Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit
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OD-323
BAV16WS/1N4148WS
OD-323
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit
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OD-323
BAV16WS/1N4148WS
OD-323
1N4148WS
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T4 SOD-123
Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
Text: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4
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OD-123
BAV16W/1N4148W
OD-123
020REF
500REF
T4 SOD-123
diode marking T4 sod123
DIODE T4 marking
sod 123 t4 marking
A2 SOD-123
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DIODE T4 marking
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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OD-323
BAV16WS/1N4148WS
OD-323
150mA
DIODE T4 marking
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES + - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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OD-323
BAV16WS/1N4148WS
OD-323
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DIODE T4 marking
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM
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OD-123
BAV16W/1N4148W
OD-123
150mA
DIODE T4 marking
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1SV270
Abstract: DIODE T6 marking
Text: 1SV270 SILICON EPITAXIAL PLANAR DIODE VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Small package • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T6 Applications • VCO for UHF band radio Absolute Maximum Ratings Ta = 25 OC
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1SV270
OD-323
OD-323
1SV270
DIODE T6 marking
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DIODE T4 marking
Abstract: T4 SOD-123 marking SOD-123 MS SOD-123 1N4148w DIODE T4 T4 DIODE IR225
Text: Formosa MS SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current
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OD-123
BAV16W/1N4148W
OD-123
150mA
DIODE T4 marking
T4 SOD-123
marking SOD-123
MS SOD-123
1N4148w
DIODE T4
T4 DIODE
IR225
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1SV270
Abstract: 470MHZ
Text: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View
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1SV270
OD-323
OD-323
1SV270
470MHZ
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1SV270
Abstract: 470MHZ
Text: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View
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1SV270
OD-323
OD-323
1SV270
470MHZ
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Untitled
Abstract: No abstract text available
Text: SO T6 66 PESD5V0F5UV Femtofarad unidirectional fivefold ESD protection array Rev. 1 — 17 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad capacitance unidirectional ElectroStatic Discharge ESD protection diode array designed to protect up to five signal lines from the damage caused by ESD and
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OT666
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diode marking N9
Abstract: No abstract text available
Text: SO T6 66 PESD5V0F5UV Femtofarad unidirectional fivefold ESD protection array Rev. 1 — 17 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad capacitance unidirectional ElectroStatic Discharge ESD protection diode array designed to protect up to five signal lines from the damage caused by ESD and
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OT666
diode marking N9
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MIXA151W1200EH
Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Text: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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151W1200EH
MIXA151W1200EH
E72873
20110719a
MIXA151W1200EH
D6 TRANSISTOR MARKING
IC marking code D3
D434
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
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MIXA61H1200ED
Abstract: No abstract text available
Text: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive
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61H1200ED
E72873
20110509a
MIXA61H1200ED
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Untitled
Abstract: No abstract text available
Text: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive
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61H1200ED
E72873
20110509a
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Untitled
Abstract: No abstract text available
Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.
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MIXA150W1200TEH
E72873
20110510b
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101W1200EH
Abstract: D434
Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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101W1200EH
MIXA101W1200EH
E72873
Uninter1200
20110715a
101W1200EH
D434
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Untitled
Abstract: No abstract text available
Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.
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MIXA150W1200TEH
E72873
20110510b
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Untitled
Abstract: No abstract text available
Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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101W1200EH
MIXA101W1200EH
E72873
20110715a
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MIEB101W1200EH
Abstract: 101W1200EH
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology
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101W1200EH
MIEB101W1200EH
E72873
20110511a
MIEB101W1200EH
101W1200EH
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Untitled
Abstract: No abstract text available
Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 120 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.
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MIXA150W1200TEH
E72873
20100929a
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MIXA40WB1200TED
Abstract: IXYS MIXA40WB1200TED mixa40wb1200 d14 ntc airconditioning inverter circuit DIODE T7 marking NTC 8
Text: MIXA40WB1200TED Converter - Brake - Inverter Module XPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 150 A IC25 = 28 A IC25 = 60 A IFSM = 320 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)
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MIXA40WB1200TED
IDAVM25=
20090804c
MIXA40WB1200TED
IXYS MIXA40WB1200TED
mixa40wb1200
d14 ntc
airconditioning inverter circuit
DIODE T7 marking
NTC 8
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Untitled
Abstract: No abstract text available
Text: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;
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ERD31
5tvlZaTS30S3^
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