DIODE T85 Search Results

FP-T85-660-1-C-F

Contextual Info: FLEXPOINT Laser Modules for Operating Temperatures from -10°C to 85°C T85 Series The T85 series laser modules were specifically developed for higher operating temperatures. In addition to the incorporation of a special laser diode as well as a glass lens,

Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

T8514VB

Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

T8514

Abstract: T8514VB transistor tip 1050 FVOV6870 MIL-HDBK-263 81129
Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

Contextual Info: T8514VB www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

Contextual Info: T8514VB www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

t40hfl100s05

Abstract: E78996 t85hfl100s05 T70HFL20S02
Contextual Info: International loRjRectifier Part Number T40HFL10S02 T40HFL20S02 T40HFL40S02 T40HFL60S02 Power Modules Diode, Fast •F AV @ Vr r m (V) 100 200 400 600 T40HFL10S05 T40HFL20S05 T40HFL40S05 T40HFL60S05 T40HFL80S05 T40HFL100S05 100 200 400 600 800 1000 T40HFL10S10

232 GFP smd diode

Abstract: Diode SMD SJ 8C low noise amplifier amp 77 medical ultrasound guide smd type T3rd CLC425 CLC425A8B CLC425AIB CLC425AJE CLC425AJP
Contextual Info: Ultra Low Noise Wideband Op Amp SComlinear A National Semiconductor Company CLC425 APPLICATIONS: • instrumentation sense amplifiers • ultrasound pre-amps • magnetic tape & disk pre-amps • photo-diode transimpedance amplifiers • wide band active filters

Motorola ULN2003A

Abstract: mps 0940 MC1411 MC1412 MC1413 MC1413T MC1416 SN75476 SN75477 SN75478
Contextual Info: MC1411 ULNZOOTA MC1412 {ULNZOOZA MC1413 (ULN2003A MC1413T M~1416 (ULN2004A) . HIGH-VOLTAGE, DAR LINGTON The are seven NPN well suited a variety down to600 Darlington-connected for driving of industrial voltage problems and internal TTL, diode and or CMOS

IRKEL240-14S20

Abstract: T85HFL40S02 IRKEL71-02S02 IRKEL71-02S05 IRKEL71-04S02 IRKEL71-04S05 IRKEL71-06S02 T70HFL100S10 T70HFL10S10 T70HFL20S10
Contextual Info: INTERNATIONAL RECTIFIER EbE D • 4Ô55455 001073b 7 ■ International Iior IRectifier Power Modules, Diode, Fast Part V RRM ' f AV T C *FSM W 50Hz number (V) T70HFL10S10 T70HFL20S10 T70HFL40S10 T70HFL60S10 T70HFL80S10 T70HFL100S10 100 200 400 600 800 1000

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • b b S S ' m DD3QaflD 33T W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

mc1648

Abstract: symbol of varactor diode and equivalent circuit 1200 ohm RESISTOR 5011-10 MC1648 internal schematic MV2116 MV1401 70 mhz varactor diode
Contextual Info: M MOTOROLA MCI 648 VOLTAGE-CONTROLLED OSCILLATOR VOLTAGE-CONTROLLED OSCILLATOR The MCI 648 requires an external parallel tank circuit consisting of the inductor (L) and capacitor (C). FOR MAXIMUM PERFORMANCE QL S 100 AT FREQUENCY OF OPERATION. A varactor diode may be incorporated into the tank circuit to

new bright R288-2

Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Contextual Info: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz

diode t87

Contextual Info: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.

diode t85

Abstract: t85 diode FL40S02 1150I
Contextual Info: International IO R Rectifier Port Number V * RM V \>£j Fast Recovery Diodes I fAV@TC (A) (C) •fsm 50 Hi 60Hi (A) (A) Vfm (V) R0)C(D£) (K/W) »„ (nS) Fax on Demand Number Notes Case Outline Key Diode T70H FL100S05 1000 70 70 700 •HO 1.7? 0.53 5 0 0 (1 1 0 )

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

diode t87

Abstract: t85 diode DO-35 BLUE CATHODE t77 c.3 1SS245 SC-40 T-77 diode T-77 diode t85 ROHM 1SS245
Contextual Info: 40E ]> ROHM CO LTD 7 a 2 ñ clcicl OOObSIS b IRH tl -f Tf— K / D io d e s 1SS245 -F O Z -O l 1 S ilico n Epitaxial Planar H ig h-V o ltag e Sw itching Diode #-Jë\J"jÈ|3iI/Dimensions Unit : mm • W * 1 1) n l i B E T ' $ > & o 2) ¡ g i f H S T ' * « o

LNJ115W86RA

Abstract: MATSUSHITA PANASONIC LNJ 018B
Contextual Info: DEVELOPMENT SPECIFICATION 1 8 P/N : LN] 1 1 5W86RA Bi-color Greeri / Red Light Emitting Diode A P P L I C A T I O N Indicators M A Green (GaN) / Red(GaAlAs) li T E R I A I L N At t.ached A B S O L U T E M A X I M li M R A T I N G S C 0 N D 1 T I jg l P (G)

2N1100

Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s

2N1100 Power Transistor

Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s

Contextual Info: T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes T-Modules , 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly