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    DIODE SY 162 Search Results

    DIODE SY 162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SY 162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DXT170-71-1

    Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
    Text: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 — SYJ500 VJ500 VZ300


    Original     		PDF SYJ300/500/700 VJ300/500/700 VZ300/500. VJ300 SYJ500 VJ500 VZ300 SYJ700 VJ700 SYJ300 DXT170-71-1 SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171

    SYJ3120-5G-M3-Q

    Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
    Text: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with


    Original     		PDF SYJ3000/5000/7000 VJ3000/5000/7000 VZ3000/5000 VJ3000/5000/7000 VZ3000/5000. SYJ3000 VJ3000 SYJ5000 VJ5000 VZ3000 SYJ3120-5G-M3-Q DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A

    SMC - SY5120

    Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
    Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based


    Original     		PDF SY9000 SY3000 SY5000 SY7000 SMC - SY5120 SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode

    Untitled

    Abstract: No abstract text available
    Text: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description ̈ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low


    Original     		PDF FDFS2P753Z FDFS2P753Z 500mV 580mV

    FDFS2P753Z

    Abstract: No abstract text available
    Text: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low


    Original     		PDF FDFS2P753Z FDFS2P753Z

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    diode sy 162

    Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
    Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"


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    diode sy 162

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Rectifier diodes , PBYR2525CT series schottky GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop


    OCR Scan     		PDF PBYR2525CT O220AB diode sy 162

    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


    OCR Scan     		PDF DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170

    diode sy 710

    Abstract: sy 710 diode DL 711 PHILIPS
    Text: Philips Semiconductors Product specification 16-bit buffer/line driver; inverting 3-State FEATURES 74LVC16240A PIN CONFIGURATION • 5 volt tolerant inputs/outputs for interfacing w ith 5V logic • W ide supply voltage range of 1.2V to 3.6V • C om plies with JED EC standard no. 8-1A


    OCR Scan     		PDF 16-bit 74LVC16240A 74LVC16240A oC16240A diode sy 710 sy 710 diode DL 711 PHILIPS

    652 smd

    Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
    Text: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N


    OCR Scan     		PDF 711002b bds644/646/648/650/652 OT223) BDS643/645/647/649/651. BDS644 BDS646 BDS648 BDS650 BDS652 652 smd IR P 648 H

    integrated circuits equivalents list

    Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH161 FCH181 FCH191 FJJ14 FCL101 equivalent FJH111

    fch131

    Abstract: integrated circuits equivalents list rc 261 7400N FJJ14 FCL101 FCH131 equivalent ttl NAND gate with expander 7402N 7420N
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N fch131 integrated circuits equivalents list rc 261 FJJ14 FCH131 equivalent ttl NAND gate with expander

    logic diagram of 74ls160

    Abstract: IC 74LS160 74hc162 74LS160 function of the ic 74hc160 74hc161 74HC163 74LS160 truth
    Text: HS-CMOS INTEGRATED CIRCUITS C ^ I C i• rO / r ' r1 • U O 4- PREtlM INAR Y DATA SYNCHRONOUS PRESETTABLE 4-BIT COUNTER M 54/74H C 160 M 54/74HC161 M 54/74H C 162 M 54/74H C 163 Decade, Asynchronous Clear Binary, Asynchronous Clear Decade, Synchronous Clear


    OCR Scan     		PDF M54/74HC160 M54/74HC161 M54/74HC162 M54/74HC163 M54/74HC160, M54/74HC160/162 M54/74HC161/163 M54/74HC160/1 M54/74HC162/163 logic diagram of 74ls160 IC 74LS160 74hc162 74LS160 function of the ic 74hc160 74hc161 74HC163 74LS160 truth

    FCH121

    Abstract: FCL101 7400N 7490N 7402N 7420N FJH101 FJH111 FJH121 FJH131
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N FCH121 7490N FJH101 FJH111 FJH121 FJH131

    integrated circuits equivalents list

    Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH111 Mullard Diode 7472N equivalent FCH131 FJH111

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS 74ABT16240A 74ABTH16240A 16-bit inverting buffer/driver 3-State Product specification Supersedes data of 1996 Oct 01 IC23 Data Handbook Philips Semiconductors 1998 Feb 25 PHILIPS Philips Semiconductors Product specification 16-bit inverting buffer/driver (3-State)


    OCR Scan     		PDF 74ABT16240A 74ABTH16240A 16-bit 6240A /-32m

    philips tea charger 14 pin

    Abstract: SMPS battery tea1100 555 timer smps basic transistor 9014 TEA1100 philips tea charger 16 pin CAR SMPS dioda zener type BE 84 s09c TEA1100T
    Text: 2 - ^ 5 - l k ' 0 INTEGRATEDCIRCUITS Lnu r~ i— L TEA1100; TEA1100T Battery monitor for NiCd and NiMH chargers Preliminary specification M ay 1992 File under Integrated Circuits, IC03 Philips Semiconductors PH1UP* PHILIPS P relim in ary s œ c lflc a t lo n


    OCR Scan     		PDF 11H1IET. TEA1100; TEA1100T TEA11Q0; philips tea charger 14 pin SMPS battery tea1100 555 timer smps basic transistor 9014 TEA1100 philips tea charger 16 pin CAR SMPS dioda zener type BE 84 s09c TEA1100T

    33AS9

    Abstract: 33B1 teledyne crystalonics CV166S CV830 CV831 CV832 CV833 CV834 CV835
    Text: öTlTbDE QÜObbSS a M L 2ñE D TELEDYNE COMPONENTS ~ T - £ n - ÍT * CV830 thru CV840 V O L T A G E - V A R IA B L E - C A P A C IT A N C E D IO D E S S IL IC O N P A S S IV A T E D CV 830 Series replaces M V830 Series GEOMETRY 415 S IL IC O N V O L T A G E - V A R IA B L E - C A P A C IT A N C E D IO D E S


    OCR Scan     		PDF CV830 MV830 CV840 Diss275 CV1664 CV1666 33AS9 33B1 teledyne crystalonics CV166S CV831 CV832 CV833 CV834 CV835

    62083AP

    Abstract: 62082AP 62084AP TD62083AP relay dip sy diode sy 166 diode sy 400 8
    Text: TD62081AP/CP/F/AF TD62082AP/CP/F/AF - TD62083AP/CP/F/AF TD62084AP/CP/F/AF SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT 8CH DARLINGTON SINK DRIVER The T D 6 2 0 8 1 A P / C P / F / A F Series are high-voltage, high


    OCR Scan     		PDF TD62081AP/CP/F/AF TD62082AP/CP/F/AF TD62083AP/CP/F/AF TD62084AP/CP/F/AF 2081A TD62081CP TD62081F TD62081AP TD62082AP 62083AP 62082AP 62084AP TD62083AP relay dip sy diode sy 166 diode sy 400 8

    DEJJ

    Abstract: No abstract text available
    Text: TOSHIBA {DISÇRETE/OPTO} 9097250 tfosfuht T O S H IB A TO D I SC R ETE/O PTO DE I T 0 e]7 5 5 0 O O l b E H t □ 90D 16246 DT-33-35: SEMICONDUCTOR M G 7 5 H 2 C L 1 TECHNICAL DATA M G 7 5 II 2 D L 2 U n i t in m m Bl E 1 /C 2 D2 M G 7 5 II 2 C L 1 El


    OCR Scan     		PDF DT-33-35: MG75H2DL2 DEJJ

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors 16-bit bus transceiver with direction pin and A x x v 30ft series termination resistors; 3-State . f 4 L V v / n lD £ £ 4 0 PIN CONFIGURATION FEATURES • W ide supply voltage range o f 1.2V to 3.6V • C om plies w ith JE D E C standard no. 8-1A


    OCR Scan     		PDF 16-bit 74LVCH162245

    Halbleiterbauelemente DDR

    Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
    Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.


    OCR Scan     		PDF 6x10x12 Halbleiterbauelemente DDR Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C

    integrated circuits equivalents list

    Abstract: FCH141 FCH191 7400N FCL101 7402N 7420N FJH101 Mullard Diode FJH121
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH141 FCH191 FJH101 Mullard Diode FJH121