DIODE SY 526 Search Results

diode sy 170

Abstract: diode sy-170
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. Tne device is Intended for use In

telefunken transistoren

Abstract: service-mitteilungen halbleiter telefunken funkschau Radio Fernsehen Elektronik Servicemitteilungen telefunken dioden VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN stassfurt diode sy 526
Contextual Info: SERVICE-MITTEILUNGEN V EB IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N AUSGABE: r a d i o -television 675 J ü N I S S IT Ï 1-6 Der "CHASAR - 401" wird aus der Sowjetunion importiert« Ss handelt sich bei diesem Gerät um einen Kofferempfänger der unteren Preisgruppe. Die tech­

diodes SY 200

Abstract: diode sy 526
Contextual Info: M A XIM U M RATINGS EA CH D IO DE Sy m b o l Value Reverse V oltage Vr 50 V dc Forw ard Current *F 200 m Adc *FM (surge) 500 m Adc Sy m b o l M ax Unit PD 225 mW 1.8 m W /T RtfJA 556 °c/w Pd 300 mW 2.4 m W /X RflJA 417 °C/W Tj< ^sta - 55 to + 1 50 DC Rating

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

DIMMABLE dali

Abstract: led constant current driver 500mA WU-M-293-SB x79x33
Contextual Info: A New Lighting Experience • overload protection • short circuiting protection • SELV equivalent LED Constant Current Drivers • 50,000 hrs service life time LEDLine ECX Konstantstromquellen ECX GB 1/5 January, 2011 Electronic converters for LED modules

WU-M-293-SB

Abstract: EN 55015 class B 18619 DIMMABLE dali WU-M-392 x79x33 WU-M-293-W
Contextual Info: A New Lighting Experience • overload protection • short circuiting protection • SELV equivalent LED Constant Current Drivers • 50,000 hrs service life time LEDLine ECX Konstantstromquellen ECX GB 1/5 November, 2010 Electronic converters for LED modules

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

Diode SY 345

Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich­

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

220V LED Bulb circuit

Abstract: SY5120 SY7000-27-2F-Q SY7000-27-1F-Q AN200-KM10 SY9000-27-2F-Q KQ2P-04 SY5220 SY5000-27-1F-Q eb 102
Contextual Info: Body Ported Valves Series SY3/5/7/9000 Body Ported Valves Series SY3/5/7/9000 Features Wide range of sizes Choice of electrical entries Body ported valves can be manifold mounted One touch fittings for direct connection How to Order SY 5 1 20 5 LO Q 01F

Contextual Info: Ordering number : ENA1762A Bi-CMOS IC LV58063MX Step-down Switching Regulator Overview LV58063MX is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.

LV58063MX

Abstract: CDRH105RNP-100NC 62510 SBM30-03
Contextual Info: Ordering number : ENA1762A Bi-CMOS IC LV58063MX Step-down Switching Regulator Overview LV58063MX is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.

Contextual Info: Ordering number : ENA1762A Bi-CMOS IC LV58063MX Step-down Switching Regulator Overview LV58063MX is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.

pubs

Abstract: CI 556
Contextual Info: SYM53C895 PCI-Ultra2 SCSI 1/O Processor with LVDlink Universal Transceivers D ata Manual Version 3.0 MS9983I T he products described in this publication are products of Symbios, Inc. SC R IPT S and LVDlink are tradem arks, and TolerA N T is a registered tradem ark,

Contextual Info: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

CS-299D

Contextual Info: 2A Dual H-Bridge Driver D escription The CS-298 is a p o w e r in teg rated circuit cap ab le of d riv in g resistive an d in d u c ­ tive lo ad s su ch as relays, so len o id s, DC a n d ste p p in g m otors. This device is a q u a d p u s h -p u ll d riv e r half H -b rid g e

53C876

Abstract: 53C8xx RST32 53c87 53C885
Contextual Info: SYM53C876/876E PCI-Dual Channel SCSI Multi-Function Controller D ata Manual V ersio n 2.0 o I N C R E A S I N G SCSI R E L I A B I L I T Y r lB H R N T A C T I V E T76972I I 197-IMH N E G A T I O N T E C H N O L O G Y T he products described in this publication are products of Symbios Logic Inc.

PMI BUF03

Abstract: RG58 COAXIAL Precision Monolithics, Inc
Contextual Info: p m OP-61 D WIDE-BANDWIDTH, PRECISION OPERATIONAL AMPLIFIER A v&10 M o n o îith u s ! n FEATURES • • • • • • High Gain-Bandwidth Product. 200MHz Typ Low Voltage Noise. ZAnVlVHz @ 1 kHz

PMI OP AMP

Contextual Info: OP-61 WIDE-BAND WIDTH, PRECISION OPERATIONAL AMPLIFIER A va 10 P r e c is io n M o n o li th i c s In c. FEATURES • High G ain-B andw idth P ro d u c t. 200MHz Typ • Low Voltage N o is e . 3.4nV/ \/R z @ 1 kHz

TPC 8028

Abstract: MAB 2650 A HD6417622BP80 PJ0D* DIODE HD6417622BP100 HD6417622FL80 PDIUSBP11 SH7622 Philips 2222 168 SH2-DSP programming manual
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TPC 8028

Abstract: pf7dt Hitachi DSAUTAZ006 xab 0133 HA200
Contextual Info: Hitachi SuperH RISC engine SH7622 Hardware Manual ADE-602-212 Rev. 1.0 1/25/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

15HEX

Abstract: Hitachi DSA00279 SH2-DSP programming manual
Contextual Info: Hitachi SuperH RISC engine SH7622 Hardware Manual ADE-602-212A Rev. 2.0 9/19/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

TPC 8028

Abstract: a888 513 CKE 2009 PJ0D* DIODE 2015 static ram HD6417622BP100 induction heating 2010 LS 2027 nls pf5 TAD 2073
Contextual Info: Hitachi SuperH RISC engine SH7622 Hardware Manual ADE-602-212A Rev. 2.0 9/19/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

HD6417622FL80

Abstract: PDIUSBP11 SH7622 J-158 HA200 db311
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.