DIODE UM 031 Search Results

1XGH10N100U1

Contextual Info: Low VCE{sat IGBT with Diode High speed IGBT with Diode IXGH10N100U1 IXGH10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30

Contextual Info: □ IXYS IXSH10N120AU1 PR E LIM IN A R Y D A T A S H E E T ^C25 IGBT with Diode V CES V CE sat "S" Series - Improved SCSOA Capability Sym bol T est C o n d itio n s V CES Tj = 2 5 °C to 150°C V CGR Tj = 2 5 °C to 150°C; f^E= 1 M£i 1200 V 4.0 V M axim um R atings

Contextual Info: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings

IXGH9090

Abstract: IXYS SP
Contextual Info: □ IX Y S IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lf i 48 A 600 V 2.7 V 400 ns TO-247AD M axim um R atings S ym b o l T e st C onditions VcES T j = 2 5 'C to 150°C 600 V ^C G R T,J = 2 5 'C to 150” C; Rb t = 1 MQ 600 V V GES Continuous

a39 zener diode

Contextual Info: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high

A84 diode

Abstract: ERD31 401-140
Contextual Info: ERD31 i.5A : Outline Drawings FAST RECOVERY DIODE • 4 $ f t : Features ■ S t]n : Marking Large cu rren t • /VWtOfrM IfStf'»*.' High voltage by mesa design. ttE O fc :» • Mismtk t l'J — High reliability 031-04 oi □ V hM B #K 4 i ±W : *«J ■T«J

ERD31

Abstract: A84 diode
Contextual Info: ERD31 i.5A : Outline Drawings FAST RECOVERY DIODE • 4 $ f t : Features ■ S t]n : Marking Large cu rren t • /VWtOfrM IfStf'»*.' High voltage by mesa design. ttE O fc :» • Mismtk t l'J — High reliability 031-04 oi □ V hM B #K 4 i ±W : *«J ■T«J

ERD31

Abstract: A84 diode
Contextual Info: E R D 3 1 i . 5 A : Outline Drawings FAST RECOVERY DIODE • 4 $ f t : Features ■ S t]n : Marking Large cu rren t • /VWtOfrM IfStf'»*.' High voltage by mesa design. ttE O fc :» • M is m tk tl'J— High reliability 031-04 oi □ V h M B # K 4 i ±W : * « J ■T«J

Contextual Info: SbE D • 711002b DDM1E5Û T^fl IPH IN DEVELOPMENT DATA BYR34 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. PHILIPS INTERNATIONAL ShE D T -03-17 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

BYU28

Abstract: ml723 BYU28 200 OD412 m1722 M3066 BYQ28 diode BYq28 1CR101 M1720
Contextual Info: SbE D • 711002b 00412DD 171 ■ PHIN BYQ28 SERIES T -03-17 •HILIPS i n t e r n a t i o n a l ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. T hey are intended fo r

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 4 4 7 5 6 4 ü ü ü T b l 2 ITS » H P A Hermetic Schottky Diodes for Mixers and Detectors 1-18 GHz Technical Data HSCH-6000 Series Features • Low P a ra s itic H erm etic P ackage -High Frequency Performance -M eets Performance

5082-0253

Abstract: step recovery diodes 5082-0885 5082-0830 5082-0320
Contextual Info: HEWLETT-PACKARDn CMPNTS 2GE D B 4M475Ö4 DÜQSÔOS E3 5082-0132 5082-0241 5082-0253 5082-0300 5082-0310 5082-0320 5082-0335 5082-0800 CERAMIC PACKAGED STEP RECOVERY DIODES 1 H EW LETT W !¿J P A C K A R D t 5082-0805 5082-0810 5082-0820 5082-0821 5082-0830

445 nm DLP

Abstract: NU501 BYV74F M1982 BYV 22 diode
Contextual Info: D E VE LO PM EN T DATA BYV74F SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER P H I L I P S / D I S C R E T E 5SE D • bbS3T31 0G25b41 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES

Contextual Info: OPTEK P roduct B ulletin OPR2100 A u g u st 1996 Six Element SMD Photodiode Array Type OPR2100 - .031 0.8 —^ ( - .130(3.3) r | - .237(6.0) .071(1.8) .213(5.4) .362 x .236 GROUND PLANE* (9.2 x 6.0) r - DIA .0315(0.80) r W ~ I ON SUBSTRATE .354(9.0) .409(10.4)

Photodiode-Array

Abstract: OPR2100 photodiode array encoder
Contextual Info: OPTEK P roduct Bulletin O PR2100 A u gu st 1996 Six Element SMD Photodiode Array Type QPR2100 .031 0 .8 —^ ( - r .3 6 2 — . 1 3 0 ( 3 .3 ) x .2 3 6 GROUND PLANE* ( 9 .2 x 6 .0 ) .2 3 7 ( 6 .0 ) r - DIA .0 3 1 5 ( 0 .8 0 ) ON SUBSTRATE . 0 7 1 ( 1 .8 )

ST1009

Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.

Contextual Info: P D -9 .1 2 2 8 International jgg] Rectifier_ H EXFET P ow er M O S FE T • • • • • • • IRFDC20 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements

B480-EH

Abstract: LY-B4
Contextual Info: SHEMENS LS B480 YELLOW LY B480 GREEN LG B480 SUPER-RED Rectangular LED Lamp Package Dimensions in Inches mm .024(0.6) .016 (0.4) i4) 1 .100(2.54) Y .071 ± J- .047 j .197 (5.0) .087 (4.8) C a th o d e / (1 8 ) (12) .031 (0.8) —, .020 (0.5) I T ^ Not Sharp-edged

EM 4093 001

Abstract: EM 4093 sr 160 DIODE
Contextual Info: SIEMENS SFH 409 INFRARED EMITTER Package Dimensions in Inches mm 2 0 4 (5 2 ) .0 2 4 ( 6) .0 1 6 (4 ) 028 ( 0 1 6 (4 ) 031 <•«) 0 1 6 (4 ) 100 (2 S4) 071 (1 8 ) 0 4 7 (1 2) 1 14 0(29) 1 0 6 1 (2 7 ) FEATURES Maximum Ratings • Radiant Intensity Selections

ML5203

Abstract: ML5103 ML2803 ML6302 sot-23 marking code pe AN-994 marking code pe sot-23 MOSFET IRL SOT-23 marking code BS marking BS SOT-23
Contextual Info: IRLML6402PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: H P 5A d va n ced F M PO W ER M l T e c h n o lo g y APT30GT60BRD 600v 55A Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers

1RFZ46N

Abstract: IC 282 SD28A 1rfz46 IRFZ46N IQR9246 IRF1010 marking rur. diode BBV marking MOSFET IRFZ46N
Contextual Info: International rai Rectifier PD - 9.1277B IRFZ46N PRELIMINARY HEXFET Power M O SFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V R o s o n = 0 . 0 2 0 Q lD = 46A Description

Contextual Info: LD274 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm Chip Position Surface not flat .031 (0.8 .016(0.4 _L .100(2.54) ♦ .071 (1.0) .047 (1.2) ” T I t i ~P • \Cathode~ 1.140(29) 1,061 (27) .224 (5.7) .200 (5.1) .200 (5.1 .189 (4.8 .307 (7.8)

BPX92

Abstract: Bpx 95 photodetector 850 nm aa3b
Contextual Info: SIEMENS BPX92 SILICO N PHOTODIODE Package D im ensions in Inches mm Chip position FEATURES * Silicon Planar Photodiode * Transparent Plastic C a se Photosensitive area 051 x 031 (1 3 x 8) ' * 0.2* (S.08 mm) Lead Sp ac in g 0 1 6 (4 ) 006 ( 2) • Low D ark Current, 1 n A