DIODE T6 MARKING Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit

T4 SOD-123

Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
Contextual Info: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4

DIODE T4 marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES + - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits

DIODE T4 marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM

1SV270

Abstract: DIODE T6 marking
Contextual Info: 1SV270 SILICON EPITAXIAL PLANAR DIODE VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Small package • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T6 Applications • VCO for UHF band radio Absolute Maximum Ratings Ta = 25 OC

DIODE T4 marking

Abstract: T4 SOD-123 marking SOD-123 MS SOD-123 1N4148w DIODE T4 T4 DIODE IR225
Contextual Info: Formosa MS SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current

1SV270

Abstract: 470MHZ
Contextual Info: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View

1SV270

Abstract: 470MHZ
Contextual Info: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View

Contextual Info: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;

Contextual Info: SO T6 66 PESD5V0F5UV Femtofarad unidirectional fivefold ESD protection array Rev. 1 — 17 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad capacitance unidirectional ElectroStatic Discharge ESD protection diode array designed to protect up to five signal lines from the damage caused by ESD and

diode marking N9

Contextual Info: SO T6 66 PESD5V0F5UV Femtofarad unidirectional fivefold ESD protection array Rev. 1 — 17 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad capacitance unidirectional ElectroStatic Discharge ESD protection diode array designed to protect up to five signal lines from the damage caused by ESD and

MIXA151W1200EH

Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Contextual Info: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

G4EU

Abstract: ic MARKING QG E72873 DIODE T6 marking
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:

MIXA61H1200ED

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.

101W1200EH

Abstract: D434
Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.

Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 120 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.

MIXA40WB1200TED

Abstract: IXYS MIXA40WB1200TED mixa40wb1200 d14 ntc airconditioning inverter circuit DIODE T7 marking NTC 8
Contextual Info: MIXA40WB1200TED Converter - Brake - Inverter Module XPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 150 A IC25 = 28 A IC25 = 60 A IFSM = 320 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)