DIODE T87 Search Results

T589N

Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Contextual Info: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]

Contextual Info: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

FVOV6870

Abstract: MIL-HDBK-263
Contextual Info: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm

FVOV6870

Abstract: MIL-HDBK-263 T8714VA
Contextual Info: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

Contextual Info: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength:  = 870 nm

Contextual Info: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength:  = 870 nm

Contextual Info: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

Contextual Info: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

Contextual Info: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

Contextual Info: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength:  = 870 nm

FVOV6870

Abstract: MIL-HDBK-263
Contextual Info: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm

Contextual Info: T8714VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

Contextual Info: T8714VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm

Contextual Info: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm

Contextual Info: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm

T1081N

Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Contextual Info: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N

thyristor T 514

Abstract: THYRISTOR t508n T508N T879N DIODE 409 1336 T1189N T1509N T1989N T358N T588N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl

T1189N

Abstract: T718N T1509N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VRRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl

EUPEC Thyristor

Abstract: T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106
Contextual Info: BACK NEXT HIGH POWER THYRISTORS AND DIODES Diode Thyristor 2 Features: 2 5 Features: 4 • Reverse Voltage up to 2800 Volts • Metal Ceramic Package • Reverse Voltage up to 4900 Volts • Metal Ceramic Package 1 Applications: • DC Motor Control for machine tools

135 D 4 e

Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

new bright R288-2

Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Contextual Info: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz

diode t87

Contextual Info: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.

diode t87

Abstract: t85 diode DO-35 BLUE CATHODE t77 c.3 1SS245 SC-40 T-77 diode T-77 diode t85 ROHM 1SS245
Contextual Info: 40E ]> ROHM CO LTD 7 a 2 ñ clcicl OOObSIS b IRH tl -f Tf— K / D io d e s 1SS245 -F O Z -O l 1 S ilico n Epitaxial Planar H ig h-V o ltag e Sw itching Diode #-Jë\J"jÈ|3iI/Dimensions Unit : mm • W * 1 1) n l i B E T ' $ > & o 2) ¡ g i f H S T ' * « o

PMB8753

Abstract: Infineon Specific HCI Commands bluetooth T8753 PMB 9600 LMPP Z/sdc 7600
Contextual Info: P rod uc t O v erv i ew T8753-XV10PO1-7600 No ve mb er 2005 PMB 8753 BlueMoon UniCellular BlueMoon Universal Platform N e v e r s t o p t h i n k i n g . Edition 2005-11-25 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany