DIODE SSI L28 Search Results

thyristor AEG t 10 n 600

Abstract: Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 SIEMENS BST siemens ssi k38 diode ssi L28 SIEMENS BST L35 SIEMENS BST p49 thyristor aeg
Contextual Info: Cross reference list I Components of eupec with high power and/or high reverse voltage mainly come from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65

MPC8610EC

Abstract: MC8610 marking code V6 74 surface mount diode marking ss24 PCI express PCB footprint B12 IC marking code circuit diagram of LCD connection to pic marking code V6 DIODE marking code V6 surface mount diode marking v6 78 diode
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 0, 10/2008 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files

Contextual Info: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files

arco ss32 capacitor

Abstract: diode ssi L28 PCI express PCB footprint AH10 SS33 E6005 SS44 marking SS44 marking code MPC8610 marking code V6 74 surface mount diode MPC8610EC
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files

Contextual Info: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)

PC8610

Abstract: microprocessor
Contextual Info: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)

Contextual Info: 10mm BAYONET BASED LED LAMP BLB101SURC-E-28V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. with DH InGaAlP on GaAs substrate Light lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT l LONG LIFE. l LOW CURRENT, POWER SAVINGS. lLOW MAINTENANCE.

Contextual Info: 5mm FLANGE BASED LED LAMP BLF052SURC-E-28V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate Light Emitting Diode. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Hyper Red source color devices are made with DH

Contextual Info: 5mm FLANGE BASED LED LAMP BLF052MGC-28V-P MEGA GREEN Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. with DH InGaAlP on GaAs substrate Light Emitting lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. lLOW CURRENT, POWER SAVINGS. The Mega Green source color devices are made

Contextual Info: 5mm FLANGE BASED LED LAMP BLF052SYC-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG LIFE. SUPER BRIGHT YELLOW Description The Super Bright Yellow device is made with DH InGaAlP on GaAs substrate light emitting diode chip.

BLFA054MGCK-28V

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054MGCK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW MEGA GREEN Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.

BLFA054SECK-28V

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054SECK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. l LONG l LOW LIFE. SUPER BRIGHT ORANGE Description The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054MGCK-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW MEGA GREEN Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.

BLFA054SURCK28V

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054SURCK28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. l LONG l LOW HYPER RED Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054MBC-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW LIFE. l SOLID Description The Blue source color devices are made with GaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is

BLFA054SYCK-28V

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054SYCK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW LIFE. SUPER BRIGHT YELLOW Description The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate

pin vga CRT pinout

Abstract: samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 3, 7/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm

DDR3 phy 100 pin diagram

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 1, 3/2011 MCIMX53xD This document contains information on a new product. Specifications and information herein are subject to change without notice. i.MX53xD Applications

SCIMX538DZK1C

Abstract: samsung eMMC 4.5 MCIMX535 emmc pcb layout lpddr2 pcb layout LPDDR2 PoP samsung* lpddr2* pop package N7U2 Freescale i.MX53 Quick Start Board AMBA AXI
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4.1, 2/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch

MCIMX535

Abstract: MCIMX535DVV1C MCIMX535DVV IMX53CEC mc33902 tepbga-2 MCIMX538DZK1C H.263 *IMX53 emmc pcb layout
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4, 11/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch

eMMC "thermal impedance"

Abstract: PCIMX535DVV1C emmc Card connector 062N n78c 4.712 eMMC PoP emmc pcb layout 100KPD diode 4.7-16
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 2, 5/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm

lpddr2 spec

Abstract: tablet mid SAMSUNG RF MODULATORS MLC nand 2012 emmc DDR3 pcb layout MCIMX535DVV1C emmc 4.5 samsung samsung eMMC 5.1 H 204 TK1 SCIMX
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX53CEC Rev. 5, 12/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch

SCIMX

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4.1, 2/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch

MCIMX535

Abstract: emmc DDR3 pcb layout samsung eMMC 4.5 eMMC 4.4 eMMC rja rjc emmc Pin assignment samsung NAND Flash DIE i.mx53 samsung eMMC 5.0 SCIMX
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX53CEC Rev. 6, 03/2013 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch