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    DIODE T3D 25 Search Results

    DIODE T3D 25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE T3D 25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T3D DIODE

    Abstract: T3D 36 diode T3D 43 diode T3D 28 DIODE Diode T3D 24 Diode T3D 44 T3D 34 diode Kodak KAI 2000 T3D 21 diode T3D 37 DIODE
    Text: Performance Specification KAI-2093M KAI - 2093M 1920 H x 1080 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 2 February 11, 2002 Eastman Kodak Company – Image Sensor Solutions


    Original     		PDF KAI-2093M 2093M 40MHz. T3D DIODE T3D 36 diode T3D 43 diode T3D 28 DIODE Diode T3D 24 Diode T3D 44 T3D 34 diode Kodak KAI 2000 T3D 21 diode T3D 37 DIODE

    t3d diode

    Abstract: KAI-2093M KAI-2093 T3D 55 diode marking t3d T3D 01 DIODE T3D 28 T3D 17 diode
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0307 March 19, 2007 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


    Original     		PDF MTD/PS-0307 KAI-2093 t3d diode KAI-2093M T3D 55 diode marking t3d T3D 01 DIODE T3D 28 T3D 17 diode

    T3D 36 diode

    Abstract: T3D+36+diode
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


    Original     		PDF MTD/PS-0307 KAI-2093 MTD/PS-0307 T3D 36 diode T3D+36+diode

    DIODE T3D 95

    Abstract: t3d diode T3D 34 diode kai-2093cm T3D 01 DIODE T3D 28 DIODE 360NM diode marking code t3d kai image sensor diode marking t3d
    Text: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JULY 13, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5


    Original     		PDF KAI-2093 PS-0026 PS-0026 DIODE T3D 95 t3d diode T3D 34 diode kai-2093cm T3D 01 DIODE T3D 28 DIODE 360NM diode marking code t3d kai image sensor diode marking t3d

    T3D DIODE

    Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


    Original     		PDF MTD/PS-0307 KAI-2093 MTD/PS-0307 T3D DIODE T3D DIODE clamp diode T3D kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55

    Untitled

    Abstract: No abstract text available
    Text: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 11, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5


    Original     		PDF KAI-2093 PS-0026 PS-0026

    T3D 46 DIODE

    Abstract: Diode T3D 54 T3D 54 DIODE T3D 53 diode KAI-4010M T3D 53 DIODE T3D 95 40MHZ HLMP-8115 KAI-4010
    Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-4010 KODAK KAI-4010M KODAK KAI-4010CM Image Sensor 2048 H x 2048 (V) Interline Transfer Progressive Scan CCD November 25, 2003 Revision 2.0 KAI-4010 Series Rev 2.0 www.kodak.com/go/imagers


    Original     		PDF KAI-4010 KAI-4010M KAI-4010CM KAI-4010 T3D 46 DIODE Diode T3D 54 T3D 54 DIODE T3D 53 diode KAI-4010M T3D 53 DIODE T3D 95 40MHZ HLMP-8115

    T3D 97 diode

    Abstract: MARKING "V2H" DIODE KAI-4011 Sn 4011 40MHZ HLMP-8115 NLPB500 NSPG500S Diode T3D 35 T3D DIODE
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-0718 January 25, 2006 KODAK KAI-4011 IMAGE SENSOR 2048 H X 2048(V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification .5


    Original     		PDF MTD/PS-0718 KAI-4011 MTD/PS-0718 T3D 97 diode MARKING "V2H" DIODE Sn 4011 40MHZ HLMP-8115 NLPB500 NSPG500S Diode T3D 35 T3D DIODE

    KAI-4021

    Abstract: T3D 84 diode Kodak KAI-4021 Diode T3D 27 KAI4021M Diode T3D 64 KAI-4021M
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-0719 January 25, 2006 KODAK KAI-4021 IMAGE SENSOR 2048 H X 2048(V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification .5


    Original     		PDF MTD/PS-0719 KAI-4021 T3D 84 diode Kodak KAI-4021 Diode T3D 27 KAI4021M Diode T3D 64 KAI-4021M

    1N914

    Abstract: No abstract text available
    Text: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN


    OCR Scan     		PDF 1N914 500mA Vn-20

    T3D 75 diode

    Abstract: T3D DIODE
    Text: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)


    OCR Scan     		PDF G003bn THD9751 THD9752 THYA01 THYA02 THYB01 THYB02 THYI01 THYI02 THBQ01 T3D 75 diode T3D DIODE

    T3D DIODE

    Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
    Text: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns


    OCR Scan     		PDF 0003b27 TMPD459 TMPD914 TMPD2835 TMPD2836 TMPD2837 TMPD2838 TMPD4148 TMPD4150 TMPD4153 T3D DIODE T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A


    OCR Scan     		PDF THD457 THD458A THD459 THD459A THD462 THD485 THD485B THD550 THD645 THD914

    Diode T3D 64

    Abstract: T3D 62 T3D zener DIODE T3D 25 t3d 62 diode T3D DIODE T3D zener DIODE diode zener t3d 25 T3D 64 diode T3D 75 diode T3D 64
    Text: SPRAGUE/SEMICOND Ô S 1 4 0 1 9 SPRAGUE. GROUP 13 D • ÔS13ÔSG S E M I C O N D S / ICS 00D3b2S 93D 03625 1 ■ iTT-Z^S DIODE CHIPS ‘THZ’ Temperature-Compensated Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C 0 Temp. Coefficient (±ppm/°C)


    OCR Scan     		PDF 00D3b2S THZ821 THZ821A THZ823 THZ823A THZ825 THZ825A THZ827 THZ827A THZ4565 Diode T3D 64 T3D 62 T3D zener DIODE T3D 25 t3d 62 diode T3D DIODE T3D zener DIODE diode zener t3d 25 T3D 64 diode T3D 75 diode T3D 64

    T3D 35 zener DIODE

    Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
    Text: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)


    OCR Scan     		PDF 0003b54 T3D 35 zener DIODE T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D

    T3D 46 diode

    Abstract: Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56
    Text: SIEMENS BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm ^FRMS irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current


    OCR Scan     		PDF O-218AD C67047-A2250-A2 A23SbG5 235b05 T3D 46 diode Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56

    T3D 54 DIODE

    Abstract: T3D 55 diode T3D DIODE 29 T3D 01 DIODE Diode T3D 44 74AC245
    Text: SGS-THOMSON ilLICTlBi iD gi 74AC245 OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS (NON INVERTED HIGH SPEED: t o = 4.5 ns (TYP.) at Vcc =5V . LOW POWER DISSIPATION: Icc = 8 nA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: Vnih = Vnil = 28% Vcc (MIN.) . 50Q TRANSMISSION LINE DRIVING


    OCR Scan     		PDF 74AC245 74AC245M AC245 tec50% SC09220 7T2T237 0077T22 P013L T3D 54 DIODE T3D 55 diode T3D DIODE 29 T3D 01 DIODE Diode T3D 44 74AC245

    T3D zener DIODE

    Abstract: T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56
    Text: SP RA GUE /S EMIC OND GROUP 8 5 14 01 9 SPRAGUE. =13 D • Ô513Ô5D 0D03bE2 3 ■ S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Leakage Current Zener Voltage Zener Impedance


    OCR Scan     		PDF 0D03bE2 T3D zener DIODE T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56

    T3D 29 zener DIODE

    Abstract: diode zener t3d 23 T3D 67 diode T3D 58 diode T3D zener DIODE T3D 83 DIODE T3D 81 DIODE T3D 98 diode Diode T3D 57 Diode T3D 81
    Text: SPRAGUE/SEMICOND 85 14 01 9 SPRAGUE. GROU P TB D • Ô513ÔSG S E M I C O N D S / ICS ÜQD3bEG T ■ 93 D 0 3 6 2 0 T ~ t f ~ Q t t DIODE CHIPS / ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF

    Diode T3D 82

    Abstract: T3D DIODE Diode T3D 08 Diode T3D 26 T3D 65 diode T3D 82 diode Diode T3D 27 diode T3D 24 T3D 82 T3D 28 DIODE
    Text: MF7643 4-Channel High-Speed Non-Inverting 15 M H z Input Bandwidth 8-Bit DACs with Outpul EJuffers and Parallel Digi :al Data Port M M icro Power System s FEATURES • DACs Matched to ±0.5% typ • Low Harmonic Distortion: 0.25% ypical with VREF = 1 V p - p 0 1 MHz


    OCR Scan     		PDF MF7643 150ns Diode T3D 82 T3D DIODE Diode T3D 08 Diode T3D 26 T3D 65 diode T3D 82 diode Diode T3D 27 diode T3D 24 T3D 82 T3D 28 DIODE

    T3D diode

    Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
    Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT451N b501130 T3D diode T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30

    4538B

    Abstract: Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M54HC4538F1R M74HC4538 M74HC4538B1R M74HC4538C1R M74HC4538M1R
    Text: r z r z S G S -T H O M S O N M54HC4538 ^ 7 # MommiOTTECTOOS_ M74HC4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR HIGH SPEED = 25 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION STANDBY STATE Ice = 4 ^A (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 nA (TYP.) AT Vcc = 5 V


    OCR Scan     		PDF M54HC4538 M74HC4538 10LSTTL 4538B M54HC4538F1R M74HC4538M1R M74HC4538B1R M74HC4538C1R DD5S332 M54/M74HC4538 4538B Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M74HC4538 M74HC4538C1R

    T3D 67 diode

    Abstract: Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77
    Text: f Z 7 S G S -T H O M S O N Ä 7 # ¡ i» œ m O T o « S M 54HC4538 M 74HC4538 % DUAL RETRIGGERABLE MONOSTABLE M ULTIVIBRATOR • HIGHSPEED tpD = 25 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION STANDBY STATE lcc = 4|iA (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 |iA (TYP.) AT Vcc = 5 V


    OCR Scan     		PDF 54HC4538 74HC4538 4538B Duty/100 M54/M74HC4538 0DSS332 DG5S333 T3D 67 diode Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77

    T3D 54 DIODE

    Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
    Text: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbSBT31 002Cm50 BUK453-100A BUK453-1OOB BUK453 -100A -100B T3D 54 DIODE Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE