DIODE T29 Search Results

laptop mother board voltage details

Abstract: 3904 TRANSISTOR 2N3904 APP National Discrete Products
Contextual Info: LM95241 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruThermTechnology 65nm/90nm Literature Number: SNIS143D LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology (65nm/90nm) • Remote temperature readings without digital filtering:

T589N

Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Contextual Info: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]

laptop mother board voltage details

Abstract: 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1
Contextual Info: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm • Remote temperature readings without digital filtering: General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National's TruTherm technology.

laptop mother board voltage details

Abstract: 452 diode 3904 transistor 2n3904 transistor 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX
Contextual Info: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

3904 transistor

Abstract: amd athlon PIN LAYOUT
Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

3904 transistor

Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

T1081N

Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Contextual Info: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N

t29n15e

Abstract: AN569 MTB29N15E MTB29N15ET4
Contextual Info: MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

135 D 4 e

Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

t2955e

Abstract: T2-955e
Contextual Info: MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.

3904 transistor

Contextual Info: LM95241 www.ti.com SNIS143D – AUGUST 2006 – REVISED APRIL 2011 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES 1 • 23 • • • • • • • • Accurately senses die temperature of remote

THYRISTOR t508n

Abstract: k0.36s T718N T719N T1189N T1509N T1989N T298N T358N T508N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

T-29-25

Abstract: fet af JCSK123 KSK123 lovos S16-O
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILT4N DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Drain Source Voltage Drain Gate Voltage

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Contextual Info: SAMSUNG S EM ICO NDUC TOR INC 14E D I 711*4142 OOOl. Tl? B | KSK65 Si N-CHANNEL JUNCTION FET T-29-25 AF IMPEDANCE CONVERTER • BuiIMn Diode Between G and S • Low NV ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Drain-Source Voltage Gate-Drain Voltage

Contextual Info: S A MS U N G SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILHN DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Drain Source Voltage Drain Gate Voltage

new bright R288-2

Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Contextual Info: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz

K530

Abstract: FESS 006 KSK65
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D I 7 1 1 * 4 1 4 2 OOOl. T l ? fi | KSK65 Si N-CHAÑNEL JUNCTION FET T-2 9 -2 5 AF IMPEDANCE CONVERTER • BuilHn Diode Between G and S • Low NV ABSOLUTE MAXIMUM RATINGS T8= 2 5 °C Characteristic Drain-Source Voltage Gate-Drain Voltage