Untitled
Abstract: No abstract text available
Text: RM400HA-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 400 Amperes/1200 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are designed for use in applications
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RM400HA-24S
Amperes/1200
125oC
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FAST RECOVERY DIODE
Abstract: D-40 RM400HA-24S RM400HA24S
Text: RM400HA-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 400 Amperes/1200 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are designed for use in applications
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RM400HA-24S
Amperes/1200
125oC
FAST RECOVERY DIODE
D-40
RM400HA-24S
RM400HA24S
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Untitled
Abstract: No abstract text available
Text: Central TM Semiconductor Corp. CMDSH-3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage
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OD-323
100mA
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MUR30040CT thru MUR30060CTR
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. MUR30040CT thru MUR30060CTR Super Fast Recovery Diode, 300A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified
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MUR30040CT
MUR30060CTR
MUR30060CT
TJ040CT
MUR30040CT thru MUR30060CTR
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MUR10040CT thru MUR10060CTR
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. MUR10040CT thru MUR10060CTR Super Fast Recovery Diode, 100A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified
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MUR10040CT
MUR10060CTR
MUR10060CT
040CT
MUR10040CT thru MUR10060CTR
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Untitled
Abstract: No abstract text available
Text: CMHSH-3 Central TM Semiconductor Corp. SUPER-MINI SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-123
100mA
14-Sept
OD-123
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Untitled
Abstract: No abstract text available
Text: NE Central CMDSH2-3 W TM Semiconductor Corp. SUPER-MINI SCHOTTKY DIODE HIGH CURRENT - 200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage
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200mA
OD-323
100mA
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MUR20040CT thru MUR20060CTR
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified
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MUR20040CT
MUR20060CTR
MUR20060CT
040CT
MUR20040CT thru MUR20060CTR
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MUR10005CT thru MUR10020CTR
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. MUR10005CT thru MUR10020CTR Super Fast Recovery Diode, 100A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified
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MUR10005CT
MUR10020CTR
MUR10010CT
MUR10020CT
MUR10005CT thru MUR10020CTR
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MUR20005CT thru MUR20020CTR
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. MUR20005CT thru MUR20020CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified
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MUR20005CT
MUR20020CTR
MUR20010CT
MUR20020CT
MUR20005CT thru MUR20020CTR
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MUR30005CT thru MUR30020CTR
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. MUR30005CT thru MUR30020CTR Super Fast Recovery Diode, 300A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified
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MUR30005CT
MUR30020CTR
MUR30010CT
MUR30020CT
MUR30005CT thru MUR30020CTR
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MOSFET TOSHIBA 2015
Abstract: No abstract text available
Text: 2015 Super 12 Products SiHP33N60EF / EF Series High-Voltage MOSFETs SiHP33N60EF / EF Series HV Fast Body Diode Power MOSFET Offers up to 10x Reduction in Qrr • Features: • Based on E Series Super Junction technology • Fast body diode provides as much as 10x reduction in Qrr over
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SiHP33N60EF
MOSFET TOSHIBA 2015
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ES1D
Abstract: ES1D DIODE marking code es1d
Text: UNISONIC TECHNOLOGIES CO., LTD ES1D Preliminary DIODE SURFACE MOUNT SUPER FAST RECTIFIER DESCRIPTION + The UTC ES1D is a surface mount super fast rectifier, it uses UTC’s advanced technology to provide customers with super fast switching, high forward surge current and low reverse leakage, etc.
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DO-214AC)
QW-R601-236
ES1D
ES1D DIODE
marking code es1d
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CMDSH-3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage
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OD-323
100mA
DDD177E
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Untitled
Abstract: No abstract text available
Text: Centrar CMDSH2-3 Semiconductor Corp. SUPER-MINI SCHOTTKY DIODE HIGH CURRENT - 200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast sw itching applications requiring a low forward voltage
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200mA
OD-323
100mA
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Untitled
Abstract: No abstract text available
Text: Central CMDSH2-3 Semiconductor Corp. SUPER-MINI SCHOTTKY DIODE HIGH CURRENT - 200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast sw itching applications requiring a low forward voltage
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200mA
OD-323
100mA
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transistor D 667
Abstract: 500 watt power UPS circuit diagram M5 DIODE transistor 667 transistor D 667 C 1000 watt ups circuit diagram 720 transistor A 720 transistor ups 500 watt diagram CC2406100N
Text: POIÜEREX IN C B'JE m/HEREX • ? 2 e14b51 Q005024 S * P R X ' -^ ¿ rg -c ? ! • Fast and Super-Fast Recovery Diode Modules Selector Guide The Powerex Fast and Super Fast Recovery Diode Modules are designed to complement
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2c14b51
cc2406020n
cc2406500n
cc2406100n
cn2406020n
cn2406500n
cn2406100n
transistor D 667
500 watt power UPS circuit diagram
M5 DIODE
transistor 667
transistor D 667 C
1000 watt ups circuit diagram
720 transistor
A 720 transistor
ups 500 watt diagram
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Untitled
Abstract: No abstract text available
Text: Central CMDSH2-3 Semiconductor Corp. SUPER-MINI SCHOTTKY DIODE HIGH CURRENT - 200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast sw itching applications requiring a low forward voltage
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200mA
OD-323
100mA
200mA
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sod-323 "junction to case"
Abstract: Schottky MS SOD-323
Text: Central Semiconductor Corp. MewProductannouncement surer IT ljp j CMDSH-3 Super-miniature Schottky Diode SOD-323 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage drop.
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OD-323
100nA
OD-323
sod-323 "junction to case"
Schottky MS SOD-323
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fast recovery diode 20ns
Abstract: J533 SF3L60U
Text: Super Fast Recovery Diode Single Diode Wtm SF3L60U OUTLINE 600V 3A Feature • rüiitEEFRD • High Voltage Super FRD • Low Noise • trr= 20ns • • trr=20ns • Full Molded 71 [Æ -JU K • « 1 I Î E 2kV«|Œ • Dielectric Strength 2kV Main Use
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SF3L60U
fast recovery diode 20ns
J533
SF3L60U
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DF8L60
Abstract: No abstract text available
Text: w&i&j'KTs surface Mounting Device DF8L60 600V 8A n — 1"— K Super Fast Recovery Diode
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DF8L60
DF8L60
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marking eB diode
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode Wtm SF5L60U OUTLINE 600V 5A Feature • • • • • • rüiitEEFRD • trr=25ns • 71[Æ -JU K •« 1 IÎE 2kV«|Œ High Voltage Super FRD Low Noise trr=25ns Full Molded Dielectric Strength 2kV Main Use • Switching Regulator
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SF5L60U
marking eB diode
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marking sb diode
Abstract: S20LC60 marking JC diode S20LC60US
Text: Super Fast Recovery Diode Twin Diode U K W . OUTLINE S20LC60US 600V 20A Feature •raBEEFRD * High Voltage Super FRD >Low Noise >trr=25ns * Small 9\c •e y -<X » trr= 2 5 n s » e jc tf/J V c S U l Main Use ►Switching Regulator ►Home Appliance, Office Automation
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S20LC60US
marking sb diode
S20LC60
marking JC diode
S20LC60US
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode Wtm D30L60 OUTLINE 600V 30A Feature • rüIitEEFRD • • • • • trr=150ns • 71 lÆ - J U K High Voltage Super FRD Low Noise trr=150ns Full Molded Main Use • • • • • M W .O A • FA Switching Regulator
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D30L60
150ns
150ns
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