIODE Schottky Diode 40V 5A Schottky Diode 40V 5A dual Schottky Diode 50V 3A DIODE DATABOOK DUAL DIODE two transistor forward UC3612 | |
Schottky diode Die flip chip
Abstract: UC1612 UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N
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UC1612 UC3612 UC1612 Schottky diode Die flip chip UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N | |
2N3904 331 transistor
Abstract: lm63
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SNAS190D 2N3904, 2N3904 331 transistor lm63 | |
LM63CIM-16
Abstract: LM63 lm63c1 2N3904 LM63CIMA LM63DIMA
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2N3904, LM63CIM-16 LM63 lm63c1 2N3904 LM63CIMA LM63DIMA | |
USER-CONFIGURE
Abstract: 2N3904 LM63 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL 2N3904 331 transistor 2n3904 331
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2N3904, USER-CONFIGURE 2N3904 LM63 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL 2N3904 331 transistor 2n3904 331 | |
Contextual Info: y IN T E G R A T E D C IR C U IT S UC1612 UC3612 UNITRODE Dual Schottky Diode FEATURES DESCRIPTION Monolithic Two Diode Array The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. |
OCR Scan |
UC1612 UC3612 | |
30A 44 zener diode
Abstract: srda05
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SRDA05 IEC61000-4-5, IEC61000-4-4, 5/50ns) IEC61000-4-2, MS-012) 30A 44 zener diode | |
Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SRDA3.3 Series SRDA3.3 Series 8pF 35A Diode Array RoHS Pb GREEN The SRDA3.3 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning induced surge events. This device can |
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IEC61000-4-5 IEC61000-4-2 IEC61000-4-5, | |
Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SRDA05 Series SRDA05 Series 8pF 30A Diode Array RoHS Pb GREEN Description The SRDA05 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning induced surge events. This robust device |
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SRDA05 IEC61000-4-5 IEC61000-4-2 IEC61000-4-4, 5/50ns) | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SRDA05 Series SRDA05 Series 8pF 30A Diode Array RoHS Pb GREEN Description The SRDA05 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning induced surge events. This robust device |
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SRDA05 IEC61000-4-5 IEC61000-4-2 IEC61000-4-4, 5/50ns) | |
Contextual Info: AO4607 30V Complementary MOSFET with Schottky Diode General Description Product Summary The AO4607 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is copackaged with the n-channel FET to minimize body diode |
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AO4607 AO4607 | |
Contextual Info: IN T E G R A T E D C IR C U IT S UC1612 UC3612 U N IT R O D E Dual Schottky Diode DESCRIPTION FEATURES The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. Monolithic Two Diode Array |
OCR Scan |
UC1612 UC3612 UC1612 | |
LM63
Abstract: 2N3904 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL transistor c900 TLHB11
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2N3904, LM63 2N3904 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL transistor c900 TLHB11 | |
AO4704Contextual Info: AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics.This device is suitable for |
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AO4704 AO4704L | |
MOSFET and parallel Schottky diode
Abstract: AO4704
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AO4704 AO4704 MOSFET and parallel Schottky diode | |
Contextual Info: AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics.This device is suitable for |
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AO4704 AO4704 | |
AO4704
Abstract: MOSFET and parallel Schottky diode AO4704L
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AO4704 AO4704 AO4704L MOSFET and parallel Schottky diode | |
fdfs6n303
Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
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FDFS6N303 fdfs6n303 6n303 L86Z SOIC-16 F011 F63TNR F852 | |
fdfs6n303
Abstract: F011 F63TNR F852 L86Z SOIC-16
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FDFS6N303 050lopment. fdfs6n303 F011 F63TNR F852 L86Z SOIC-16 |