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    DIODE VISHAY MP Search Results

    DIODE VISHAY MP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE VISHAY MP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Vishay Telefunken Eye Safety of Diode Emitters Document Number 82500 05.01 www.vishay.com 1 Vishay Telefunken Eye Safety of Diode Emitters IEC, the International Electrotechnical Committee and CENELEC, the European Committee for Electrotechnical Standardization officially recognized


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    PDF 83/189/EEC)

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


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    PDF CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11

    IEC60601-2-22

    Abstract: IEC60825-1 IEC-60825-1 IEC-60825 IEC608251
    Text: VISHAY Vishay Semiconductors Eye Safety of Diode Emitters The International Electrotechnical Committee IEC and the European Committee for Electrotechnical Standardization (CENELEC, officially recognized as the European Standards Organization in its field by


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    PDF 83/189/EEC) gov/cdrh/comp/guidance/1346 02-Jul-03 IEC60601-2-22 IEC60825-1 IEC-60825-1 IEC-60825 IEC608251

    IEC60825-1

    Abstract: IEC60825 IEC60601-2-22 radiological Infrared Emitting Diode EN60825-1
    Text: Eye Safety of Diode Emitters Vishay Semiconductors Eye Safety of Diode Emitters Since 1993, the International Electrotechnical Committee IEC and the European Committee for Electrotechnical Standardization (CENELEC, officially recognized as the European Standards Organization


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    PDF 83/189/EEC) IEC60825-1, IEC60601-2-22; gov/cdrh/comp/guidance/1346 25-Aug-06 IEC60825-1 IEC60825 IEC60601-2-22 radiological Infrared Emitting Diode EN60825-1

    IEC60825-1

    Abstract: IEC60601-2-22 IEC-60825-1 IEC60825-1 LED IEC-60825 EN60825-1
    Text: Eye Safety of Diode Emitters Vishay Semiconductors Eye Safety of Diode Emitters Since 1993, the International Electrotechnical Committee IEC and the European Committee for Electrotechnical Standardization (CENELEC, officially recognized as the European Standards Organization


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    PDF 83/189/EEC) gov/cdrh/comp/guidance/1346 20-Sep-06 IEC60825-1 IEC60601-2-22 IEC-60825-1 IEC60825-1 LED IEC-60825 EN60825-1

    VESD05C-FC1

    Abstract: No abstract text available
    Text: VESD05C-FC1 VISHAY Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


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    PDF VESD05C-FC1 D-74025 14-Jul-04 VESD05C-FC1

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Semiconductors, Diodes / January 2015 Author: Roland Reuschle Tel: +49 7131 67-2634 E-mail: roland.reuschle@vishay.com New BiAs Single-Line ESD Protection Diode Saves Board Space for Portable Electronics Product Benefits: •  


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    PDF LLP1006-2L VESD15A1-HD1-G4-08 VESD15A1-HD1)

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Semiconductors, Diodes / March 2015 Author: Roland Reuschle Tel: +49 7131 67-2634 E-mail: roland.reuschle@vishay.com New BiSy Single-Line, Ultra-Low-Capacitance ESD Protection Diode Saves Board Space in Portable Electronics Product Benefits:


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    PDF CLP0603 VBUS05B1-SD0 VBUS05B1-SD0)

    GMS05C

    Abstract: GMS15
    Text: GMS05C thru GMS24C Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TVS Diode Array Pin Configuration SOT-23-6L Top View SOT-23-6L 0.120 (3.05) 0.110 (2.80) 6 5 4 1 2 3 Top View 0.118 (3.00) 0.102 (2.60) 0.070 (1.75) 0.059 (1.50)


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    PDF GMS05C GMS24C OT-23-6L OT-23-6L GMS05C: GMS12C: GMS15C: GMS24C: GMS15

    Untitled

    Abstract: No abstract text available
    Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


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    PDF VESD05C-FC1 11-Mar-11

    VESD05C-FC1

    Abstract: No abstract text available
    Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


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    PDF VESD05C-FC1 08-Apr-05 VESD05C-FC1

    Untitled

    Abstract: No abstract text available
    Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


    Original
    PDF VESD05C-FC1 D-74025 02-May-05

    Untitled

    Abstract: No abstract text available
    Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


    Original
    PDF VESD05C-FC1 D-74025 15-Sep-05

    Untitled

    Abstract: No abstract text available
    Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


    Original
    PDF VESD05C-FC1 D-74025 18-May-05

    e1 marking

    Abstract: No abstract text available
    Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for


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    PDF VESD05C-FC1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e1 marking

    SC-70-6

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


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    PDF SiA810DJ SC-70 SC-70-6 08-Apr-05

    SC-70-6

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


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    PDF SiA810DJ SC-70 SC-70-6 18-Jul-08

    SC-70-6

    Abstract: 74957
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


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    PDF SiA810DJ SC-70 SC-70-6 11-Mar-11 74957

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original
    PDF SiA810DJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


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    PDF SiA810DJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


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    PDF SiA810DJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SC-70-6

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) rDS(on) (Ω) 20 • LITTLE FOOT Plus Schottky Power MOSFET


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    PDF SiA810DJ SC-70 SC-70-6 08-Apr-05

    smps 800W

    Abstract: No abstract text available
    Text: New 45 -V Fa mily Ta rgets High -Te mpe r ature A pplic ations FEATURES • • • • • Built on submicron trench technology Very low typical forward voltage drop of < 0.50 V at rated current Extremely low typical reverse leakage: 40 % lower than planar technology


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    PDF VMN-PT0136-0812 smps 800W

    Untitled

    Abstract: No abstract text available
    Text: VISHAY T Vishay Telefunken Eye Safety of Diode Emitters IEC and CENELEC, the International Electrotech­ nical Committee and the European Committee for Electrotechnical Standardization have included Diode Emitters such as IREDs and LEDs into the laser safety standard. This is due to the techno­


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