DIODE TCW Search Results

Eupec BSM

Abstract: BSM50GP60 eupec
Contextual Info: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

Transistor GE 67

Contextual Info: eupec Technische Inform ation / Technical Inform ation H i— B S M 15G P 60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige W erte / Maximum rated values Diode Gleichrichter/ Diode Rectifier P eriodische Rückw. S pitzensperrspannung

BSM30GP60 INVERTER CIRCUIT

Abstract: BSM30GP60
Contextual Info: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier

Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT 0220G SG30TC 12M Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 30A 4.5 Feature ' Tj=175°C ' Full Molded 1Low Ir=40|jA 1Resistance for thermal run-away > Tj=175°C >37JLÆ-JL/ K » Ir=40|j A

Contextual Info: Schottky Barrier Diode Twin Diode m n n . SG40TC12M o u tlin e Package ! FT 0220G Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 40A 4.5 Feature > T j= 1 7 5 °C ' T j= 17 5°C >3 7 JL Æ -JL / K ' Full M o ld ed • Î Ë I r =60| j A 1 L o w Ir =60| j A

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: SCHOTTKY BARRIER DIODE 10A/30V FCQ10A03L FEA TU RES o Similar to TO-220AB Case o Fully Molded Isolation o Extremely Low Forward Voltage Drop oD ual Diodes—Cathode Common oL ow Power Loss, High Efficiency o High Surge Capability o Wire-bonded technology MAXIMUM RATINGS

CW laser diode

Abstract: LASER RANGE FINDER CW Laser L7650 a355
Contextual Info: HAM AM ATSU preliminary data 850nm C W Laser Diode L7650 • A p plicatio n s Range Finder Laser Beam Printer ■ A B S O L U T E MAXIMUM RATINGS Tc=25°C Characteristics Output Power Reverse Voltage Operating Temperature Storage Temperature Sym bols Po

a7045

Contextual Info: MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode a t E-C Lead Formed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1 “ Suffix) ABSOLUTE MAXIMUM RATINGS

06io1

Abstract: MCD132-16101 MCD72-12I08B MCD72-04IO8B MCD95-04IO8B MCD95-04 MCD95-12I08B 12io1 MCD95-16I08B MCD250-08IO1
Contextual Info: Thyristor / Diode Modules 'TAV = 27-320 A Type *TFIMS *18« A 45°C 10 ms A E 72 873 M MCD26-16IOBB • MCD26-14io8B MC026-12loBB • MCD26-06io8B • MCD26-04io8B MCD44-18lo8B MCD44-16io8B • MCD44-14Ì08B MCD44-12Ì08B MCD44-08IO8B • MCD44-06ÌO8B • MCD44-04io8B

Contextual Info: 3875081 G E SOLID STATE Ö1E Optoelectronic s p ec ific atio n s_ 19872 T - 4 I - S 7 H A RR IS S E M I C O N D SECTOR 37E 5 B 4 3 G 2 27 1 0 G 5 7 3 3 4 BHAS Photon Coupled Isolator MCS21, MCS2401 GaAs In frare d Em itting Diode & Light A ctivated SCR

2500U

Contextual Info: ramm MVIFW10P SOP Type Part No. MOL01 Device Voc (V) (A) Pd (mW) 1. 2. 3, 4 6 0± 1 0 2 eoo Diode G , 1000~ Resistance Value Vf (V) lo (A) Vf (V) If (A) 5 1 ~ 1.5 1 R i (O ) 680 R 2/ R 1 14.7 #Product Designation • When ordering, specify the type. • Check each code against the tables shown below.

Contextual Info: TCW TriBiner Series: Triple Wavelength Instrument Laser 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com • Wavelengths: 650nm, 850nm, 1310nm, and 1550nm • High Peak Optical Power • Includes 650nm Red Laser for Fault Finding

d2p03

Contextual Info: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MM DF2P03HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors M otorola Preferred Device MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High Cell D ensity H D TM O S process.

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

MT3S106

Abstract: 1SS417CT TAH8 TAH8N401K 2SA2154CT 1SS361CT 1SS387CT TPD4113AK TPD4113K sine wave Control IC
Contextual Info: C O N T E N T S New Products TOSHIBA SEMICONDUCTOR BULLETIN EYE FEBRUARY 2005 2 VOLUME 151 Single-chip Inverter ICs .2 2-bit Dual Supply Unidirectional Level Shifter ICs .2 Lead-Frame-Chip-Scale-Package .3

Contextual Info: SK45GB063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] MWW T YO Z C- R [W S$ NW Z XWW Z ^ PW T CU R XPO S$ XW b- C- R PO S$ Od Z C- R [W S$ N[ Z E$¥] R P : E$0%& *'-) T$$ R NWW T_ TFL ` PW T_

Contextual Info: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip PIN CONFIGURATIONS TOP VIEW VCC2 1 8 VCC1 X1 2 7 SCLK X2 3 6 I/O GND 4 5 CE DS1302 Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100

Contextual Info: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip FEATURES PIN CONFIGURATIONS VCC2 1 X1 2 X2 3 GND 4 DS1302 TOP VIEW 8 VCC1 7 SCLK 6 I/O 5 CE DIP 300 mils VCC2 1 X1 2 X2 3 GND 4 DS1302 Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the

ds1302 circuit

Abstract: DS1202 DS1302 DS1302N DS1302S DS1302SN DS1302Z DS1302ZN *1302ZN ds1302 circuit real time clock Register definition
Contextual Info: DS1302 Trickle-Charge Timekeeping Chip www.maxim-ic.com FEATURES PIN CONFIGURATIONS Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 31 x 8 Battery-Backed General-Purpose RAM

Contextual Info: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip ORDERING INFORMATION PART DS1302+ DS1302N+ DS1302S+ DS1302SN+ DS1302Z+ DS1302ZN+ TEMP RANGE 0°C to +70°C Functional Diagrams -40°C to +85°C 0°C to +70°C -40°C to +85°C 0°C to +70°C -40°C to +85°C

Super Capacitor Charger

Abstract: 68HC05C4 68HC11A8 DS1306 DS1306E DS1306EN DS1306N
Contextual Info: DS1306 Serial Alarm Real-Time Clock www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT Real-time clock RTC counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap-year compensation valid up to 2100

68HC05C4

Abstract: 68HC11A8 DS1306 DS1306E DS1306EN DS1306N
Contextual Info: DS1306 Serial Alarm Real-Time Clock www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT Real-time clock RTC counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap-year compensation valid up to 2100

30 pin SIP dram memory

Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS2219 Nonvolatile DRAM Stik 1M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent